| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 95A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 7mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF |
| Number | - |
| Output Capacitance(Coss) | 345pF |
| Input Capacitance(Ciss) | 3.7nF |
| Pd - Power Dissipation | 143W |
| Gate Charge(Qg) | 80nC@10V |
| Description | 60V 95A 7mΩ@10V 4V@250uA 143W TO-252-2 Single FETs, MOSFETs RoHS |
| Mfr. Part # | BLM07N06-D |
| Package | TO-252-2 |
| Model Number | BLM07N06-D |
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Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 95A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 7mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF | Number | - |
| Output Capacitance(Coss) | 345pF | Input Capacitance(Ciss) | 3.7nF |
| Pd - Power Dissipation | 143W | Gate Charge(Qg) | 80nC@10V |
| Description | 60V 95A 7mΩ@10V 4V@250uA 143W TO-252-2 Single FETs, MOSFETs RoHS | Mfr. Part # | BLM07N06-D |
| Package | TO-252-2 | Model Number | BLM07N06-D |
| Parameter | Symbol | Condition | Limit | Unit | |
|---|---|---|---|---|---|
| Key Characteristics | |||||
| Drain-Source Voltage | VDS | 60 | V | ||
| Drain Current-Continuous | ID | 95 | A | ||
| RDS(ON) | RDS(ON) | VGS=10V | < 7 | m | |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | |||||
| Drain-Source Voltage | VDS | 60 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | ||
| Drain Current-Continuous | ID | 95 | A | ||
| Drain Current-Pulsed (Note 1) | IDM | 380 | A | ||
| Maximum Power Dissipation (Tc=25) | PD | 143 | W | ||
| Single pulse avalanche energy (Note 2) | EAS | 260 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 175 | |||
| Thermal Characteristic | |||||
| Thermal Resistance,Junction-to-Case | RJC | 1.05 | /W | ||
| Thermal Resistance,Junction-to-Ambient | RJA | 62.5 | /W | ||
| Electrical Characteristics (TA=25 unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 60 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | 1 µA | |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | ±100 nA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250µA | 2 | 2.8 | 4 V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=30A (Note 3) | - | 6.0 | 7.0 m |
| Forward Transconductance | gFS | VDS=5V,ID=15 | - | 1 | S |
| Dynamic Characteristics | |||||
| Input Capacitance | Clss | VDS=30V,VGS=0V, f=1.0MHz | - | 3700 | pF |
| Output Capacitance | Coss | - | 345 | pF | |
| Reverse Transfer Capacitance | Crss | - | 270 | pF | |
| Switching Characteristics (Note 4) | |||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=30A, VGS=10V,RGEN=3Ω | - | 19 | nS |
| Turn-on Rise Time | tr | - | 36 | nS | |
| Turn-Off Delay Time | td(off) | - | 45 | nS | |
| Turn-Off Fall Time | tf | 24 | - | nS | |
| Total Gate Charge | Qg | VDS=48V,ID=30A, VGS=10V | - | 80 | nC |
| Gate-Source Charge | Qgs | - | 25 | nC | |
| Gate-Drain Charge | Qgd | - | 22 | nC | |
| Drain-Source Diode Characteristics | |||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A | - | - | 1.2 V |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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