Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 136A |
| RDS(on) | 5.3mΩ |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 15.3pF@50V |
| Number | 1 N-channel |
| Pd - Power Dissipation | 161W |
| Input Capacitance(Ciss) | 3.864nF@50V |
| Gate Charge(Qg) | 63.7nC |
| Description | N-Channel 100V 136A 161W Surface Mount TO-263 |
| Mfr. Part # | AUB056N10 |
| Package | TO-263 |
| Model Number | AUB056N10 |
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Product Specification
| Drain to Source Voltage | 100V | Current - Continuous Drain(Id) | 136A |
| RDS(on) | 5.3mΩ | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | Reverse Transfer Capacitance (Crss@Vds) | 15.3pF@50V |
| Number | 1 N-channel | Pd - Power Dissipation | 161W |
| Input Capacitance(Ciss) | 3.864nF@50V | Gate Charge(Qg) | 63.7nC |
| Description | N-Channel 100V 136A 161W Surface Mount TO-263 | Mfr. Part # | AUB056N10 |
| Package | TO-263 | Model Number | AUB056N10 |
The AUN053N10, AUB056N10, and AUP056N10 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are particularly suited for synchronous rectification in Switch Mode Power Supplies (SMPS), as well as hard switching and high-speed DC/DC converters in telecommunications and industrial sectors. Key features include low drain-source on-resistance (RDS(ON)) across various packages (DFN5X6, TO263, TO220), high-speed power switching capability, enhanced body diode dv/dt capability, and improved avalanche ruggedness.
| Model | Package | Marking | VDS @ Tj,max (V) | RDS(on),max DFN5X6 (m) | RDS(on),max TO263 (m) | RDS(on),max TO220 (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|---|---|
| AUN053N10 | DFN5x6 | AUN053N10 | 100 | 5.3 | - | - | 60.7 | 399 |
| AUB056N10 | TO263 | AUB056N10 | 100 | - | 5.6 | - | 60.7 | 399 |
| AUP056N10 | TO220 | AUP056N10 | 100 | - | - | 5.6 | 60.7 | 399 |
| Parameter | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Continuous drain current | ID | 136 | A | TC=25C, Limited by Tj,max, D = 0.50 |
| Continuous drain current | ID | 101 | A | TC=100C, Limited by Tj,max, D = 0.50 |
| Pulsed drain current | ID,pulse | 399 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 282 | mJ | Tc=25,VDD=50V,Id=33.6A, L=0.5mH, RG=25 |
| Avalanche current, single pulse | IAR | 33.6 | A | Tc=25, VDD=50V, L=0.5mH, RG=25 |
| Gate source voltage (static) | VGS | -20 to 20 | V | static |
| Power dissipation (DFN5x6) | Ptot | 151 | W | TC=25C |
| Power dissipation (TO263,TO220) | Ptot | 161 | W | TC=25C |
| Storage temperature | Tstg | -55 to 150 | C | |
| Operating junction temperature | Tj | -55 to 150 | C | |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Thermal resistance, junction - case (TO263&TO220) | RthJC | 0.78 | C/W | |
| Thermal resistance, junction - ambient (TO263&TO220) | RthJA | 62 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (DFN5X6) | RthJC | 0.85 | C/W | |
| Thermal resistance, junction - ambient (DFN5X6) | RthJA | 50 | C/W | device on PCB, minimal footprint |
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.5 to 4.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=95V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance (DFN5X6) | RDS(on) | 4.6 to 5.3 | m | VGS=10V, ID=20A, Tj=25C |
| Drain-source on-state resistance (TO263,TO220) | RDS(on) | 4.8 to 5.6 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | 1.5 | f=1MHz, open drain | |
| Transconductance | GFS | 53 | S | VDS=5V IDS=20A |
| Input capacitance | Ciss | 3864 | pF | VGS=0V, VDS=50V, f=1MHz |
| Output capacitance | Coss | 379 | pF | VGS=0V, VDS=50V, f=1MHz |
| Reverse transfer capacitance | Crss | 15.3 | pF | VGS=0V, VDS=50V, f=1MHz |
| Turn-on delay time | td(on) | 30.5 | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Rise time | tr | 57 | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Turn-off delay time | td(off) | 72 | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Fall time | tf | 45 | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Gate to source charge | Qgs | 16.2 | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 18.5 | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate charge total | Qg | 63.7 | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.7 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 47 | ns | VR=30V, IF=20A, diF/dt=300A/s |
| Reverse recovery charge | Qrr | 221 | nC | VR=30V, IF=20A, diF/dt=300A/s |
| Peak reverse recovery current | Irrm | 8.8 | A | VR=30V, IF=20A, diF/dt=300A/s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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