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Hefei Purple Horn E-Commerce Co., Ltd.

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China P Channel MOSFET ALJ SI2301 designed for battery powered systems portable
China P Channel MOSFET ALJ SI2301 designed for battery powered systems portable

  1. China P Channel MOSFET ALJ SI2301 designed for battery powered systems portable

P Channel MOSFET ALJ SI2301 designed for battery powered systems portable

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Drain to Source Voltage 20V
Current - Continuous Drain(Id) 2.5A
RDS(on) 150mΩ@2.5V
Gate Threshold Voltage (Vgs(th)) 1V@250uA
Type P-Channel
Reverse Transfer Capacitance (Crss@Vds) 25pF
Input Capacitance(Ciss) 381pF
Output Capacitance(Coss) 49pF
Pd - Power Dissipation 400mW
Gate Charge(Qg) 5.6nC@4.5V
Description P-Channel 20V 2.5A 0.4W Surface Mount SOT-23
Mfr. Part # SI2301
Package SOT-23
Model Number SI2301

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  1. Product Details
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Product Specification

Drain to Source Voltage 20V Current - Continuous Drain(Id) 2.5A
RDS(on) 150mΩ@2.5V Gate Threshold Voltage (Vgs(th)) 1V@250uA
Type P-Channel Reverse Transfer Capacitance (Crss@Vds) 25pF
Input Capacitance(Ciss) 381pF Output Capacitance(Coss) 49pF
Pd - Power Dissipation 400mW Gate Charge(Qg) 5.6nC@4.5V
Description P-Channel 20V 2.5A 0.4W Surface Mount SOT-23 Mfr. Part # SI2301
Package SOT-23 Model Number SI2301

Product Overview

The SI2301 is a P-Channel logic enhancement mode power MOSFET manufactured using high cell density, DMOS trench technology. This advanced design is optimized to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is ideal for power management applications in notebooks, portable equipment, battery-powered systems, load switches, and DSCs.

Product Attributes

  • Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.
  • Product Line: SOT-23 Plastic-Encapsulate MOSFETS
  • Model: SI2301
  • Channel Type: P-Channel
  • Technology: Logic Enhancement Mode, High Cell Density DMOS Trench Technology
  • Marking: A1SHB

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit
Features
VDS Drain-source voltage -20 V
ID Continuous drain current -2.5 A
RDS(ON) Drain-Source on-state resistance VGS = -2.5 V, ID = -2A 110 150 m
RDS(ON) Drain-Source on-state resistance VGS = -4.5 V, ID = -2.5A 90 110 m
Maximum Ratings (Ta=25 C unless otherwise noted)
VDS Drain-source voltage -20 V
VGS Gate-source voltage 8 V
ID Continuous drain current -2.5 A
IDM Pulsed Drain Current 1) -13 A
PD Power dissipation 0.4 W
TJ Operating Junction temperature 150 C
Tstg Storage temperature -55 150 C
Thermal Characteristic
RJA Thermal Resistance from Junction to Ambient 2) (t 5s) 312.5 C /W
RJC Thermal Resistance from Junction to Case 30 C /W
Electrical Characteristics (Ta=25 C unless otherwise noted)
Off Characteristics
V(BR)DSS Drain- source breakdown voltage VGS = 0 V, ID = -250uA -20 V
IDSS Zero gate voltage drain current VDS = -20 V, VGS = 0 V -1 A
IGSS Gate-body leakage current VGS = 8V, VDS = 0 V 100 nA
On Characteristics
VGS(th) Gate threshold voltage VGS=VDS, ID = -250uA -0.4 -1 V
RDS(on) Drain-Source on-state resistance VGS = -4.5 V, ID = -2.5A 90 110 m
RDS(on) Drain-Source on-state resistance VGS = -2.5 V, ID = -2A 110 150 m
Dynamic Characteristics
Ciss Input capacitance VGS = 0 V, VDS = -15V, f = 1 MHz 381 pF
Coss Output capacitance 49 pF
Crss Reverse transfer capacitance 25 pF
Switching Characteristics
td(on) Turn-on delay time VDS = -6V, RL = 6 RGEN = 6, VGS = -4.5V 61.6 ns
tr Rise time 23.1 ns
td(off) Turn-off delay time 47.6 ns
tf Fall time 7.9 ns
Total Gate Charge
Qg Total gate charge VDS = -6V, VGS = -4.5V, ID = -2.5A 5.6 nC
Qgs Gate-source charge 2.4 nC
Qgd Gate-drain charge 1.3 nC
Drain-source body diode characteristics
VSD Diode forward voltage 3) VGS = 0 V, IS = -1A -0.7 -1.4 V

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. The value of RJA is measured with the device mounted on 1 in FR-4 board in a still air environment with Ta=25.

3. Diode forward voltage.


2410121447_ALJ-SI2301_C22400356.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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