Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 340mA |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Pd - Power Dissipation | 350mW |
| Input Capacitance(Ciss) | 40pF |
| Output Capacitance(Coss) | 30pF |
| Description | N-Channel 60V 340mA 350mW Surface Mount SOT-23 |
| Mfr. Part # | 2N7002K |
| Package | SOT-23 |
| Model Number | 2N7002K |
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Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 340mA |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | Pd - Power Dissipation | 350mW |
| Input Capacitance(Ciss) | 40pF | Output Capacitance(Coss) | 30pF |
| Description | N-Channel 60V 340mA 350mW Surface Mount SOT-23 | Mfr. Part # | 2N7002K |
| Package | SOT-23 | Model Number | 2N7002K |
The 2N7002K is an N-Channel MOSFET from Shenzhen Long Jing Micro-Electronics Co., Ltd., designed with a high-density cell structure for low RDS (ON) and serves as a voltage-controlled small signal switch. It is rugged, reliable, and offers high saturation current capability. This MOSFET is ESD protected up to 2KV and is suitable for various applications requiring efficient switching and low on-resistance. The device is encapsulated in a SOT-23 plastic package.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25C unless otherwise specified) | ||||||
| VDS | Drain-Source voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Drain Current | 340 | mA | |||
| PD | Power Dissipation | 350 | mW | |||
| RJA | Thermal Resistance from Junction to Ambient | 357 | °C/W | |||
| TJ | Junction Temperature | 150 | °C | |||
| TSTG | Storage Temperature | -55 | +150 | °C | ||
| Electrical Characteristics (Ta=25°C unless otherwise specified) | ||||||
| Static Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250µA | 60 | V | ||
| VGS(th) | Gate-Threshold Voltage* | VDS = VGS, ID = 250µA | 1 | 1.3 | 2.5 | V |
| lGSS | Gate Source leakage current | VDS = 0V, VGS = ±20V | ±10 | µA | ||
| VDS = 0V, VGS = ±10V | ±200 | nA | ||||
| VDS = 0V, VGS = ±5V | ±100 | nA | ||||
| IDSS | Zero Gate Voltage Drain Current | VDS = 48V, VGS = 0V | 1 | µA | ||
| RDS(on) | Drain-Source On-Resistance* | VGS = 4.5V, ID = 200mA | 2.1 | 5.3 | Ω | |
| VGS =10V, ID = 500mA | 1.7 | 5 | Ω | |||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 300mA | 1.5 | V | ||
| Qr | Recovered charge | VGS = 0V, IS = 300mA, VR = 25V, dls/dt = -100A/µS | 30 | nC | ||
| Dynamic Characteristics** | ||||||
| Ciss | Input Capacitance* | VGS = 0V VDS = 10V f = 1.0MHz | 40 | pF | ||
| Coss | Output Capacitance* | 30 | pF | |||
| Crss | Reverse Transfer Capacitance* | 10 | pF | |||
| Switching Characteristics** | ||||||
| td(on) | Turn-On Time | VGS=10V, VDD=50V, RG=50Ω, RGS=50Ω, RL=250Ω | 10 | ns | ||
| td(off) | Turn-Off Time | 15 | ns | |||
| trr | Reverse recovery Time | VGS=0V, IS=300mA, VR=25V, dls/dt=-100µA/µS | 30 | ns | ||
| BVGSO | Gate-Source Breakdown Voltage | Igs = ±1mA (Open Drain) | ±21.5 | ±30 | V | |
Notes:
*Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%.
**These parameters have no way to verify.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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