Hefei Purple Horn E-Commerce Co., Ltd.
| Configuration | - |
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 40mΩ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Output Capacitance(Coss) | 125pF |
| Pd - Power Dissipation | 375W |
| Input Capacitance(Ciss) | 1.96nF |
| Gate Charge(Qg) | 109nC |
| Description | N-Channel 1.2kV 60A 375W Through Hole TO-247-4L |
| Mfr. Part # | BCZ120N40M1 |
| Package | TO-247-4L |
| Model Number | BCZ120N40M1 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Configuration | - | Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 60A | Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 40mΩ | Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Output Capacitance(Coss) | 125pF | Pd - Power Dissipation | 375W |
| Input Capacitance(Ciss) | 1.96nF | Gate Charge(Qg) | 109nC |
| Description | N-Channel 1.2kV 60A 375W Through Hole TO-247-4L | Mfr. Part # | BCZ120N40M1 |
| Package | TO-247-4L | Model Number | BCZ120N40M1 |
The BCZ120N40M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. It offers a 1200V drain-to-source voltage, 60A continuous drain current, and a low on-resistance of 40m. This MOSFET provides significant advantages including system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed, low gate charge, and fast intrinsic diode with low reverse recovery. Its robust avalanche capability, 100% avalanche tested, and compliance with Pb-free, Halogen Free, and RoHS standards make it a reliable choice for various industrial applications.
The BCZ120N40M1 is a 1200V, 60A, 40m N-Channel Silicon Carbide Power MOSFET. It is engineered to enhance system efficiency, enable higher operating frequencies, and increase power density while reducing cooling requirements. Key features include high switching speed with low gate charge, a fast intrinsic diode with minimal reverse recovery, and robust avalanche capability. This MOSFET is ideal for applications such as solar inverters, EV charging stations, UPS systems, and industrial power supplies.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage | (TC = 25 unless otherwise noted) | 1200 | V | ||
| VGS | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current Continuous (VGS=18V, TC = 25) | 60 | A | |||
| ID | Drain Current Continuous (VGS=18V, TC = 100) | 42 | A | |||
| IDM | Drain Current Pulsed (Note1) | 160 | A | |||
| EAS | Avalanche Capability | VDD=100V, VGS=20V, L=2mH | 1000 | mJ | ||
| IAV | Avalanche Capability | VDD=100V, VGS=20V, L=2mH | 30 | A | ||
| PD | Power Dissipation (TC = 25) | 375 | W | |||
| Derate Above 25 | 2.5 | W/ | ||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| Electrical Characteristics (TC = 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 1 | 100 | A | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V, TJ = 175 | 5 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | +100 | nA | ||
| IGSS | Gate-Source Leakage Current | VGS = -10 V, VDS = 0 V | -100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 10 mA | 2.0 | 3.0 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 30 A | 40 | 56 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 40 A | 40 | m | ||
| gfs | Transconductance | VDS = 20 V, ID = 30 A | 15 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 800 V, VGS = 0V, f = 250 kHz | 1960 | pF | ||
| Coss | Output Capacitance | 125 | pF | |||
| Crss | Reverse Capacitance | 5 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 800 V, VGS = 0 V | 50 | J | ||
| Qg(tot) | Total Gate Charge | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V | 109 | nC | ||
| Source-Drain Diode Characteristics | ||||||
| IS | Maximum Continuous Diode Forward Current | 60 | A | |||
| ISM | Maximum Pulsed Diode Forward Current | 160 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 30 A | 4.2 | V | ||
| trr | Reverse Recovery Time | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/s | 22 | ns | ||
| Qrr | Reverse Recovery Charge | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/s | 348 | nC | ||
| trr | Reverse Recovery Time | VGS=-5V, VDD = 800 V, ISD = 40 A, dIF/dt = 4200 A/s | 13 | ns | ||
| Qrr | Reverse Recovery Charge | VGS=-5V, VDD = 800 V, ISD = 40 A, dIF/dt = 4200 A/s | 182 | nC | ||
| Irrm | Peak Reverse Recovery Current | 23 | A | |||
| Thermal Resistance | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.4 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 34 | /W | |||
| Soldering Conditions | ||||||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
Package Outlines: TO247-4L
Dimensions (in millimeters):
| SYMBOL | MIN | NOM | MAX |
|---|---|---|---|
| A | 4.80 | 5.00 | 5.20 |
| A1 | 2.21 | 2.41 | 2.61 |
| A2 | 1.80 | 2.00 | 2.20 |
| b | 1.06 | 1.21 | 1.36 |
| b1 | 2.33 | 2.63 | 2.93 |
| b3 | 1.07 | 1.30 | 1.60 |
| c | 0.51 | 0.61 | 0.75 |
| D | 23.30 | 23.45 | 23.60 |
| D1 | 16.25 | 16.55 | 16.85 |
| E | 15.74 | 15.94 | 16.14 |
| E1 | 13.72 | 14.02 | 14.32 |
| T1 | 2.35 | 2.50 | 2.65 |
| e | 2.54 | BSC | |
| e1 | 5.08 | BSC | |
| Q | 5.49 | 5.79 | 6.09 |
| L | 17.27 | 17.57 | 17.87 |
| L1 | 3.99 | 4.19 | 4.39 |
| p | 3.40 | 3.60 | 3.80 |
| p1 | 7.19 | REF |
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BCZ120N40M1 | BCZ120N40M1 | TO247-4L | Tube | 30 units |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!