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Hefei Purple Horn E-Commerce Co., Ltd.

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China Silicon N Channel MOSFET ANHI ASA70R600E optimized for in LCD PDP TVs and power
China Silicon N Channel MOSFET ANHI ASA70R600E optimized for in LCD PDP TVs and power

  1. China Silicon N Channel MOSFET ANHI ASA70R600E optimized for in LCD PDP TVs and power

Silicon N Channel MOSFET ANHI ASA70R600E optimized for in LCD PDP TVs and power

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Drain to Source Voltage 750V
Current - Continuous Drain(Id) 8A
RDS(on) 600mΩ
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.8V
Reverse Transfer Capacitance (Crss@Vds) 3.55pF@50V
Number 1 N-channel
Pd - Power Dissipation 28W
Input Capacitance(Ciss) 599pF@50V
Gate Charge(Qg) 8nC
Description N-Channel 750V 8A 28W Through Hole TO-220F
Mfr. Part # ASA70R600E
Package TO-220F
Model Number ASA70R600E

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  1. Product Details
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Product Specification

Drain to Source Voltage 750V Current - Continuous Drain(Id) 8A
RDS(on) 600mΩ Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.8V Reverse Transfer Capacitance (Crss@Vds) 3.55pF@50V
Number 1 N-channel Pd - Power Dissipation 28W
Input Capacitance(Ciss) 599pF@50V Gate Charge(Qg) 8nC
Description N-Channel 750V 8A 28W Through Hole TO-220F Mfr. Part # ASA70R600E
Package TO-220F Model Number ASA70R600E

Product Overview

The ASA70R600E is a Silicon N-Channel MOS Field-Effect Transistor designed for applications in single-ended flyback or two-transistor forward topologies. It is suitable for use in PD adaptors, LCD & PDP TVs, and LED lighting. Key features include a low drain-source on-resistance of 0.540 (typ.) and easy gate switching control due to its enhancement mode operation with a threshold voltage (Vth) ranging from 2.8 to 4.2 V.

Product Attributes

  • Brand: ASA
  • Type: Silicon N-Channel MOS
  • Mode: Enhancement mode

Technical Specifications

Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 705 V VGS=0V, ID=10mA
Gate threshold voltage V(GS)th 2.8 - 4.2 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 100 nA VDS=700V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - 100 nA VGS=30V, VDS=0V
Drain-source on-state resistance RDS(on) 0.54 - 0.60 VGS=10V, ID=3A, Tj=25C
Gate resistance (Intrinsic) RG 86 f=1MHz, open drain
Input capacitance Ciss 599 pF VGS=0V, VDS=50V, f=10kHz
Output capacitance Coss 76 pF VGS=0V, VDS=50V, f=10kHz
Reverse transfer capacitance Crss 3.55 pF VGS=0V, VDS=50V, f=10kHz
Turn-on delay time td(on) 26.8 ns VDD=400V,VGS=13V,ID=3A, RG=6.8
Rise time tr 24.8 ns VDD=400V,VGS=13V,ID=3A, RG=6.8
Turn-off delay time td(off) 127.6 ns VDD=400V,VGS=13V,ID=3A, RG=6.8
Fall time tf 21.2 ns VDD=400V,VGS=13V,ID=3A, RG=6.8
Gate to source charge Qgs 2.6 nC VDD=400V, ID=3A, VGS=0 to 10V
Gate to drain charge Qgd 1.7 nC VDD=400V, ID=3A, VGS=0 to 10V
Gate charge total Qg 8.0 nC VDD=400V, ID=3A, VGS=0 to 10V
Gate plateau voltage Vplateau 6.6 V VDD=400V, ID=3A, VGS=0 to 10V
Diode forward voltage VSD 0.76 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 174 ns VR=400V, IF=3A, diF/dt=100A/s
Reverse recovery charge Qrr 1.2 uC VR=400V, IF=3A, diF/dt=100A/s
Peak reverse recovery current Irrm 13.5 A VR=400V, IF=3A, diF/dt=100A/s
Continuous drain current ID 8 A TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse 24 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS 624 mJ -
MOSFET dv/dt ruggedness dv/dt 45 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 V static
Gate source voltage (dynamic) VGS -30 V AC (f>1 Hz)
Power dissipation Ptot 28 W TC=25C
Storage temperature Tstg -55 - 150 C -
Operating junction temperature Tj -55 - 150 C -
Reverse diode dv/dt dv/dt 15 V/ns VDS=0...400V, ISD<=48A, Tj=25C
Thermal resistance, junction - case RthJC 4.5 C/W -
Thermal resistance, junction - ambient RthJA 80 C/W device on PCB, minimal footprint

2410121550_ANHI-ASA70R600E_C5440006.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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