Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 8A |
| RDS(on) | 650mΩ@10V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.16pF@50V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 406pF@50V |
| Pd - Power Dissipation | 62.5W |
| Gate Charge(Qg) | 15nC |
| Description | 600V 8A 650mΩ@10V 4V@250uA 1 N-channel 62.5W TO-252 Single FETs, MOSFETs RoHS |
| Mfr. Part # | BMD60N650UC1Z |
| Package | TO-252 |
| Model Number | BMD60N650UC1Z |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 600V | Current - Continuous Drain(Id) | 8A |
| RDS(on) | 650mΩ@10V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.16pF@50V | Number | 1 N-channel |
| Input Capacitance(Ciss) | 406pF@50V | Pd - Power Dissipation | 62.5W |
| Gate Charge(Qg) | 15nC | Description | 600V 8A 650mΩ@10V 4V@250uA 1 N-channel 62.5W TO-252 Single FETs, MOSFETs RoHS |
| Mfr. Part # | BMD60N650UC1Z | Package | TO-252 |
| Model Number | BMD60N650UC1Z |
The Bestirpower BMx60N650UC1Z is an N-Channel Power MOSFET designed with advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. This user-friendly device provides an advantage of Low EMI and low switching loss, making it suitable for applications such as Power Factor Correction (PFC), adapters, LCD TVs, LED lighting, and Uninterruptible Power Supplies (UPS). Key features include an ultra-fast body diode, extremely low losses due to a very low FOM (Rdson*Qg and Eoss), and very high commutation and ESD ruggedness.
| Model | Package | Top Marking | Packing Method | BVDSS, Tc=25 | ID, Tc=25 | RDS(on),max. Tc=25 | Qg,typ |
|---|---|---|---|---|---|---|---|
| BMx60N650UC1Z | TO-220 | BMF60N650UC1Z | Tube | 600 V | 8 A | 650 m | 15 nC |
| BMx60N650UC1Z | TO-220F | BMB60N650UC1Z | Tube | 600 V | 8 A | 650 m | 15 nC |
| BMx60N650UC1Z | TO-263 | BMD60N650UC1Z | Tape & Reel | 600 V | 8 A | 650 m | 15 nC |
| BMx60N650UC1Z | TO-252 | BMP60N650UC1Z | Tape & Reel | 600 V | 8 A | 650 m | 15 nC |
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| V DSS | Drain to Source Voltage | 600 | V |
| V GSS | Gate to Source Voltage | 25 | V |
| I D | Drain Current Continuous (TC= 25) | 8 | A |
| I D | Drain Current Continuous (TC= 100) | 5 | A |
| I DM | Drain Current Pulsed | 24 | A |
| PD | Power Dissipation For TO-220F | 62.5 | W |
| E AS | Single Pulsed Avalanche Energy | 81 | mJ |
| T STG | Storage Temperature Range | -55 to 150 | |
| T J | Maximum Operating Junction Temperature | 150 | |
| T L | Maximum Lead Temperature for Soldering, 1/8 from Case | 260 | |
| I S | Continuous diode forward current TC=25C | 8 | A |
| I S,pulse | Diode pulse current | 24 | A |
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| RJC | Thermal Resistance, Junction to Case,max | 2 | /W |
| RJA | Thermal Resistance, Junction to Ambient,max | 62 | /W |
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| RJC | Thermal Resistance, Junction to Case,max | 4.9 | /W |
| RJA | Thermal Resistance, Junction to Ambient,max | 49 | /W |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 250A | 600 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 600 V, VGS = 0 V TJ=25C | - | - | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS = 600 V, VGS = 0 V TJ=150C | - | - | 10 | A |
| IGSS | Gate-Source Leakage Current | VGS = 20 V, VDS = 0 V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 250A | 3.0 | - | - | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 3.5A,TJ=25C | - | 550 | 650 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=50V, f=1MHz | - | 406 | - | pF |
| Coss | Output Capacitance | VGS=0V, VDS=50V, f=1MHz | - | 25 | - | pF |
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=50V, f=1MHz | - | 1.16 | - | pF |
| Qg | Total Gate Charge | VGS = 0 to 10V, VDD =480V, ID =4A | - | 15 | - | nC |
| Qgs | Gate to Source Charge | VGS = 0 to 10V, VDD =480V, ID =4A | - | 2.4 | - | nC |
| Qgd | Gate to Drain Miller Charge | VGS = 0 to 10V, VDD =480V, ID =4A | - | 9 | - | nC |
| Vplateau | Gate plateau voltage | VGS = 0 to 10V, VDD =480V, ID =4A | - | 6 | - | V |
| RG | Gate Resistance | VDD = 0V, VGS= 0V,f = 1.0MHz | - | 3.6 | - | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID = 4A, VGS =0 to 10V | - | 26 | - | ns |
| tr | Turn-On Rise Time | VDD = 400V, ID = 4A, VGS =0 to 10V | - | 28 | - | ns |
| td(off) | Turn-Off Delay Time | VDD = 400V, ID = 4A, VGS =0 to 10V | - | 40 | - | ns |
| tf | Turn-Off Fall Time | VDD = 400V, ID = 4A, VGS =0 to 10V | - | 16 | - | ns |
| Reverse Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | IF=4A, VGS = 0V TJ =25C | - | 0.91 | - | V |
| trr | Reverse Recovery Time | VR = 400V, IF =5A diF/dt = 100A/s | - | 80 | - | ns |
| Qrr | Reverse Recovery Charge | VR = 400V, IF =5A diF/dt = 100A/s | - | 0.39 | - | C |
| Irrm | Peak Reverse Recovery Current | VR = 400V, IF =5A diF/dt = 100A/s | - | 9.2 | - | A |
| Co(er) | Effective output capacitance, energy related | VDS= 0 to 400V | - | 4.0 | 5.0 | pF |
| Co(tr) | Effective output capacitance, time related | VDS= 0 to 400V | - | 16 | - | pF |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!