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Hefei Purple Horn E-Commerce Co., Ltd.

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China Low gate charge N Channel Enhancement Mode MOSFET A Power microelectronics
China Low gate charge N Channel Enhancement Mode MOSFET A Power microelectronics

  1. China Low gate charge N Channel Enhancement Mode MOSFET A Power microelectronics

Low gate charge N Channel Enhancement Mode MOSFET A Power microelectronics

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Drain to Source Voltage 30V
Current - Continuous Drain(Id) 80A
RDS(on) 6mΩ@10V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 180pF
Number 1 N-channel
Output Capacitance(Coss) 200pF
Pd - Power Dissipation 54W
Input Capacitance(Ciss) 1.16nF
Gate Charge(Qg) 11.1nC@4.5V
Description N-Channel 30V 80A 54W Surface Mount TO-252-3
Mfr. Part # AP80N03D
Package TO-252-3
Model Number AP80N03D

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Product Specification

Drain to Source Voltage 30V Current - Continuous Drain(Id) 80A
RDS(on) 6mΩ@10V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 180pF Number 1 N-channel
Output Capacitance(Coss) 200pF Pd - Power Dissipation 54W
Input Capacitance(Ciss) 1.16nF Gate Charge(Qg) 11.1nC@4.5V
Description N-Channel 30V 80A 54W Surface Mount TO-252-3 Mfr. Part # AP80N03D
Package TO-252-3 Model Number AP80N03D

Product Overview

The AP80N03D is a 30V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is well-suited for battery protection and other switching applications.

Product Attributes

  • Brand: APM Microelectronics (implied by context)
  • Product ID: AP80N03D
  • Technology: Advanced Trench Technology
  • Channel Type: N-Channel
  • Mode: Enhancement Mode

Technical Specifications

Parameter Conditions Min. Typ. Max. Unit
General Features
VDS 30 V
ID 80 A
RDS(ON) VGS=10V 4.8 6 m
RDS(ON) VGS=4.5V 6.5 9 m
Absolute Maximum Ratings (TC=25 unless otherwise noted)
VDS 30 V
VGS 20 V
ID (Continuous, TC=25) 80 A
ID (Continuous, TC=100) 51 A
IDM (Pulsed) 320 A
EAS (Single Pulse Avalanche Energy) 88 mJ
IAS (Single Pulse Avalanche Current) 42 A
PD (Power Dissipation, TC=25) 54 W
PD (Derate above 25) 0.43 W/
TSTG (Storage Temperature Range) -55 150
TJ (Operating Junction Temperature Range) -55 150
RJA (Thermal Resistance Junction to Ambient) 62 /W
RJC (Thermal Resistance Junction to Case) 2.3 /W
Electrical Characteristics (TJ=25, unless otherwise noted)
BVDSS (Drain-Source Breakdown Voltage) VGS=0V, ID=250uA 30 V
IDSS (Drain-Source Leakage Current) VDS=30V, VGS=0V, TJ=25 1 uA
IDSS (Drain-Source Leakage Current) VDS=24V, VGS=0V, TJ=125 10 uA
IGSS (Gate-Source Leakage Current) VGS=20V, VDS=0V 100 nA
RDS(ON) (Static Drain-Source On-Resistance) VGS=10V, ID=20A 4.8 6 m
RDS(ON) (Static Drain-Source On-Resistance) VGS=4.5V, ID=10A 6.5 9 m
VGS(th) (Gate Threshold Voltage) VGS=VDS, ID=250uA 1 1.6 2.5 V
gfs (Forward Transconductance) VDS=10V, ID=10A 18 S
Qg (Total Gate Charge) VDS=15V, VGS=4.5V, ID=20A 11.1 nC
Td(on) (Turn-On Delay Time) VDD=15V, VGS=10V, RG=3.3, ID=15A 7.5 ns
Tr (Rise Time) 14.5 ns
Td(off) (Turn-Off Delay Time) 35.2 ns
Tf (Fall Time) 9.6 ns
Ciss (Input Capacitance) VDS=25V, VGS=0V, F=1MHz 1160 pF
Coss (Output Capacitance) VGS=0V, VDS=0V, F=1MHz 200 pF
Crss (Reverse Transfer Capacitance) 180 pF
Rg (Gate resistance) 2.5
EAS (Single Pulse Avalanche Energy) VDD=25V, L=0.1mH, IAS=20A 20 mJ
IS (Continuous Source Current) VG=VD=0V, Force Current 80 A
ISM (Pulsed Source Current) 320 A
VSD (Diode Forward Voltage) VGS=0V, IS=1A, TJ=25 1 V
Applications
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID Pack Marking Qty(PCS)
AP80N03D TO-252-3L AP80N03D XXX YYYY 2500

Package Mechanical Data (TO-252)

Ref Min. Typ. Max. Inches Min. Inches Typ. Inches Max.
A 2.10 0.083
A2 0 0.66 0 0.026
B 0.40 2.50 0.016 0.098
C 0.10 0.86 0.004 0.034
D 0.60 0.024
E 6.40 9.50 10.70 0.252 0.374 0.421
G 0.374 0.421 0.015 0.017
H 5.90 6.30 0.232 0.248
L 6.80 0.268
V1 4.47 4.67 0.176 0.184
V2 1.09 1.21 0.043 0.048
L2 1.35 1.65 0.053 0.065
B2 5.18 5.48 0.204 0.216
C2 0.44 0.58 0.017 0.023
D1 5.30 0.209
E1 4.63 0.182

Reel Specification - TO-252

Ref Min. Typ. Max. Inches Min. Inches Typ. Inches Max.
W 15.90 16.10 0.626 0.634
E 1.65 1.85 0.065 0.073
F 7.40 7.60 0.291 0.299
D0 1.40 1.60 0.055 0.063
D1 16.10 0.634
P0 7.90 10.45 10.60 0.311 0.411 0.417
P1 10.45 10.55 10.60 0.411 0.415 0.417
P2 1.65 1.75 0.065 0.069
A0 1.40 1.60 0.055 0.063
B0 2.40 2.70 0.094 0.106
K0 6.90 7.10 0.272 0.280
T 1.90 2.10 0.075 0.083
t1 0.10 0.004

2410121532_A-Power-microelectronics-AP80N03D_C3011283.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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