Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 22A |
| RDS(on) | 160mΩ |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| Pd - Power Dissipation | 126W |
| Output Capacitance(Coss) | 28pF |
| Input Capacitance(Ciss) | 550pF |
| Gate Charge(Qg) | 40nC |
| Description | N-Channel 1.2kV 22A 126W Through Hole TO-247-4L |
| Mfr. Part # | BCZ120N160W1 |
| Package | TO-247-4L |
| Model Number | BCZ120N160W1 |
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Product Specification
| Drain to Source Voltage | 1.2kV | Current - Continuous Drain(Id) | 22A |
| RDS(on) | 160mΩ | Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | Pd - Power Dissipation | 126W |
| Output Capacitance(Coss) | 28pF | Input Capacitance(Ciss) | 550pF |
| Gate Charge(Qg) | 40nC | Description | N-Channel 1.2kV 22A 126W Through Hole TO-247-4L |
| Mfr. Part # | BCZ120N160W1 | Package | TO-247-4L |
| Model Number | BCZ120N160W1 |
The BCZ120N160W1 is a N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It offers a high blocking voltage of 1200V combined with low on-resistance (160 m typ.) and high-speed switching capabilities due to low capacitances. This MOSFET is easy to parallel and simple to drive, featuring avalanche ruggedness and compliance with Halogen Free and RoHS standards. Its design contributes to higher system efficiency, reduced cooling requirements, increased power density, and enables higher system switching frequencies. It is suitable for applications including Solar Inverters, Switch Mode Power Supplies, High Voltage DC/DC Converters, Battery Chargers, Motor Drives, and Pulsed Power applications.
| Parameter | Test Conditions | Value | Unit |
|---|---|---|---|
| Model | BCZ120N160W1 | ||
| Drain - Source Voltage (VDSmax) | VGS=0V, ID=100A | 1200 | V |
| Continuous Drain Current (ID) | VGS=18V, TC=25C | 22 | A |
| Continuous Drain Current (ID) | VGS=18V, TC=100C | 16 | A |
| On-Resistance (RDS(on), typ) | VGS = 18 V, ID = 10 A, TC = 25C | 160 | m |
| Gate Charge (Qg, typ) | 40 | nC | |
| Gate - Source Voltage (VGSmax) | Absolute maximum values | -8 / +22 | V |
| Gate - Source Voltage (VGSop) | Recommended operational values | -5 / +18 | V |
| Pulse Drain Current (IDM) | Pulse width limited by Tjmax | 58 | A |
| Operating Junction and Storage Temperature (TJ, TSTG) | -55 to 175 | C | |
| Thermal Resistance, Junction to Case (RJC, Max.) | 1.19 | /W | |
| Thermal Resistance, Junction to Ambient (RJA, Max.) | 27.47 | /W | |
| Soldering temperature (Tsold) | wave soldering only allowed at leads | 260 | |
| Power Dissipation (PD) | TC = 25 | 126 | W |
| Derate Above 25 | 0.84 | W/ | |
| Drain to Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID=100 A | 1200 | V |
| Gate Threshold Voltage (VGS(th)) | VGS = VDS, ID=5.0 mA, TC=25C | 2.0 - 3.4 - 4.0 | V |
| Gate Threshold Voltage (VGS(th)) | VGS = VDS, ID=5.0 mA, TC=150C | 2.7 | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 1200 V, VGS = 0 V | 10 - 100 | A |
| Gate-Source Leakage Current (IGSS) | VGS = 18 V, VDS = 0 V | 10 - 200 | nA |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 18 V, ID = 10 A, TC = 25C | 130 - 180 | m |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 15 V, ID = 10 A, TC = 25C | 160 - 190 | m |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 18 V, ID = 10 A, TC = 150C | 230 | m |
| Transconductance (gfs) | VGS = 18 V, ID = 10 A, TJ = 25C | 6.2 | S |
| Transconductance (gfs) | VGS = 18 V, ID = 10 A, TJ = 150C | 3.7 | S |
| Input Capacitance (Ciss) | VGS=0V, VDS=800 V, f=1MHz, VAC=25 mV | 818 | pF |
| Output Capacitance (Coss) | 41 | ||
| Reverse Transfer Capacitance (Crss) | 8 | ||
| Diode Forward Voltage (VSD) | VGS = -5 V, ISD = 5 A, TJ = 25C | 3.7 | V |
| Diode Forward Voltage (VSD) | VGS = -5 V, ISD = 5 A, TJ = 150C | 3.2 | V |
| Continuous Diode Forward Current (IS) | TC = 25 | 30 | A |
| Reverse Recovery time (trr) | VGS = -5V, ISD = 10 A, VR= 800V, dif / dt=1200A/s | 10 | ns |
| Reverse Recovery Charge (Qrr) | 40 | nC | |
| Peak Reverse Recovery Current (Irrm) | 3 | A | |
| Turn-On Switching Energy (EON) | VDS=800V, VGS= -5/18V,ID=10A, RG(ext) = 0, L= 256H | 200 | J |
| Turn-Off Switching Energy (EOFF) | VDS=800V, VGS= -5/18V,ID=100A, RG(ext) = 0, Timing relative to VDS | 20 | ns |
| Turn-On Delay Time (td(on)) | 45 | ns | |
| Rise Time (tr) | 20 | ns | |
| Turn-Off Delay Time (td(off)) | 15 | ns | |
| Fall Time (tf) | 10.0 | ||
| Internal Gate Resistance (RG(int)) | f= 1 MHz, VAC=25mV | 9.6 | nC |
| Gate to Source Charge (Qgs) | VDD=800V, VGS= -5/18V,ID=10A | 19 | |
| Gate to Drain Charge (Qgd) | 40 | nC | |
| Total Gate Charge (Qg) | 126 | W | |
| Package Type | TO247-4L | ||
| Packing Method | Tube | ||
| Quantity | 30 units |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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