| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 35A |
| RDS(on) | 100mΩ@10V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V@1000uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF@50V |
| Number | 1 N-channel |
| Pd - Power Dissipation | 278W |
| Input Capacitance(Ciss) | 2.99nF@50V |
| Gate Charge(Qg) | 66nC |
| Description | N-Channel 650V 35A 278W Through Hole TO-247-3 |
| Mfr. Part # | BMW65N100UC1 |
| Package | TO-247-3 |
| Model Number | BMW65N100UC1 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 35A |
| RDS(on) | 100mΩ@10V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V@1000uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF@50V | Number | 1 N-channel |
| Pd - Power Dissipation | 278W | Input Capacitance(Ciss) | 2.99nF@50V |
| Gate Charge(Qg) | 66nC | Description | N-Channel 650V 35A 278W Through Hole TO-247-3 |
| Mfr. Part # | BMW65N100UC1 | Package | TO-247-3 |
| Model Number | BMW65N100UC1 |
The BMW65N100UC1 is a 650 V, 35 A N-Channel Power MOSFET from Bestirpower, leveraging advanced super junction technology for exceptionally low on-resistance and gate charge. This design optimizes charge coupling for significantly higher efficiency, offering designers the advantage of low EMI and reduced switching losses. Its ultra-fast body diode and extremely low FOM (Rdson*Qg and Eoss) contribute to very low losses, while its high commutation ruggedness makes it suitable for demanding applications.
| Feature | Value | Unit |
|---|---|---|
| Part Number | BMW65N100UC1 | |
| Type | N-Channel Power MOSFET | |
| Drain to Source Voltage (BVDSS@TJ,max) | 700 | V |
| Continuous Drain Current (ID @ TC=25) | 35 | A |
| Continuous Drain Current (ID @ TC=100) | 22 | A |
| Static Drain to Source On Resistance (RDS(on),max @ VGS=10V, ID=18A, TJ=25) | 100 | m |
| Total Gate Charge (Qg,typ @ VDD=400V, ID=18A, VGS=0 to 10V) | 66 | nC |
| Drain to Source Breakdown Voltage (BVDSS) | 650 | V |
| Gate to Source Voltage (VGSS) | 30 | V |
| Drain Current Pulsed (IDM) | 105 | A |
| Single Pulsed Avalanche Energy (EAS) | 750 | mJ |
| MOSFET dv/dt ruggedness | 50 | V/ns |
| Peak Diode Recovery dv/dt | 50 | V/ns |
| Power Dissipation (PD @ TC=25) | 278 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | |
| Continuous Diode Forward Current (Is) | 35 | A |
| Pulse Diode Pulse Current (Is Pulse) | 105 | A |
| Thermal Resistance, Junction to Case (RJC, Max.) | 0.45 | /W |
| Thermal Resistance, Junction to Ambient (RJA, Max.) | 62 | /W |
| Soldering Temperature (Tsold, wavesoldering at leads) | 260 | |
| Zero Gate Voltage Drain Current (IDSS @ VDS=650V, VGS=0V) | 10 | A |
| Gate-Source Leakage Current (IGSS @ VGS=30V, VDS=0V) | 100 | nA |
| Gate Threshold Voltage (VGS(th) @ VGS=VDS, ID=1mA) | 3.5 - 4.5 | V |
| Static Drain to Source On Resistance (RDS(on) @ VGS=10V, ID=18A, TJ=25) | 82 - 100 | m |
| Input Capacitance (Ciss @ VGS=0V, VDS=50V, f=250KHz) | 2990 | pF |
| Output Capacitance (Coss @ VGS=0V, VDS=50V, f=250KHz) | 141 | pF |
| Time Related Output Capacitance (Co(tr) @ VDS=0 to 400V, VGS=0V) | 452 | pF |
| Energy Related Output Capacitance (Co(er) @ VDS=0 to 400V, VGS=0V) | 88 | pF |
| Reverse transfer capacitance (Crss @ VGS=0V, VDS=50V, f=250KHz) | 5.8 | pF |
| Gate to Source Charge (Qgs) | 20 | nC |
| Gate to Drain Miller Charge (Qgd) | 25 | nC |
| Gate Resistance (RG @ f=1MHz) | 2.7 | |
| Turn-On Delay Time (td(on) @ VDD=400V, ID=18A, VGS=10V) | 21 | ns |
| Turn-On Rise Time (tr @ VDD=400V, ID=18A, VGS=10V) | 19 | ns |
| Turn-Off Delay Time (td(off) @ VDD=400V, ID=18A, VGS=10V) | 76 | ns |
| Turn-Off Fall Time (tf @ VDD=400V, ID=18A, VGS=10V) | 8 | ns |
| Diode Forward Voltage (VSD @ IF=18A, TJ=25) | 0.88 | V |
| Reverse Recovery Time (trr @ VR=400V, IF=18A, diF/dt=100A/s) | 140 | ns |
| Reverse Recovery Charge (Qrr @ VR=400V, IF=18A, diF/dt=100A/s) | 1.15 | C |
| Peak Reverse Recovery Current (Imm) | 15 | A |
| Package Marking | BMW65N100UC1 | |
| Packing Method | Tube | |
| Quantity per Package | 30 | units |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!