Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 80mΩ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Input Capacitance(Ciss) | 885pF |
| Output Capacitance(Coss) | 65pF |
| Pd - Power Dissipation | 150W |
| Gate Charge(Qg) | 50nC |
| Description | 1.2kV 30A 80mΩ 3V 150W TO-263-7L Single FETs, MOSFETs RoHS |
| Mfr. Part # | BCBF120N80M1 |
| Package | TO-263-7L |
| Model Number | BCBF120N80M1 |
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Product Specification
| Drain to Source Voltage | 1.2kV | Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 80mΩ |
| Gate Threshold Voltage (Vgs(th)) | 3V | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | Input Capacitance(Ciss) | 885pF |
| Output Capacitance(Coss) | 65pF | Pd - Power Dissipation | 150W |
| Gate Charge(Qg) | 50nC | Description | 1.2kV 30A 80mΩ 3V 150W TO-263-7L Single FETs, MOSFETs RoHS |
| Mfr. Part # | BCBF120N80M1 | Package | TO-263-7L |
| Model Number | BCBF120N80M1 |
The Bestirpower BCBF120N80M1 is a 1200 V, 34 A, 80 m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. This MOSFET offers significant advantages including system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed with low gate charge and fast intrinsic diode with low reverse recovery. It also features robust avalanche capability and is 100% avalanche tested. The device is Pb-free, Halogen Free, and RoHS Compliant.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TJ = 25 unless otherwise noted) | ||||||
| VDSS | Drain to Source Voltage | 1200 | V | |||
| VGS | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current | VGS = 18 V,(TC = 25) | 34 | A | ||
| VGS = 18 V,(TC = 100) | 24 | A | ||||
| IDM | Drain Current Pulsed (Note1) | 80 | A | |||
| PD | Power Dissipation (TC = 25) | 150 | W | |||
| Derate Above 25 | 1.0 | W/ | ||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| TL | Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds | 260 | ||||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 1 | 100 | A | |
| VDS = 1200 V, VGS = 0 V, TJ = 175 | 5 | A | ||||
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | +100 | nA | ||
| VGS = -10 V, VDS = 0 V | -100 | nA | ||||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 5.0 mA (tested after VGS = 22 V, 1 ms pulse) | 2.0 | 3.0 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 15 A | 80 | 110 | m | |
| VGS = 18 V, ID = 15 A, TJ = 175 | 128 | m | ||||
| gfs | Transconductance | VDS = 20 V, ID = 15 A | 11.4 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 800 V, VGS = 0V, f = 250 kHz | 880 | pF | ||
| Coss | Output Capacitance | 64 | pF | |||
| Crss | Reverse Capacitance | 5 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 800 V, VGS = 0 V | 26 | J | ||
| Co(er) | Energy Related Output Capacitance | 80 | pF | |||
| Co(tr) | Time Related Output Capacitance | 142 | pF | |||
| Qg(tot) | Total Gate Charge | VDS = 800 V, ID = 15 A, VGS = -5 V / 18 V, Inductive load | 50 | nC | ||
| Qgs | Gate to Source Charge | 12 | nC | |||
| Qgd | Gate to Drain Miller Charge | 15 | nC | |||
| RG | Internal Gate Resistance | f = 1 MHz | 4.0 | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 800 V, ID = 15 A, VGS = -5 V / 18 V, RG = 2 , FWD : BCH120S010D1, Inductive load | 12 | ns | ||
| tr | Turn-On Rise Time | 10 | ns | |||
| td(off) | Turn-Off Delay Time | 24 | ns | |||
| tf | Turn-Off Fall Time | 9 | ns | |||
| Eon | Turn-on Switching Energy | 71 | J | |||
| Eoff | Turn-off Switching Energy | 41 | J | |||
| Etot | Total Switching Energy | 112 | J | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Maximum Continuous Diode Forward Current | 30 | A | |||
| ISM | Maximum Pulsed Diode Forward Current | 80 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 15 A | 4.1 | V | ||
| trr | Reverse Recovery Time | VDD = 800 V, ISD = 15 A, dIF/dt = 3000 A/s, Includes Qoss | 12 | ns | ||
| Qrr | Reverse Recovery Charge | 121 | nC | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 1 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 40 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
Package Outline: TO263-7L
Package Marking and Ordering Information:
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BCBF120N80M1 | BCBF120N80M1 | TO263-7L | Tape & Reel | 800 units |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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