| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 13mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 237pF |
| Number | 1 P-Channel |
| Output Capacitance(Coss) | 310pF |
| Input Capacitance(Ciss) | 2.215nF |
| Pd - Power Dissipation | 45W |
| Gate Charge(Qg) | 22nC@4.5V |
| Description | P-Channel 30V 50A 45W Surface Mount DFN-8(5x6) |
| Mfr. Part # | AP50P03NF |
| Package | DFN-8(5x6) |
| Model Number | AP50P03NF |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 13mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 237pF | Number | 1 P-Channel |
| Output Capacitance(Coss) | 310pF | Input Capacitance(Ciss) | 2.215nF |
| Pd - Power Dissipation | 45W | Gate Charge(Qg) | 22nC@4.5V |
| Description | P-Channel 30V 50A 45W Surface Mount DFN-8(5x6) | Mfr. Part # | AP50P03NF |
| Package | DFN-8(5x6) | Model Number | AP50P03NF |
The AP50P03NF is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This MOSFET is ideally suited for battery protection and other switching applications, including wireless impact and mobile phone fast charging.
| Parameter | Rating | Unit | Conditions |
|---|---|---|---|
| Drain-Source Voltage (VDS) | -30 | V | VGS=0V |
| Gate-Source Voltage (VGS) | ±25 | V | |
| Continuous Drain Current (ID) @ TC=25 | -50 | A | VGS @ -10V |
| Continuous Drain Current (ID) @ TC=100 | -30 | A | VGS @ -10V |
| Continuous Drain Current (ID) @ TA=25 | -9.6 | A | VGS @ -10V |
| Continuous Drain Current (ID) @ TA=70 | -7.7 | A | VGS @ -10V |
| Pulsed Drain Current (IDM) | -150 | A | |
| Single Pulse Avalanche Energy (EAS) | 125 | mJ | |
| Avalanche Current (IAS) | -50 | A | |
| Total Power Dissipation (PD) @ TC=25 | 45 | W | |
| Total Power Dissipation (PD) @ TA=25 | 2.0 | W | |
| Storage Temperature Range (TSTG) | -55 to 150 | ||
| Operating Junction Temperature Range (TJ) | -55 to 150 | ||
| Thermal Resistance Junction-Ambient (RJA) | 62 | /W | (t ≤10s) |
| Thermal Resistance Junction-Ambient (RJA) | 25 | /W | |
| Thermal Resistance Junction-Case (RJC) | 2.8 | /W | |
| Drain-Source Breakdown Voltage (BVDSS) | -30 to -33 | V | VGS=0V , ID=-250uA |
| Static Drain-Source On-Resistance (RDS(ON)) | 9 to 13 | m | VGS=-10V , ID=-12A |
| Static Drain-Source On-Resistance (RDS(ON)) | 14 to 20 | m | VGS=-4.5V , ID=-8A |
| Gate Threshold Voltage (VGS(th)) | -1.0 to -2.5 | V | VGS=VDS , ID =-250uA |
| Drain-Source Leakage Current (IDSS) | ≤ -1 | µA | VDS=-24V , VGS=0V , TJ=25 |
| Drain-Source Leakage Current (IDSS) | ≤ -5 | µA | VDS=-24V , VGS=0V , TJ=55 |
| Gate-Source Leakage Current (IGSS) | ≤ ±100 | nA | VGS=±25V , VDS=0V |
| Forward Transconductance (gfs) | 30 | S | VDS=-5V , ID=-30A |
| Gate Resistance (Rg) | 9 | Ω | VDS=0V , VGS=0V , f=1MHz |
| Total Gate Charge (Qg) | 22 | nC | VDS=-15V , VGS=-4.5V , ID=-15A |
| Gate-Source Charge (Qgs) | 8.7 | nC | |
| Gate-Drain Charge (Qgd) | 7.2 | nC | |
| Turn-On Delay Time (Td(on)) | 8 | ns | VDD=-15V , VGS=-10V , RG=3.3Ω ID=-15A |
| Rise Time (Tr) | 73.7 | ns | |
| Turn-Off Delay Time (Td(off)) | 61.8 | ns | |
| Fall Time (Tf) | 24.4 | ns | |
| Input Capacitance (Ciss) | 2215 | pF | VDS=-15V , VGS=0V , f=1MHz |
| Output Capacitance (Coss) | 310 | pF | |
| Reverse Transfer Capacitance (Crss) | 237 | pF | |
| Continuous Source Current (IS) | -45 | A | VG=VD=0V , Force Current |
| Pulsed Source Current (ISM) | -150 | A | |
| Diode Forward Voltage (VSD) | -1 | V | VGS=0V , IS=-1A , TJ=25 |
| Reverse Recovery Time (trr) | 19 | ns | IF=-15A , dI/dt=100A/µs , TJ=25 |
| Reverse Recovery Charge (Qrr) | 9 | nC | |
| Package Type | PDFN5*6-8L |
| Symbol | Description | Min (mm) | Max (mm) | Min (Inch) | Max (Inch) |
|---|---|---|---|---|---|
| A | 1.03 | 1.17 | 0.0406 | 0.0461 | |
| b | 0.34 | 0.48 | 0.0134 | 0.0189 | |
| c | 0.824 | 0.0970 | 0.0324 | 0.082 | |
| D | 4.80 | 5.40 | 0.1890 | 0.2126 | |
| D1 | 4.11 | 4.31 | 0.1618 | 0.1697 | |
| D2 | 4.80 | 5.00 | 0.1890 | 0.1969 | |
| E | 5.95 | 6.15 | 0.2343 | 0.2421 | |
| E1 | 5.65 | 5.85 | 0.2224 | 0.2303 | |
| E2 | 1.60 | / | 0.0630 | / | |
| e | 1.27 BSC | 0.05 BSC | |||
| L | 0.05 | 0.25 | 0.0020 | 0.0098 | |
| L1 | 0.38 | 0.50 | 0.0150 | 0.0197 | |
| L2 | 0.38 | 0.50 | 0.0150 | 0.0197 | |
| H | 3.30 | 3.50 | 0.1299 | 0.1378 | |
| I | / | 0.18 | / | 0.0070 |
| Product ID | Pack | Marking | Qty (PCS) |
|---|---|---|---|
| AP50P03NF | PDFN5*6-8L | AP50P03NF XXX YYYY | 5000 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!