| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃@(Tj) |
| RDS(on) | 12mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF@15V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.5nF@15V |
| Pd - Power Dissipation | 1.7W |
| Gate Charge(Qg) | 27.2nC@10V |
| Description | N-Channel 40V 10A 1.7W Surface Mount SOP-8 |
| Mfr. Part # | BRCS4484SC |
| Package | SOP-8 |
| Model Number | BRCS4484SC |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 40V | Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃@(Tj) | RDS(on) | 12mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | Reverse Transfer Capacitance (Crss@Vds) | 135pF@15V |
| Number | 1 N-channel | Input Capacitance(Ciss) | 1.5nF@15V |
| Pd - Power Dissipation | 1.7W | Gate Charge(Qg) | 27.2nC@10V |
| Description | N-Channel 40V 10A 1.7W Surface Mount SOP-8 | Mfr. Part # | BRCS4484SC |
| Package | SOP-8 | Model Number | BRCS4484SC |
The BRCS4484SC is an N-Channel Enhancement Mode Field Effect Transistor designed for a wide range of power conversion applications. It utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge. This product is halogen-free and comes in a SOP-8 plastic package.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current –Continuous (TA=25) | ID | 13.5 | A | |||
| Drain Current –Continuous (TA=70) | ID | 10.8 | A | |||
| Pulsed Drain Current | IDM | 120 | A | |||
| Avalanche Current | IAR | G | 23 | A | ||
| Repetitive avalanche energy (L=0.3mH) | EAR | G | 79 | mJ | ||
| Power Dissipation for Single Operation (TA=25) | PD | A | 3.1 | W | ||
| Power Dissipation for Single Operation (TA=70) | PD | A | 1.7 | W | ||
| Thermal Resistance, Junction-to-Ambient (t≤10S) | RθJA | A | 40 | °C/W | ||
| Thermal Resistance, Junction-to-Ambient (Steady State) | RθJA | A | 75 | °C/W | ||
| Thermal Resistance, Junction-to Lead (Steady State) | RθJL | A | 24 | °C/W | ||
| Operating and Junction Temperature Range | Tj Tstg | -55 | 150 | °C | ||
| Electrical Characteristics (Ta=25) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | 1.0 | μA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V, TJ=55°C | 5.0 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250μA | 1.0 | 1.4 | 2.0 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=10A | 8.2 | 10 | mΩ | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=10A, TJ=125°C | 12.5 | mΩ | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=8.0A | 12 | 15 | mΩ | |
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | 0.72 | 1.0 | V | |
| Forward Transconductance | gFS | VDS=5V, ID=5A | 10 | S | ||
| Electrical Characteristics (Ta=25) | ||||||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1.0MHz | 1500 | 1950 | pF | |
| Output Capacitance | Coss | VDS=15V, VGS=0V, f=1.0MHz | 215 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1.0MHz | 135 | pF | ||
| Total Gate Charge (10V) | Qg | VDS=20V, ID=10A, VGS=10V | 27.2 | 37 | nC | |
| Total Gate Charge (4.5V) | Qg | VDS=20V, ID=8.0A, VGS=4.5V | 13.6 | 18 | nC | |
| Gate-Source Charge | Qgs | VDS=20V, ID=10A, VGS=10V | 4.5 | nC | ||
| Gate-Drain Charge | Qgd | VDS=20V, ID=10A, VGS=10V | 6.4 | nC | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 2.0 | 5.0 | Ω | |
| Turn-On Delay Time | td(on) | VDS=20V, RL=2Ω, VGS=10V, RGEN=3Ω | 6.4 | ns | ||
| Turn-On Rise Time | tr | VDS=20V, RL=2Ω, VGS=10V, RGEN=3Ω | 17.2 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=20V, RL=2Ω, VGS=10V, RGEN=3Ω | 29.6 | ns | ||
| Turn-Off Fall Time | tf | VDS=20V, RL=2Ω, VGS=10V, RGEN=3Ω | 16.8 | ns | ||
| Continuous Drain-Source Diode Forward Current | IS | 2.5 | A | |||
| Body Diode Reverse Recovery Time | trr | IF=10A, dI/dt=100A/μs | 30 | 40 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=10A, dI/dt=100A/μs | 19 | nC | ||
| Pin Configuration | ||||||
| PIN 1, 2, 3 | S | Source | ||||
| PIN 4 | G | Gate | ||||
| PIN 5, 6, 7, 8 | D | Drain | ||||
| Marking Instructions | ||||||
| Company Code | BR | |||||
| Product Type | 4484 | |||||
| Lot No. Code | **** | (code change with Lot No.) | ||||
| Packaging Specifications | ||||||
| Package Type | SOP/ESOP-8 | Units/Reel | 4,000 | Reels/Inner Box | 2 | |
| Units/Inner Box | 8,000 | Inner Boxes/Outer Box | 6 | Units/Outer Box | 48,000 | |
| Reel Dimension | 13”×12 | Inner Box Dimension | 360×360×50 | Outer Box Dimension | 380×335×366 | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!