Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 120mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.3V@250uA |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF |
| Input Capacitance(Ciss) | 945pF |
| Pd - Power Dissipation | 1.4W |
| Output Capacitance(Coss) | 115pF |
| Gate Charge(Qg) | 9.4nC@4.5V |
| Description | P-Channel 30V 4.2A 1.4W Surface Mount SOT-23 |
| Mfr. Part # | AO3401 |
| Package | SOT-23 |
| Model Number | AO3401 |
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 120mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.3V@250uA | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | Input Capacitance(Ciss) | 945pF |
| Pd - Power Dissipation | 1.4W | Output Capacitance(Coss) | 115pF |
| Gate Charge(Qg) | 9.4nC@4.5V | Description | P-Channel 30V 4.2A 1.4W Surface Mount SOT-23 |
| Mfr. Part # | AO3401 | Package | SOT-23 |
| Model Number | AO3401 |
The AO3401 is a P-Channel Enhancement Mode Field Effect Transistor designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as low as 2.5V. This makes it suitable for applications such as load switches or Pulse Width Modulation (PWM). The standard AO3401 is Pb-free, meeting ROHS & Sony 259 specifications. The AO3401L is a Green Product ordering option, and both AO3401 and AO3401L are electrically identical.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25C unless otherwise specified) | ||||||
| VDS | Drain-Source voltage | -30 | V | |||
| VGS | Gate-Source voltage | ±12 | V | |||
| ID | Continuous Drain Current 1) | TA = 25 C | -4.2 | A | ||
| ID | Continuous Drain Current 1) | TA = 70 C | -3.5 | A | ||
| IDM | Pulsed Drain Current 2) | -30 | A | |||
| PD | Maximum Power Dissipation 1) | TA = 25 C | 1.4 | W | ||
| PD | Maximum Power Dissipation 1) | TA = 70 C | 1 | W | ||
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 | to | +150 | C | |
| Thermal Characteristics | ||||||
| RJA | Maximum Junction-to-Ambient 1), t ≤ 10s | 65 | 90 | °C/W | ||
| RJA | Maximum Junction-to-Ambient 1), Steady-State | 85 | 125 | °C/W | ||
| RJL | Maximum Junction-to-Lead 3), Steady-State | 43 | 60 | °C/W | ||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250µA | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -24V, VGS = 0V | -1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -24V,VGS = 0V, TJ = 55°C | -5 | µA | ||
| IGSS | Gate-body Leakage current | VDS = 0V, VGS = ±12V | ±100 | nA | ||
| VGS(th) | Gate-Threshold Voltage | VDS = VGS, ID = -250µA | -0.7 | -1.0 | -1.3 | V |
| ID(ON) | On state drain current | VGS = -4.5V, VDS = -5V | -25 | A | ||
| RDS(on) | Drain-Source On-Resistance | VGS = -10V, ID = -4.2A | 42 | 50 | mΩ | |
| RDS(on) | Drain-Source On-Resistance | VGS = -10V, ID = -4.2A, TJ=125°C | 75 | mΩ | ||
| RDS(on) | Drain-Source On-Resistance | VGS = -4.5V, ID = -4A | 53 | 65 | mΩ | |
| RDS(on) | Drain-Source On-Resistance | VGS = -2.5V, ID = -1A | 80 | 120 | mΩ | |
| gfs | Forward Transconductance | VDS = -5V, ID =-5A | 7 | 11 | S | |
| VSD | Diode Forward Voltage | IS = -1A,VGS = 0V | -0.75 | -1 | V | |
| IS | Maximum Body-Diode Continuous Current | -2.2 | A | |||
| Dynamic Parameters | ||||||
| Ciss | Input Capacitance | VGS = 0V VDS = -15V f = 1.0MHz | 945 | pF | ||
| Coss | Output Capacitance | 115 | pF | |||
| Crss | Reverse Transfer Capacitance | 77 | pF | |||
| Rg | Gate resistance | VGS = 0V, VDS = 0V, f = 1MHz | 6 | Ω | ||
| Switching Parameters | ||||||
| Qg | Total Gate Charge | VGS = -4.5V, VDS = -15V, ID = -4A | 9.4 | nC | ||
| Qgs | Gate-Source Charge | |||||
| Qgd | Gate-Drain Charge | |||||
| td(on) | Turn-On Delay Time | VGS = -10V, VDS = -15V, RL = 3.6Ω, RGEN = 6Ω | 6.3 | ns | ||
| tr | Rise Time | 3.2 | ns | |||
| td(off) | Turn-Off Delay Time | 38.2 | ns | |||
| tf | Fall Time | 12 | ns | |||
| trr | Body Diode Reverse Recovery Time | IF = -4A, dI/dt = 100A/µs | 20.2 | ns | ||
| Qrr | Body Diode Reverse Recovery Charge | 11.2 | nC | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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