China factories

Chat Now Send Email
China factory - Hefei Purple Horn E-Commerce Co., Ltd.

Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
  • Verified Supplier
  1. Home
  2. Products
  3. About Us
  4. Contact Us

Leave a Message

we will call you back quickly!

Submit Requirement
China switching device Bestirpower BMB80N180C1 N Channel MOSFET designed for power
China switching device Bestirpower BMB80N180C1 N Channel MOSFET designed for power

  1. China switching device Bestirpower BMB80N180C1 N Channel MOSFET designed for power
  2. China switching device Bestirpower BMB80N180C1 N Channel MOSFET designed for power
  3. China switching device Bestirpower BMB80N180C1 N Channel MOSFET designed for power

switching device Bestirpower BMB80N180C1 N Channel MOSFET designed for power

  1. MOQ:
  2. Price:
  3. Get Latest Price
Drain to Source Voltage 800V
Current - Continuous Drain(Id) 23A
Operating Temperature - -55℃~+150℃
RDS(on) 180mΩ@10V
Gate Threshold Voltage (Vgs(th)) 3.5V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 1.9pF@100V
Number 1 N-channel
Input Capacitance(Ciss) 2.44nF@100V
Pd - Power Dissipation 250W
Gate Charge(Qg) 56nC
Description N-Channel 800V 23A 250W Surface Mount TO-263-2L
Mfr. Part # BMB80N180C1
Package TO-263-2L
Model Number BMB80N180C1

View Detail Information

Inquiry by Email Get Latest Price
Chat online Now Ask for best deal
  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 800V Current - Continuous Drain(Id) 23A
Operating Temperature - -55℃~+150℃ RDS(on) 180mΩ@10V
Gate Threshold Voltage (Vgs(th)) 3.5V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 1.9pF@100V Number 1 N-channel
Input Capacitance(Ciss) 2.44nF@100V Pd - Power Dissipation 250W
Gate Charge(Qg) 56nC Description N-Channel 800V 23A 250W Surface Mount TO-263-2L
Mfr. Part # BMB80N180C1 Package TO-263-2L
Model Number BMB80N180C1

Product Overview

The BMB80N180C1 is a high-performance N-Channel Power MOSFET from Bestirpower, engineered with advanced super junction technology. This MOSFET offers exceptionally low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling. Designed for user-friendliness, it provides designers with the advantage of Low EMI and reduced switching losses. Key applications include PC power supplies, server power supplies, telecommunications, LED lighting, EV chargers, and solar/UPS systems. It features an ultra-fast body diode, extremely low losses due to a very low FOM (Figure of Merit), and very high commutation ruggedness. This device is Halogen Free and RoHS compliant.

Product Attributes

  • Brand: Bestirpower
  • Technology: Advanced Super Junction
  • Certifications: Halogen Free, RoHS Compliant

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit
Description
VDS@TJ,max Drain to Source Voltage at TJ,max 850 V
ID Drain Current (TC = 25) 23 A
ID Drain Current (TC = 100) 15 A
RDS(on),max On-Resistance 150 180 m
Qg,typ Total Gate Charge 56 nC
Absolute Maximum Ratings (TC= 25 unless otherwise noted)
VDS Drain to Source Voltage1) 800 V
VGS Gate to Source Voltage 30 V
ID Drain Current Continuous (TC = 25) 23 A
ID Drain Current Continuous (TC = 100) 15 A
IDM Drain Current Pulsed 70 A
dv/dt MOSFET dv/dt ruggedness 50 V/ns
dv/dt Diode Recovery dv/dt ruggedness 50 V/ns
TJ, TSTG Storage Temperature Range -55 150
TL Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds 260
Thermal Characteristics
RJC Thermal Resistance, Junction to Case, Max. 0.5 /W
RJA Thermal Resistance, Junction to Ambient, Max. *minimal footprint 62.5 /W
PD Power Dissipation (TC = 25) 250 W
EAS Single Pulsed Avalanche Energy 845 mJ
IAR Repetitive Avalanche Energy 13 A
Electrical Characteristics (TJ = 25 unless otherwise noted)
Off Characteristics
BVDSS Drain to Source Breakdown Voltage VGS= 0 V, ID = 250A 800 - - V
IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V TJ=25C - - 10 A
IGSS Gate-Source Leakage Current VGS= 30 V, VDS= 0 V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VGS= VDS, ID = 250A 2.5 3.5 4.5 V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 12A, TJ=25C - 150 180 m
Dynamic Characteristics
Ciss Input Capacitance VGS=0V, VDS=100V, f=250KHz - 2440 - pF
Coss Output Capacitance - 83 - pF
Crss Reverse Transfer Capacitance - 1.9 - pF
Co(er) Energy Related Output Capacitance VGS= 0V,VDS= 0V to 500 V - 66 - pF
Qg Total Gate Charge VGS = 10V, VDD =640V, ID = 24A - 56 - nC
Qgs Gate to Source Charge - 15 - nC
Qgd Gate to Drain Miller Charge - 21 - nC
Vplateau Gate plateau voltage - 5.5 - V
RG Gate Resistance VDD =0V, VGS = 0V, f = 1.0MHz - - 4
Switching Characteristics
td(on) Turn-On Delay Time VGS = 10V, VDD= 400V, ID= 12A - 20 - ns
tr Turn-On Rise Time - 13 - ns
td(off) Turn-Off Delay Time - 117 - ns
tf Turn-Off Fall Time - 12 - ns
Co(tr) Time Related Output Capacitance VGS= 0V,VDS= 0V to 500 V - 214 - pF
Reverse Diode Characteristics
ISD Continuous Diode Forward Current - - 23 A
VSD Diode Forward Voltage IF = 12A, VGS = 0V - 0.8 - V
trr Reverse Recovery Time VR = 60V IF =24A diF/dt = 100A/s - 375 - ns
Qrr Reverse Recovery Charge - 6.7 - C
Irrm Reverse Recovery Current - - 29 A
Package Marking and Ordering Information
Part Number Top Marking Package Packing Method Quantity
BMB80N180C1 BMB80N180C1 TO263-2L Tape & Reel 800 units

Applications:

  • PC power
  • Server power supply
  • Telecom
  • LED lighting
  • EV Charger
  • Solar/UPS

Features:

  • Ultra-fast body diode.
  • Extremely low losses due to very low FOM.
  • Very high commutation ruggedness.
  • Halogen Free, and RoHS Conlicant.

2504141434_Bestirpower-BMB80N180C1_C47715870.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

+ Read More

Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

Leave a Message, we will call you back quickly!

Email

Check your email

Phone Number

Check your phone number

Requirement Details

Your message must be between 20-3,000 characters!

Submit Requirement