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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Silicon N Channel MOSFET AUD034N04LA Designed for LCD PDP TVs PD Adaptors and
China Silicon N Channel MOSFET AUD034N04LA Designed for LCD PDP TVs PD Adaptors and

  1. China Silicon N Channel MOSFET AUD034N04LA Designed for LCD PDP TVs PD Adaptors and

Silicon N Channel MOSFET AUD034N04LA Designed for LCD PDP TVs PD Adaptors and

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Drain to Source Voltage 40V
Current - Continuous Drain(Id) 125A
RDS(on) 2.9mΩ
Operating Temperature - -
Gate Threshold Voltage (Vgs(th)) 1.7V
Reverse Transfer Capacitance (Crss@Vds) 406pF@20V
Number 1 N-channel
Input Capacitance(Ciss) 5.451nF@20V
Pd - Power Dissipation 105W
Gate Charge(Qg) 156.7nC
Description N-Channel 40V 125A 105W Surface Mount TO-252
Mfr. Part # AUD034N04LA
Package TO-252
Model Number AUD034N04LA

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  1. Product Details
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Product Specification

Drain to Source Voltage 40V Current - Continuous Drain(Id) 125A
RDS(on) 2.9mΩ Operating Temperature - -
Gate Threshold Voltage (Vgs(th)) 1.7V Reverse Transfer Capacitance (Crss@Vds) 406pF@20V
Number 1 N-channel Input Capacitance(Ciss) 5.451nF@20V
Pd - Power Dissipation 105W Gate Charge(Qg) 156.7nC
Description N-Channel 40V 125A 105W Surface Mount TO-252 Mfr. Part # AUD034N04LA
Package TO-252 Model Number AUD034N04LA

Product Overview

The AUD034N04LA is a Silicon N-Channel MOSFET designed for automotive applications. It is suitable for single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. Key features include low drain-source on-resistance (RDS(ON) = 2.9m typ.), easy gate switching control, enhancement mode operation with a gate threshold voltage (Vth) of 1 to 2.3 V, and a high operating temperature of 175C. This MOSFET is AEC-Q101 qualified.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon N-Channel MOS
  • Color: Not specified
  • Certifications: AEC-Q101 qualified
  • Product Code: AUD034N04LA
  • Technology: Enhancement mode

Technical Specifications

Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 40 V VGS=0V, ID=250uA
Gate threshold voltage V(GS)th 1 - 2.3 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 1 uA VDS=40V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - 100 nA VGS=20V, VDS=0V
Drain-source on-state resistance RDS(on) 2.9 - 3.4 m VGS=10V, ID=20A, Tj=25C
Gate resistance (Intrinsic) RG - 1.1 f=1MHz, open drain
Continuous drain current ID - 125 A TC=25C (Limited by Tj,max. Maximum Duty Cycle D = 0.50)
Continuous drain current ID - 88 A TC=100C
Pulsed drain current ID,pulse - 375 A TC=25C (Pulse width tp limited by Tj,max)
Avalanche energy, single pulse EAS - 272 mJ Tc=25,VDD=50V, I=33A, L=0.5mH, RG=25
Avalanche current, single pulse IAR - 33 A Tc=25,VDD=50V,L=0.5mH, RG=25
Gate source voltage (static) VGS -20 - 20 V static
Power dissipation Ptot - 105 W TC=25C
Storage temperature Tstg -55 - 175 C
Operating junction temperature Tj -55 - 175 C
Soldering Temperature TL - 260 C Distance of 1.6mm from case for 10s
Transconductance GFS - 46.5 S VDS=5V IDS=10A
Thermal resistance, junction - case RthJC - 1.44 C/W
Thermal resistance, junction - ambient RthJA - 62 C/W device on PCB, minimal footprint
Input capacitance Ciss - 5451 pF VGS=0V, VDS=20V, f=1MHz
Output capacitance Coss - 484 pF VGS=0V, VDS=20V, f=1MHz
Reverse transfer capacitance Crss - 406 pF VGS=0V, VDS=20V, f=1MHz
Turn-on delay time td(on) - 20.8 ns VDD=25V,VGS=10V,ID=1A, RG=6
Rise time tr - 26.2 ns VDD=25V,VGS=10V,ID=1A, RG=6
Turn-off delay time td(off) - 213.1 ns VDD=25V,VGS=10V,ID=1A, RG=6
Fall time tf - 81.8 ns VDD=25V,VGS=10V,ID=1A, RG=6
Gate to source charge Qgs - 29.4 nC VDD=20V, ID=20A, VGS=0 to 10V
Gate to drain charge Qgd - 26 nC VDD=20V, ID=20A, VGS=0 to 10V
Gate charge total Qg - 156.7 nC VDD=20V, ID=20A, VGS=0 to 10V
Diode forward voltage VSD - 0.7 - 1.1 V VGS=0V, IF=10A, Tj=25C
Reverse recovery time trr - 31.2 ns VR=20V, IF=10A, diF/dt=100A/s
Reverse recovery charge Qrr - 32.1 nC VR=20V, IF=10A, diF/dt=100A/s

2409291603_ANHI-AUD034N04LA_C7494990.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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