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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Super high density cell N channel MOSFET BLUE ROCKET BRCS80N03DP in TO 252
China Super high density cell N channel MOSFET BLUE ROCKET BRCS80N03DP in TO 252

  1. China Super high density cell N channel MOSFET BLUE ROCKET BRCS80N03DP in TO 252

Super high density cell N channel MOSFET BLUE ROCKET BRCS80N03DP in TO 252

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Drain to Source Voltage 30V
Current - Continuous Drain(Id) 80A
Operating Temperature - -55℃~+150℃
RDS(on) 7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) 1.7V
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) -
Number 1 N-channel
Input Capacitance(Ciss) -
Pd - Power Dissipation 90W
Gate Charge(Qg) -
Description N-Channel 30V 80A 90W Surface Mount TO-252
Mfr. Part # BRCS80N03DP
Package TO-252
Model Number BRCS80N03DP

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  1. Product Details
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Product Specification

Drain to Source Voltage 30V Current - Continuous Drain(Id) 80A
Operating Temperature - -55℃~+150℃ RDS(on) 7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) 1.7V Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) - Number 1 N-channel
Input Capacitance(Ciss) - Pd - Power Dissipation 90W
Gate Charge(Qg) - Description N-Channel 30V 80A 90W Surface Mount TO-252
Mfr. Part # BRCS80N03DP Package TO-252
Model Number BRCS80N03DP

Product Overview

The BRCS80N03DP is an N-channel MOSFET in a TO-252 plastic package, featuring a super high-density cell design for low RDS(on). This rugged and reliable surface mount device is halogen-free and well-suited for high efficiency switching DC/DC converters and switch mode power supplies. It offers a low on-resistance and is designed for demanding power applications.

Product Attributes

  • Brand: FS (implied by URL http://www.fsbrec.com)
  • Package Type: TO-252 Plastic Package
  • Halogen-Free: Yes
  • Cell Design: Super high dense

Technical Specifications

Parameter Symbol Rating Unit Test Conditions Min Typ Max
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS 30 V
Drain Current ID(Tc=25) 80 A
Drain Current - Pulsed IDM 300 A
Gate-Source Voltage VGSS ±20 V
Single Pulsed Avalanche Energy EAS 211 mJ
Avalanche Current IAS 23 A
Power Dissipation PD(Tc=25) 90 W
Operating and Storage Temperature Range TJ,Tstg -55 to 150
Junction-to-Ambient Thermal Resistance RθJA 18 /W t≤10s
Junction-to-Ambient Thermal Resistance RθJA 45 /W Steady-State
Junction-to-Case Thermal Resistance RθJC 1.38 /W Steady-State
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250μA
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V
Gate-Body Leakage Current IGSS ±0.1 μA VGS=±20V, VDS=0V
Gate Threshold Voltage VGS(th) V VDS=VGS, ID=250μA 1.0 1.7 2.5
Static Drain-Source On-Resistance RDS(on) mΩ VGS=10V, ID=70A 4.8 6.5
Static Drain-Source On-Resistance RDS(on) mΩ VGS=4.5V, ID=35A 7.0 9
Drain-Source Diode Forward Voltage VSD V VGS=0V, IS=10A 1.2
Input Capacitance Ciss 2090 pF VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance Coss 790 pF VGS=0V, VDS=0V, f=1MHz
Reverse Transfer Capacitance Crss 634 pF VGS=0V, VDS=0V, f=1MHz
Gate Resistance Rg 1.9 Ω VGS=0V, VDS=0V, f=1MHz
Total Gate Charge Qg(10V) nC VDD=10V, VDS=15V, ID=20A 30 42
Total Gate Charge Qg(4.5V) nC VDD=10V, VDS=15V, ID=20A 14 20
Gate Source Charge Qgs nC VDD=10V, VDS=15V, ID=20A 5.1
Gate Drain Charge Qgd nC VDD=10V, VDS=15V, ID=20A 6.3
Turn-On Delay Time td(on) 8 ns VDD=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
Turn-On Rise Time tr 4 ns VDD=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
Turn-Off Delay Time td(off) 29 ns VDD=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
Turn-Off Fall Time tf 5.5 ns VDD=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
Body Diode Reverse Recovery Time trr 16.5 ns IF=20A, dl/dt=500A/μs
Body Diode Reverse Recovery Charge Qrr 34.2 nC IF=20A, dl/dt=500A/μs

Packaging

Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (Reel) Dimension (Inner Box) Dimension (Outer Box)
TO-252 (Reel) 2,500 2 5,000 5 25,000 13"×16" 360×360×50 385×257×392
TO-251/252 (Tube) 75 48 3,600 5 18,000 526×20.5×5.25 555×164×50 575×290×180

Soldering Profile

Temperature Profile for IR Reflow Soldering (Pb-Free):

  • Preheating: 150~180, Time: 60~90 seconds.
  • Peak Temperature: 245±5, Duration: 5±0.5 seconds.
  • Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions:

  • Temperature: 260±5
  • Time: 10±1 seconds.

Marking Instructions

Marking: BR **** 80N03

  • BR: Company Code
  • 80N03: Product Type Code
  • ****: Lot No. Code (changes with Lot No.)

Pinning

  • PIN 1: G
  • PIN 2: D
  • PIN 3: S
  • PIN 4: D

Equivalent Circuit

(Diagram not provided in text, refer to datasheet for visual representation)


2410121234_BLUE-ROCKET-BRCS80N03DP_C914064.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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