Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | - |
| RDS(on) | 90mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 900mV@250uA |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| Output Capacitance(Coss) | 290pF |
| Pd - Power Dissipation | 350mW |
| Input Capacitance(Ciss) | 740pF |
| Gate Charge(Qg) | 15nC@4.5V |
| Description | P-Channel 20V 6A 0.35W Surface Mount SOT-23 |
| Mfr. Part # | SI2305 |
| Package | SOT-23 |
| Model Number | SI2305 |
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Product Specification
| Drain to Source Voltage | 20V | Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | - | RDS(on) | 90mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 900mV@250uA | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | Output Capacitance(Coss) | 290pF |
| Pd - Power Dissipation | 350mW | Input Capacitance(Ciss) | 740pF |
| Gate Charge(Qg) | 15nC@4.5V | Description | P-Channel 20V 6A 0.35W Surface Mount SOT-23 |
| Mfr. Part # | SI2305 | Package | SOT-23 |
| Model Number | SI2305 |
The SI2305 is a P-Channel MOSFET in a SOT-23 plastic-encapsulated package, designed for load switching in portable devices and DC/DC converters. It features TrenchFET Power MOSFET technology, offering efficient power management capabilities.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25C unless otherwise specified) | ||||||
| VDSS | Drain-Source voltage | -20 | V | |||
| VGSS | Gate-Source voltage | 12 | V | |||
| ID | Continuous Drain Current | -6.0 | A | |||
| IS | Continuous Source-Drain Diode Current | -0.8 | A | |||
| PD | Maximum Power Dissipation | 0.35 | W | |||
| RJA | Thermal Resistance from Junction to Ambient (t10s) | 357 | C/W | |||
| TJ | Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature | -50 | ~+150 | C | ||
| Electrical Characteristics (TJ=25C unless otherwise specified) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250A | -20 | V | ||
| VGS(th) | Gate-Threshold Voltage | VDS = VGS, ID = -250A | -0.5 | -0.9 | V | |
| lGSS | Gate-body Leakage current | VDS = 0V, VGS = 12V | 100 | nA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -20V, VGS = 0V | -1 | A | ||
| RDS(on) | Drain-Source On-Resistance | VGS = -4.5V, ID = -3.5A | 30 | 45 | m | |
| VGS = -2.5V, ID = -3.0A | 40 | 60 | m | |||
| VGS = -1.8V, ID = -2.0A | 60 | 90 | m | |||
| gfs | Forward Trans conductance | VDS = -5V, ID = -4.1A | 6 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = -4V, f = 1.0MHz | 740 | pF | ||
| Coss | Output Capacitance | VGS = 0V, VDS = -4V, f = 1.0MHz | 290 | pF | ||
| Crss | Reverse Transfer Capacitance | VGS = 0V, VDS = -4V, f = 1.0MHz | 190 | pF | ||
| Qg | Total Gate Charge | VDS = -4V,VGS = -4.5V, ID = -4.1A | 7.8 | 15 | nC | |
| Qgs | Gate-Source Charge | VDS = -4V,VGS = -2.5V,ID = -4.1A | 1.2 | nC | ||
| Qgd | Gate-Drain Charge | VDS = -4V,VGS = -2.5V,ID = -4.1A | 1.6 | nC | ||
| Rg | Gate resistance | f =1MHz | 1.4 | 7 | ||
| td(on) | Turn-On Delay Time | VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -4.5V,Rg = 1 | 13 | 20 | ns | |
| VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -8V,Rg = 1 | 5 | 10 | ns | |||
| tr | Rise Time | VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -4.5V,Rg = 1 | 35 | 53 | ns | |
| VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -8V,Rg = 1 | 11 | 17 | ns | |||
| td(off) | Turn-Off Delay Time | VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -4.5V,Rg = 1 | 32 | 48 | ns | |
| VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -8V,Rg = 1 | 22 | 33 | ns | |||
| tf | Fall Time | VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -4.5V,Rg = 1 | 10 | 20 | ns | |
| VDD = -4V,RL = 1.2, ID -3.3A, VGEN = -8V,Rg = 1 | 16 | 24 | ns | |||
| Drain-Source Body Diode Characteristics | ||||||
| IS | Continuous Source-Drain Diode Current | TC = 25C | -1.4 | A | ||
| ISM | Pulsed Diode Forward Current | -10 | A | |||
| VSD | Body diode voltage | IF = -3.3A | -1.2 | V | ||
Note:
Soldering Parameters:
Reflow Condition Pb Free assembly
| Parameter | Min | Max | Unit |
|---|---|---|---|
| Pre Heat Temperature (Ts(min)) | 150 | C | |
| Temperature (Ts(max)) | 200 | C | |
| Time (min to max) (ts ) | 60 | 190 | secs |
| Average ramp up rate (Liquidus Temp) (TL) to peak | 5C/second | ||
| Reflow Temperature (TL) (Liquidus) | 217 | C | |
| Time (tL) | 60 | 150 | seconds |
| Temperature (tp ) | 260+0/-5 | C | |
| Time within actual peak Temperature (tp ) | 20 | 40 | seconds |
| Ramp-down Rate | 5C/second | max | |
| Time 25C to peak Temperature (TP) | 8 | minutes Max. |
Note: Do not exceed 280C
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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