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Hefei Purple Horn E-Commerce Co., Ltd.

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China 650 Volt 35 Amp N Channel Power MOSFET Bestirpower BMW65N100UC1 Featuring Ultra
China 650 Volt 35 Amp N Channel Power MOSFET Bestirpower BMW65N100UC1 Featuring Ultra

  1. China 650 Volt 35 Amp N Channel Power MOSFET Bestirpower BMW65N100UC1 Featuring Ultra

650 Volt 35 Amp N Channel Power MOSFET Bestirpower BMW65N100UC1 Featuring Ultra

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Drain to Source Voltage 650V
Current - Continuous Drain(Id) 35A
RDS(on) 100mΩ@10V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 4V@1000uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 5.8pF@50V
Number 1 N-channel
Pd - Power Dissipation 278W
Input Capacitance(Ciss) 2.99nF@50V
Gate Charge(Qg) 66nC
Description N-Channel 650V 35A 278W Through Hole TO-247-3
Mfr. Part # BMW65N100UC1
Package TO-247-3
Model Number BMW65N100UC1

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 650V Current - Continuous Drain(Id) 35A
RDS(on) 100mΩ@10V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 4V@1000uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 5.8pF@50V Number 1 N-channel
Pd - Power Dissipation 278W Input Capacitance(Ciss) 2.99nF@50V
Gate Charge(Qg) 66nC Description N-Channel 650V 35A 278W Through Hole TO-247-3
Mfr. Part # BMW65N100UC1 Package TO-247-3
Model Number BMW65N100UC1

Product Overview

The BMW65N100UC1 is a 650 V, 35 A N-Channel Power MOSFET from Bestirpower, leveraging advanced super junction technology for exceptionally low on-resistance and gate charge. This design optimizes charge coupling for significantly higher efficiency, offering designers the advantage of low EMI and reduced switching losses. Its ultra-fast body diode and extremely low FOM (Rdson*Qg and Eoss) contribute to very low losses, while its high commutation ruggedness makes it suitable for demanding applications.

Product Attributes

  • Brand: Bestirpower
  • Technology: Advanced Super Junction
  • Package: TO247-3
  • Diode Type: Ultra-fast body diode

Technical Specifications

Feature Value Unit
Part Number BMW65N100UC1
Type N-Channel Power MOSFET
Drain to Source Voltage (BVDSS@TJ,max) 700 V
Continuous Drain Current (ID @ TC=25) 35 A
Continuous Drain Current (ID @ TC=100) 22 A
Static Drain to Source On Resistance (RDS(on),max @ VGS=10V, ID=18A, TJ=25) 100 m
Total Gate Charge (Qg,typ @ VDD=400V, ID=18A, VGS=0 to 10V) 66 nC
Drain to Source Breakdown Voltage (BVDSS) 650 V
Gate to Source Voltage (VGSS) 30 V
Drain Current Pulsed (IDM) 105 A
Single Pulsed Avalanche Energy (EAS) 750 mJ
MOSFET dv/dt ruggedness 50 V/ns
Peak Diode Recovery dv/dt 50 V/ns
Power Dissipation (PD @ TC=25) 278 W
Operating and Storage Temperature Range (TJ, TSTG) -55 to 150
Continuous Diode Forward Current (Is) 35 A
Pulse Diode Pulse Current (Is Pulse) 105 A
Thermal Resistance, Junction to Case (RJC, Max.) 0.45 /W
Thermal Resistance, Junction to Ambient (RJA, Max.) 62 /W
Soldering Temperature (Tsold, wavesoldering at leads) 260
Zero Gate Voltage Drain Current (IDSS @ VDS=650V, VGS=0V) 10 A
Gate-Source Leakage Current (IGSS @ VGS=30V, VDS=0V) 100 nA
Gate Threshold Voltage (VGS(th) @ VGS=VDS, ID=1mA) 3.5 - 4.5 V
Static Drain to Source On Resistance (RDS(on) @ VGS=10V, ID=18A, TJ=25) 82 - 100 m
Input Capacitance (Ciss @ VGS=0V, VDS=50V, f=250KHz) 2990 pF
Output Capacitance (Coss @ VGS=0V, VDS=50V, f=250KHz) 141 pF
Time Related Output Capacitance (Co(tr) @ VDS=0 to 400V, VGS=0V) 452 pF
Energy Related Output Capacitance (Co(er) @ VDS=0 to 400V, VGS=0V) 88 pF
Reverse transfer capacitance (Crss @ VGS=0V, VDS=50V, f=250KHz) 5.8 pF
Gate to Source Charge (Qgs) 20 nC
Gate to Drain Miller Charge (Qgd) 25 nC
Gate Resistance (RG @ f=1MHz) 2.7
Turn-On Delay Time (td(on) @ VDD=400V, ID=18A, VGS=10V) 21 ns
Turn-On Rise Time (tr @ VDD=400V, ID=18A, VGS=10V) 19 ns
Turn-Off Delay Time (td(off) @ VDD=400V, ID=18A, VGS=10V) 76 ns
Turn-Off Fall Time (tf @ VDD=400V, ID=18A, VGS=10V) 8 ns
Diode Forward Voltage (VSD @ IF=18A, TJ=25) 0.88 V
Reverse Recovery Time (trr @ VR=400V, IF=18A, diF/dt=100A/s) 140 ns
Reverse Recovery Charge (Qrr @ VR=400V, IF=18A, diF/dt=100A/s) 1.15 C
Peak Reverse Recovery Current (Imm) 15 A
Package Marking BMW65N100UC1
Packing Method Tube
Quantity per Package 30 units

Applications

  • AC/DC power supply
  • PC power
  • Telecom/Server
  • Solar inverter

2504161749_Bestirpower-BMW65N100UC1_C47994747.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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