Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 650mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4.5V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.32pF@650V |
| Number | 1 N-channel |
| Pd - Power Dissipation | 25.5W |
| Input Capacitance(Ciss) | 438pF@650V |
| Gate Charge(Qg) | 11nC@10V |
| Description | N-Channel 650V 8A 25.5W Surface Mount TO-252-3 |
| Mfr. Part # | APJ14N65D |
| Package | TO-252-3 |
| Model Number | APJ14N65D |
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Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 650mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4.5V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.32pF@650V | Number | 1 N-channel |
| Pd - Power Dissipation | 25.5W | Input Capacitance(Ciss) | 438pF@650V |
| Gate Charge(Qg) | 11nC@10V | Description | N-Channel 650V 8A 25.5W Surface Mount TO-252-3 |
| Mfr. Part # | APJ14N65D | Package | TO-252-3 |
| Model Number | APJ14N65D |
The APJ14N65D is a 650V N-Channel Enhancement Mode MOSFET from the CoolFET II family, engineered with charge balance technology to deliver extremely low on-resistance and low gate charge performance. This MOSFET is ideal for applications demanding superior power density and outstanding efficiency, such as Uninterruptible Power Supplies (UPS) and Power Factor Correction (PFC) circuits.
| Model | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | Package | Description |
|---|---|---|---|---|---|
| APJ14N65D (AP65R650) | 650 (Type: 730) | 14 (IDM) | < 650 (Type: 560) | TO-252-3L | 650V N-Channel Enhancement Mode MOSFET |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | (VGS = 0V) | 650 | V | ||
| ID | Continuous Drain Current | (TC=25 unless otherwise noted) | 8 | A | ||
| IDM | Pulsed Drain Current | (note1) | 14 | A | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulse Avalanche Energy | (note2) | 125 | mJ | ||
| PD | Power Dissipation | (TC = 25C) | 25.5 | W | ||
| TJ, Tstg | Operating Junction and Storage Temperature Range | -55 | +150 | C | ||
| RthJC | Thermal Resistance, Junction-to-Case | 4.9 | C/W | |||
| RthJA | Thermal Resistance, Junction-to-Ambient | 49 | C/W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain to source breakdown voltage | VGS=0V, ID=250uA | 650 | 700 | V | |
| BVDSS / TJ | Breakdown voltage temperature coefficient | ID=250uA, referenced to 25oC | 0.7 | V/oC | ||
| IDSS | Drain to source leakage current | VDS=650V, VGS=0V | 1 | uA | ||
| IDSS | Drain to source leakage current | VDS=520V, TC=125oC | 50 | uA | ||
| IGSS | Gate to source leakage current, forward | VGS=30V, VDS=0V | 100 | nA | ||
| IGSS | Gate to source leakage current, reverse | VGS=-30V, VDS=0V | -100 | nA | ||
| VGS(TH) | Gate threshold voltage | VDS=VGS, ID=250uA | 2.5 | 3.3 | 4.5 | V |
| RDS(ON) | Drain to source on state resistance | VGS=10V, ID =3.2A | 560 | 650 | m | |
| Ciss | Input capacitance | VGS=0V, VDS=100V, f=1MHz | 438 | pF | ||
| Coss | Output capacitance | VGS=0V, VDS=100V, f=1MHz | 19.5 | pF | ||
| Crss | Reverse transfer capacitance | VGS=0V, VDS=100V, f=1MHz | 1.32 | pF | ||
| td(on) | Turn on delay time | VDS=400V, ID=3.2A RG=4.7 , VGS=10V | 84.8 | ns | ||
| tr | Rising time | VDS=400V, ID=3.2A RG=4.7 , VGS=10V | 25.2 | ns | ||
| td(off) | Turn off delay time | VDS=400V, ID=3.2A RG=4.7 , VGS=10V | 227.6 | ns | ||
| tf | Fall time | VDS=400V, ID=3.2A RG=4.7 , VGS=10V | 26.8 | ns | ||
| Qg | Total gate charge | VDS=480V, VGS=10V, ID=3.2A | 11 | nC | ||
| Qgs | Gate-source charge | VDS=480V, VGS=10V, ID=3.2A | 2.1 | -- | ||
| Qgd | Gate-drain charge | VDS=480V, VGS=10V, ID=3.2A | 5.6 | -- | ||
| IS | Continuous source current | Integral reverse p-n Junction diode in the MOSFET | 11 | A | ||
| ISM | Pulsed source current | 44 | A | |||
| VSD | Diode forward voltage drop. | IS=3.2A, VGS=0V | 0.7 | 1.5 | V | |
| Trr | Reverse recovery time | IS=3.2A, VGS=0V, Vdd=400V, dIF/dt=100A/us | 313 | ns | ||
| Qrr | Reverse recovery Charge | IS=3.2A, VGS=0V, Vdd=400V, dIF/dt=100A/us | 0.877 | uC | ||
| Package Mechanical Data: TO-252-3L Dimensions | |||
|---|---|---|---|
| Ref | Min. | Typ. | Max. |
| A | 2.10 | ||
| A2 | 0 | 0.66 | |
| B | 0.40 | 2.50 | |
| C | 0.10 | 0.86 | |
| D | 0.60 | ||
| E | 0.083 | 0 | 0.026 |
| G | 0.016 | 0.098 | 0.004 |
| H | 0.034 | 0.024 | |
| L | 6.40 | 9.50 | 10.70 |
| V1 | 0.374 | 0.421 | 0.053 |
| V2 | 0.065 | 5.90 | 6.30 |
| L2 | 0 | 6 | 7 |
| B2 | 5.18 | 5.48 | 0.202 |
| C2 | 0.44 | 0.58 | 0.017 |
| D1 | 5.30REF | ||
| E1 | 4.63 | 0.182 | 0.209REF |
| Reel Spectification-TO-252 Dimensions | |||
|---|---|---|---|
| Ref | Min. | Typ. | Max. |
| W | 15.90 | 1.65 | 7.40 |
| E | 1.40 | 16.10 | 1.85 |
| F | 7.60 | 1.60 | 0.626 |
| D0 | 0.065 | 0.291 | 0.055 |
| D1 | 0.634 | 0.073 | 0.299 |
| P0 | 0.063 | 1.40 | 1.60 |
| P1 | 7.90 | 10.45 | 10.60 |
| P2 | 0.411 | 0.417 | 0.053 |
| A0 | 0.065 | 0.24 | 0.27 |
| B0 | 0.009 | 0.011 | 0.055 |
| K0 | 0.063 | 3.90 | 4.10 |
| T | 6.90 | 0.271 | 10P0 |
| t1 | 0.154 | 0.161 | 8.10 |
Note:
Copyright: APM-Microelectronice
Edition Date: 2018/1/31
Version: Rve1.0
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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