| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| RDS(on) | 2.4Ω@10V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10.9pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 69.5pF |
| Pd - Power Dissipation | 36W |
| Input Capacitance(Ciss) | 580pF |
| Gate Charge(Qg) | 15nC@10V |
| Description | N-Channel 650V 4A 36W Surface Mount TO-252-3L |
| Mfr. Part # | AP4N65D |
| Package | TO-252-3L |
| Model Number | AP4N65D |
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Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 4A |
| RDS(on) | 2.4Ω@10V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10.9pF | Number | 1 N-channel |
| Output Capacitance(Coss) | 69.5pF | Pd - Power Dissipation | 36W |
| Input Capacitance(Ciss) | 580pF | Gate Charge(Qg) | 15nC@10V |
| Description | N-Channel 650V 4A 36W Surface Mount TO-252-3L | Mfr. Part # | AP4N65D |
| Package | TO-252-3L | Model Number | AP4N65D |
The AP4N65D/Y is a 650V N-Channel Enhancement Mode VDMOSFET manufactured using a self-aligned planar technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is suitable for various power switching circuits, including Uninterruptible Power Supplies (UPS) and Power Factor Correction (PFC) applications.
| Model | VDS (V) | ID (A) | RDS(ON) () @ VGS=10V | Package | Pack Marking | Qty (PCS) |
|---|---|---|---|---|---|---|
| AP4N65D | 650 | 4 | < 2.4 | TO-252-3L | AP4N65D XXX YYYY | 2500 |
| AP4N65Y | 650 | 4 | < 2.4 | TO-251-3L | AP4N65Y XXX YYYY | 1000 |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage (VGS = 0V) | VDSS | 650 | V |
| Continuous Drain Current | ID | 4 | A |
| Pulsed Drain Current (note1) | IDM | 16 | A |
| Gate-Source Voltage | VGSS | ±30 | V |
| Single Pulse Avalanche Energy (note2) | EAS | 160 | mJ |
| Avalanche Current (note1) | IAR | 4 | A |
| Repetitive Avalanche Energy (note1) | EAR | 20 | mJ |
| Power Dissipation (TC = 25C) | PD | 36 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | C |
| Thermal Resistance, Junction-to-Case | RthJC | 3.47 | K/W |
| Thermal Resistance, Junction-to-Ambient | RthJA | 62.5 | K/W |
| Parameter | Symbol | Test Conditions | Min. | Type | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 650 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 650V, VGS = 0V, TJ = 25ºC | -- | -- | 1 | µA |
| Gate-Source Leakage | IGSS | VGS = ±30V | -- | -- | ±100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 3.0 | -- | 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 2.0A (Note3) | -- | 2 | 2.4 | Ω |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 580 | -- | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 69.5 | -- | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1.0MHz | -- | 10.9 | -- | pF |
| Total Gate Charge | Qg | VDD = 520V, ID = 4.0A, VGS = 10V | -- | 15 | -- | nC |
| Gate-Source Charge | Qgs | VDD = 520V, ID = 4.0A, VGS = 10V | -- | 2.5 | -- | nC |
| Gate-Drain Charge | Qgd | VDD = 520V, ID = 4.0A, VGS = 10V | -- | 7.5 | -- | nC |
| Turn-on Delay Time | td(on) | VDD = 400V, ID =4.0A, RG = 25 Ω | -- | 12 | -- | ns |
| Turn-on Rise Time | tr | VDD = 400V, ID =4.0A, RG = 25 Ω | -- | 22 | -- | ns |
| Turn-off Delay Time | td(off) | VDD = 400V, ID =4.0A, RG = 25 Ω | -- | 50 | -- | ns |
| Turn-off Fall Time | tf | VDD = 400V, ID =4.0A, RG = 25 Ω | -- | 48 | -- | ns |
| Continuous Body Diode Current | IS | TC = 25 ºC | -- | -- | 4 | A |
| Pulsed Diode Forward Current | ISM | TC = 25 ºC | -- | -- | 16 | A |
| Body Diode Voltage | VSD | TJ = 25ºC, ISD = 4.0A, VGS = 0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | trr | VGS = 0V, IS = 4.0A, diF/dt =100A /µs | -- | 250 | -- | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V, IS = 4.0A, diF/dt =100A /µs | -- | 3.5 | -- | µC |
| Ref | Min. | Typ. | Max. | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Millimeters | Millimeters | Millimeters | Inches | Inches | Inches | |
| A | 2.10 | 0.083 | ||||
| A2 | 0.66 | 0.026 | ||||
| B | 0.40 | 0.60 | 0.016 | 0.024 | ||
| C | 2.50 | 0.098 | ||||
| D | 0.10 | 0.004 | ||||
| E | 0.86 | 0.034 | ||||
| G | 0.60 | 0.024 | ||||
| H | 6.40 | 9.50 | 10.70 | 0.252 | 0.374 | 0.421 |
| L | 5.90 | 6.30 | 0.232 | 0.248 | ||
| L2 | 0° 6° 7° | 0° 6° 7° | ||||
| V1 | 4.47 | 4.67 | 0.176 | 0.184 | ||
| V2 | 1.09 | 1.21 | 0.043 | 0.048 |
| Ref | Min. | Typ. | Max. | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Millimeters | Millimeters | Millimeters | Inches | Inches | Inches | |
| W | 15.90 | 16.10 | 0.626 | 0.634 | ||
| E | 1.65 | 1.85 | 0.065 | 0.073 | ||
| F | 7.40 | 7.60 | 0.291 | 0.299 | ||
| D0 | 1.40 | 1.60 | 0.055 | 0.063 | ||
| D1 | 1.60 | 0.063 | ||||
| P0 | 7.90 | 8.10 | 0.311 | 0.319 | ||
| P1 | 10.45 | 10.60 | 0.411 | 0.417 | ||
| P2 | 2.78 | 0.109 | ||||
| A0 | 1.40 | 1.60 | 0.055 | 0.063 | ||
| B0 | 3.90 | 4.10 | 0.154 | 0.161 | ||
| K0 | 6.90 | 7.00 | 0.271 | 0.276 | ||
| T | 0.10 | 0.004 | ||||
| t1 | 0.10 | 0.004 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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