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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China ASW65R038EFD Silicon N Channel MOSFET Featuring Low RDS ON for Telecom Power and
China ASW65R038EFD Silicon N Channel MOSFET Featuring Low RDS ON for Telecom Power and

  1. China ASW65R038EFD Silicon N Channel MOSFET Featuring Low RDS ON for Telecom Power and

ASW65R038EFD Silicon N Channel MOSFET Featuring Low RDS ON for Telecom Power and

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Drain to Source Voltage 655V
Current - Continuous Drain(Id) 80A
Operating Temperature - -55℃~+150℃
RDS(on) 38mΩ@10V,28A
Gate Threshold Voltage (Vgs(th)) 5V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 12.1pF
Number 1 N-channel
Output Capacitance(Coss) 169pF
Pd - Power Dissipation 500W
Input Capacitance(Ciss) 6.033nF
Gate Charge(Qg) 158.2nC@10V
Description N-Channel 655V 80A 500W Through Hole TO-247
Mfr. Part # ASW65R038EFD
Package TO-247
Model Number ASW65R038EFD

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  1. Product Details
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Product Specification

Drain to Source Voltage 655V Current - Continuous Drain(Id) 80A
Operating Temperature - -55℃~+150℃ RDS(on) 38mΩ@10V,28A
Gate Threshold Voltage (Vgs(th)) 5V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 12.1pF Number 1 N-channel
Output Capacitance(Coss) 169pF Pd - Power Dissipation 500W
Input Capacitance(Ciss) 6.033nF Gate Charge(Qg) 158.2nC@10V
Description N-Channel 655V 80A 500W Through Hole TO-247 Mfr. Part # ASW65R038EFD
Package TO-247 Model Number ASW65R038EFD

ASW65R038EFD MOSFET Silicon N-Channel MOS

Product Overview

The ASW65R038EFD is a Silicon N-Channel MOSFET designed for soft switching applications. It is suitable for Boost PFC switch, HB, AHB, and LLC half-bridge and full-bridge topologies, including phase-shift-bridge (ZVS) and LLC applications. Key application areas include Server Power, Telecom Power, EV Charging, and Solar Inverters. This enhancement mode MOSFET features a low drain-source on-resistance (RDS(ON)) of 0.034 (typ.) and is easy to control with a gate switching threshold voltage (Vth) of 3 to 5 V.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon N-Channel MOS
  • Color: Not specified
  • Package: TO247
  • Marking: ASW65R038EFD

Technical Specifications

Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage VDS @ Tj,max 700 V Tj,max
Drain-source breakdown voltage V(BR)DSS 655 V VGS=0V, ID=250uA
Maximum RDS(on) RDS(on),max 38 m -
Drain-source on-state resistance RDS(on) 0.034 - 0.038 VGS=10V, ID=28A, Tj=25C
Typical Gate charge total Qg,typ 158.2 nC -
Gate charge total Qg 158.2 nC VDD =480V, ID =44.2A, VGS =10V
Pulsed drain current ID,pulse 240 A TC=25C, tp limited by Tj,max
Reverse diode dv/dt dv/dt 50 V/ns VDS=0...400V, ISD<=48A, Tj=25C
Continuous drain current ID 80 A TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Avalanche energy, single pulse EAS 2560 mJ Tc=25,VDD=50V,L=20mH, RG=25
Avalanche current, single pulse IAR 16 A Tc=25,VDD=50V,L=20mH, RG=25
MOSFET dv/dt ruggedness dv/dt 26 V/ns VDS=0...150V
Gate source voltage (static) VGS -20 to 20 V static
Gate source voltage (dynamic) VGS -30 to 30 V AC (f>1 Hz)
Power dissipation Ptot 500 W TC=25C
Storage temperature Tstg -55 to 150 C -
Operating junction temperature Tj -55 to 150 C -
Soldering Temperature TL 260 C Distance of 1.6mm from case for 10s
Thermal resistance, junction - case RthJC 0.205 C/W -
Thermal resistance, junction - ambient RthJA 62 C/W device on PCB, minimal footprint
Gate threshold voltage V(GS)th 3 to 5 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS 5 uA VDS=650V, VGS=0, Tj=25C
Gate-source leakage current IGSS 100 nA VGS=30V, VDS=0V
Gate resistance (Intrinsic) RG 1.2 f=1MHz, open drain
Input capacitance Ciss 6033 pF VGS=0V, VDS=400V, f=1MHz
Output capacitance Coss 169 pF VGS=0V, VDS=400V, f=1MHz
Reverse transfer capacitance Crss 12.1 pF VGS=0V, VDS=400V, f=1MHz
Turn-on delay time td(on) 67.6 ns VDD=400V,VGS=13V,ID=44.2A RG=1.8
Rise time tr 29.8 ns VDD=400V,VGS=13V,ID=44.2A RG=1.8
Turn-off delay time td(off) 30 ns VDD=400V,VGS=13V,ID=44.2A RG=1.8
Fall time tf 325.4 ns VDD=400V,VGS=13V,ID=44.2A RG=1.8
Gate to source charge Qgs 45 nC VDD =480V, ID =44.2A, VGS =10V
Gate to drain charge Qgd 61 nC VDD =480V, ID =44.2A, VGS =10V
Gate plateau voltage Vplateau 6.14 V VDD =480V, ID =44.2A, VGS =10V
Diode forward voltage VSD 0.61 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 173.5 ns Vr=400v,IF=44.2A,di/dt=100A/us
Reverse recovery charge Qrr 1.19 uC Vr=400v,IF=44.2A,di/dt=100A/us
Peak reverse recovery current Irrm 12.7 A Vr=400v,IF=44.2A,di/dt=100A/us

2410121615_ANHI-ASW65R038EFD_C19192888.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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