| Drain to Source Voltage | 30V |
| Configuration | - |
| Current - Continuous Drain(Id) | 45A |
| RDS(on) | 8.2mΩ@10V,15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel |
| Pd - Power Dissipation | 45W |
| Input Capacitance(Ciss) | 860pF@15V |
| Gate Charge(Qg) | 18.8nC@10V |
| Description | N-Channel 30V 45A 45W Surface Mount TO-252-2 |
| Mfr. Part # | BMI03N820 |
| Package | TO-252-2 |
| Model Number | BMI03N820 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 30V | Configuration | - |
| Current - Continuous Drain(Id) | 45A | RDS(on) | 8.2mΩ@10V,15A |
| Operating Temperature - | -55℃~+150℃ | Gate Threshold Voltage (Vgs(th)) | 1.8V@250uA |
| Type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel | Pd - Power Dissipation | 45W |
| Input Capacitance(Ciss) | 860pF@15V | Gate Charge(Qg) | 18.8nC@10V |
| Description | N-Channel 30V 45A 45W Surface Mount TO-252-2 | Mfr. Part # | BMI03N820 |
| Package | TO-252-2 | Model Number | BMI03N820 |
The BMI03N820 is an N-Channel MOSFET utilizing advanced trench technology and design to achieve excellent RDS(on) with low gate charge. This MOSFET is suitable for a wide range of applications, including power factor correction (PFC), switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and LED lighting power.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| General Description | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Drain Current | ID | TC=25C | 45 | A | ||
| Drain Current | ID | TC=100C | 29 | A | ||
| Drain Current-Pulse | IDM | (1) | 180 | A | ||
| Power Dissipation | PD | TC=25C | 45 | W | ||
| Derate above 25C | 0.35 | W/C | ||||
| Single Pulsed Avalanche Energy | EAS | (2) | 90 | mJ | ||
| Operation Junction Temperature Range | TJ | -55 | +150 | C | ||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds | TL | 300 | C | |||
| Thermal Resistance from Junction to Ambient | RJA | 62.5 | C/W | |||
| Thermal Resistance From Junction to Case | RJC | 2.0 | C/W | |||
| Electrical Characteristics (TA=25C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 30V, VGS=0V | 1 | uA | ||
| Gate-Body Leakage Current | IGSS | VGS = 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID=250uA | 1.0 | 1.5 | 1.8 | V |
| Static Drain-source On Resistance | RDS(ON) | VGS=10V, ID=15A | 8.2 | 11.0 | m | |
| Static Drain-source On Resistance | RDS(ON) | VGS=4.5V, ID=10A | 14.5 | 20.0 | m | |
| Input Capacitance | Ciss | VDS =15V, VGS =0V, f = 1MHz | 860 | pF | ||
| Output Capacitance | Coss | 145 | pF | |||
| Reverse Transfer Capacitance | Crss | 110 | pF | |||
| Gate Resistance | Rg | VGS=0V, f=1MHz | 1 | 3 | 10 | |
| Turn-on Delay time | Td(on) | VDD=20V, VGS=10V, RG =6, ID =15A | 6.2 | ns | ||
| Turn-on Rise time | Tr | 31.5 | ns | |||
| Turn-Off Delay Time | Td(off) | 38.6 | ns | |||
| Turn-Off Fall time | Tf | 13.5 | ns | |||
| Gate to Drain Charge | Qg | VDS=15V, VGS=10V, ID=15A | 18.8 | nC | ||
| Gate to Source Charge | Qgs | 6.9 | nC | |||
| Gate to Drain Charge | Qgd | 4.3 | nC | |||
| Diode Forward Voltage | VSD | VGS=0V,IS=15A | 0.88 | 1.2 | V | |
| Continuous Source Current | IS | Integral Reverse P-N Junction Diode in the MOSFET | 45 | A | ||
| Pulsed Sourse Current | ISM | 180 | A | |||
| Reverse Recovery Time | Trr | IF=15A, dIF/dt=100A/s | 48 | ns | ||
| Reverse Recovery Charge | Qrr | 52 | nC | |||
Notes:
Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!