Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 55A |
| RDS(on) | 65mΩ@23.5V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V@1mA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF@100V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.99nF@100V |
| Pd - Power Dissipation | 500W |
| Gate Charge(Qg) | 73nC |
| Description | N-Channel 650V 55A 500W Surface Mount TOLL |
| Mfr. Part # | BMT65N065UC1 |
| Package | TOLL |
| Model Number | BMT65N065UC1 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 55A |
| RDS(on) | 65mΩ@23.5V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V@1mA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF@100V | Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.99nF@100V | Pd - Power Dissipation | 500W |
| Gate Charge(Qg) | 73nC | Description | N-Channel 650V 55A 500W Surface Mount TOLL |
| Mfr. Part # | BMT65N065UC1 | Package | TOLL |
| Model Number | BMT65N065UC1 |
The Bestirpower BMT65N065UC1 is an N-Channel Power MOSFET designed with advanced super junction technology, offering very low on-resistance and gate charge for high efficiency. Its optimized charge coupling technology and user-friendly design contribute to low EMI and reduced switching losses. This MOSFET is ideal for applications such as PC power supplies, server power supplies, telecommunications, solar inverters, and automotive super chargers.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| BVDSS | Drain to Source Voltage1) | 650 | V | |||
| VGSS | Gate to Source Voltage | ±30 | V | |||
| ID | Drain Current2) Continuous (TC = 25) | 55 | A | |||
| ID | Drain Current2) Continuous (TC = 125) | A | ||||
| IDM | Drain Current Pulsed (TC = 25) | 165 | A | |||
| EAS | Single Pulsed Avalanche Energy3) | 1000 | mJ | |||
| IAR | Avalanche Current | 6 | A | |||
| dv/dt | MOSFET dv/dt | 50 | V/ns | |||
| Peak Diode Recovery dv/dt4) | 50 | |||||
| Ptot | Power Dissipation (TC = 25) | 500 | W | |||
| dif/dt | Maximum diode commutation speed4) | 500 | A/μs | |||
| TJ , TSTG | Operating and Storage Temperature Range | -55 | 150 | |||
| IS | Continuous diode forward current TC=25°C | 55 | A | |||
| IS,pulse | Diode pulse current2) TC=25°C | 165 | A | |||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance, Junction to Case, Max. | 0.25 | °C/W | |||
| RθJA | Thermal Resistance, Junction to Ambient, Max. | 62 | °C/W | |||
| Tsold | Soldering temperature, wavesoldering only allowed at leads | 260 | °C | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V, Tj = 25°C | 10 | μA | ||
| IGSS | Gate-Source Leakage Current | VGS = ±30 V, VDS = 0 V | ±100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS , ID = 1 mA | 2.8 | 4.8 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 23.5 A, TJ = 25°C | 58 | 65 | mΩ | |
| RG | Gate resistance | VDD=0 V,VGS=0 V,F=1MHz | 3.5 | Ω | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0 V, VDS = 100V, f = 250 kHz | 3990 | pF | ||
| Coss | Output Capacitance | 120 | pF | |||
| Co(tr) | Time Related Output Capacitance1) | VDS = 0 to 400 V, VGS = 0 V | 637 | pF | ||
| Co(er) | Energy Related Output Capacitance2) | 125 | pF | |||
| Qg(tot) | Total Gate Charge at 10 V | VDD = 400 V, ID = 25 A, VGS = 0 to 10 V | 73 | nC | ||
| Qgs | Gate to Source Charge | 18 | nC | |||
| Qgd | Gate to Drain “Miller” Charge | 23 | nC | |||
| Vplateau | Gate plateau voltage | 4.5 | V | |||
| Crss | Reverse Transfer Capacitance | 5 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400 V, ID = 23 A, VGS = 10 V | 66 | ns | ||
| tr | Turn-On Rise Time | 79 | ns | |||
| td(off) | Turn-Off Delay Time | 139 | ns | |||
| tf | Turn-Off Fall Time | 12 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0 V, IF = 23 A, Tf = 25°C | 0.9 | V | ||
| trr | Reverse Recovery Time | VR=400V, IF=23A, diF/dt=100A/μs | 165 | ns | ||
| Qrr | Reverse Recovery Charge | 1.9 | μC | |||
| Irrm | Peak reverse recovery current | 22 | A | |||
| Package and Packing | ||||||
| Part Number | Top Marking | Package | Packing Method | Quantity | ||
| BMT65N065UC1 | BMT65N065UC1 | TOLL | Tape and Reel | 1200 Units | ||
1) Limited by Tj max. Maximum duty cycle D=0.75.
2) Pulse width tp limited by Tj,max.
3) VDD=50V, RG=25Ω, Starting Tj=25°C.
4) VDClink=400V; VDS,peak<V(BR)DSS; identical low side and high side switch with identical RG.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!