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Hefei Purple Horn E-Commerce Co., Ltd.

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China N Channel MOSFET BORN BMI03N820 Designed for Power Factor Correction and
China N Channel MOSFET BORN BMI03N820 Designed for Power Factor Correction and

  1. China N Channel MOSFET BORN BMI03N820 Designed for Power Factor Correction and

N Channel MOSFET BORN BMI03N820 Designed for Power Factor Correction and

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Drain to Source Voltage 30V
Configuration -
Current - Continuous Drain(Id) 45A
RDS(on) 8.2mΩ@10V,15A
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 1.8V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) -
Number 1 N-channel
Pd - Power Dissipation 45W
Input Capacitance(Ciss) 860pF@15V
Gate Charge(Qg) 18.8nC@10V
Description N-Channel 30V 45A 45W Surface Mount TO-252-2
Mfr. Part # BMI03N820
Package TO-252-2
Model Number BMI03N820

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Product Specification

Drain to Source Voltage 30V Configuration -
Current - Continuous Drain(Id) 45A RDS(on) 8.2mΩ@10V,15A
Operating Temperature - -55℃~+150℃ Gate Threshold Voltage (Vgs(th)) 1.8V@250uA
Type N-Channel Reverse Transfer Capacitance (Crss@Vds) -
Number 1 N-channel Pd - Power Dissipation 45W
Input Capacitance(Ciss) 860pF@15V Gate Charge(Qg) 18.8nC@10V
Description N-Channel 30V 45A 45W Surface Mount TO-252-2 Mfr. Part # BMI03N820
Package TO-252-2 Model Number BMI03N820

Product Overview

The BMI03N820 is an N-Channel MOSFET utilizing advanced trench technology and design to achieve excellent RDS(on) with low gate charge. This MOSFET is suitable for a wide range of applications, including power factor correction (PFC), switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and LED lighting power.

Product Attributes

  • Brand: BN (implied from product name BMI03N820)
  • Product Type: N-Channel MOSFET
  • Technology: Advanced Trench Technology
  • Package: TO-252-2L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
General Description
Drain-Source Voltage VDS 30 V
Drain Current ID TC=25C 45 A
Drain Current ID TC=100C 29 A
Drain Current-Pulse IDM (1) 180 A
Power Dissipation PD TC=25C 45 W
Derate above 25C 0.35 W/C
Single Pulsed Avalanche Energy EAS (2) 90 mJ
Operation Junction Temperature Range TJ -55 +150 C
Storage Temperature Range Tstg -55 +150 C
Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds TL 300 C
Thermal Resistance from Junction to Ambient RJA 62.5 C/W
Thermal Resistance From Junction to Case RJC 2.0 C/W
Electrical Characteristics (TA=25C unless otherwise noted)
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID=250uA 30 V
Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS=0V 1 uA
Gate-Body Leakage Current IGSS VGS = 20V, VDS=0V 100 nA
Gate Threshold Voltage VGS(TH) VGS = VDS, ID=250uA 1.0 1.5 1.8 V
Static Drain-source On Resistance RDS(ON) VGS=10V, ID=15A 8.2 11.0 m
Static Drain-source On Resistance RDS(ON) VGS=4.5V, ID=10A 14.5 20.0 m
Input Capacitance Ciss VDS =15V, VGS =0V, f = 1MHz 860 pF
Output Capacitance Coss 145 pF
Reverse Transfer Capacitance Crss 110 pF
Gate Resistance Rg VGS=0V, f=1MHz 1 3 10
Turn-on Delay time Td(on) VDD=20V, VGS=10V, RG =6, ID =15A 6.2 ns
Turn-on Rise time Tr 31.5 ns
Turn-Off Delay Time Td(off) 38.6 ns
Turn-Off Fall time Tf 13.5 ns
Gate to Drain Charge Qg VDS=15V, VGS=10V, ID=15A 18.8 nC
Gate to Source Charge Qgs 6.9 nC
Gate to Drain Charge Qgd 4.3 nC
Diode Forward Voltage VSD VGS=0V,IS=15A 0.88 1.2 V
Continuous Source Current IS Integral Reverse P-N Junction Diode in the MOSFET 45 A
Pulsed Sourse Current ISM 180 A
Reverse Recovery Time Trr IF=15A, dIF/dt=100A/s 48 ns
Reverse Recovery Charge Qrr 52 nC

Notes:

  • (1) Pulse width limited by maximum junction temperature.
  • (2) L=0.5mH, VDD=15V, VG=10V, RG=25, starting TJ=25C.
  • (3) Pulse Test: Pulse Width 300s, Duty cycle 2%.
  • (4) Essentially independent of operating temperature.

Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.


2411191600_BORN-BMI03N820_C42387581.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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