Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 30A |
| RDS(on) | 80mΩ |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Output Capacitance(Coss) | 64pF |
| Input Capacitance(Ciss) | 880pF |
| Pd - Power Dissipation | 150W |
| Gate Charge(Qg) | 52nC |
| Description | N-Channel 1.2kV 30A 150W Through Hole TO-247-4 |
| Mfr. Part # | BCZ120N80M1 |
| Package | TO-247-4 |
| Model Number | BCZ120N80M1 |
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Product Specification
| Drain to Source Voltage | 1.2kV | Current - Continuous Drain(Id) | 30A |
| RDS(on) | 80mΩ | Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | Output Capacitance(Coss) | 64pF |
| Input Capacitance(Ciss) | 880pF | Pd - Power Dissipation | 150W |
| Gate Charge(Qg) | 52nC | Description | N-Channel 1.2kV 30A 150W Through Hole TO-247-4 |
| Mfr. Part # | BCZ120N80M1 | Package | TO-247-4 |
| Model Number | BCZ120N80M1 |
The BCZ120N80M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It offers a robust 1200 V breakdown voltage and a continuous drain current of 34 A at 25, with a low on-resistance of 80 m. Key benefits include system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed and low gate charge. The device features a fast intrinsic diode with low reverse recovery, robust avalanche capability, and is 100% avalanche tested. It is also Pb-free, Halogen-free, and RoHS compliant. Ideal for solar inverters, EV charging stations, UPS systems, and industrial power supplies.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VDSS | Drain to Source Voltage | 1200 | V | |||
| VGS | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current | VGS = 18 V, (TC = 25) | 34 | A | ||
| ID | Drain Current | VGS = 18 V, (TC = 100) | 24 | A | ||
| IDM | Drain Current Pulsed (Note1) | 80 | A | |||
| PD | Power Dissipation (TC = 25) | 150 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 1 | 100 | A | |
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | +100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 5.0 mA | 2.0 | 3.0 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 15 A | 80 | 110 | m | |
| gfs | Transconductance | VDS = 20 V, ID = 15 A | 11.4 | S | ||
| Ciss | Input Capacitance | VDS = 800 V, VGS = 0V, f = 250 kHz | 880 | pF | ||
| Coss | Output Capacitance | 64 | pF | |||
| Crss | Reverse Capacitance | 5 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 800 V, VGS = 0 V | 26 | J | ||
| Co(er) | Energy Related Output Capacitance | 80 | pF | |||
| Co(tr) | Time Related Output Capacitance | 142 | pF | |||
| Qg(tot) | Total Gate Charge | VDS = 800 V, ID = 15 A, VGS = -5 V / 18 V, Inductive load | 52 | nC | ||
| Qgs | Gate to Source Charge | 13 | nC | |||
| Qgd | Gate to Drain Miller Charge | 17 | nC | |||
| RG | Internal Gate Resistance | f = 1 MHz | 4.0 | |||
| td(on) | Turn-On Delay Time | VDS = 800 V, ID = 15 A, VGS = -5 V / 18 V, RG = 2 , FWD : BCH120S010D1, Inductive load | 14 | ns | ||
| tr | Turn-On Rise Time | 9 | ns | |||
| td(off) | Turn-Off Delay Time | 24 | ns | |||
| tf | Turn-Off Fall Time | 8 | ns | |||
| Eon | Turn-on Switching Energy | 75 | J | |||
| Eoff | Turn-off Switching Energy | 47 | J | |||
| Etot | Total Switching Energy | 122 | J | |||
| IS | Maximum Continuous Diode Forward Current | 30 | A | |||
| ISM | Maximum Pulsed Diode Forward Current | 80 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 15 A | 4.1 | V | ||
| trr | Reverse Recovery Time | VDD = 800 V, ISD = 15 A, dIF/dt = 3000 A/s, Includes Qoss | 12 | ns | ||
| Qrr | Reverse Recovery Charge | 122 | nC | |||
| RJC | Thermal Resistance, Junction to Case, Max. | 1 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 40 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Part Number | BCZ120N80M1 | |||||
| Top Marking | BCZ120N80M1 | |||||
| Package | TO247-4L | |||||
| Packing Method | Tube | |||||
| Quantity | 30 units |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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