Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 116A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 6.9mΩ@10V,20A |
| Gate Threshold Voltage (Vgs(th)) | 3.4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 375pF |
| Pd - Power Dissipation | 161W |
| Input Capacitance(Ciss) | 3.861nF |
| Gate Charge(Qg) | 63.5nC@10V |
| Description | N-Channel 100V 116A 161W Surface Mount TO-252 |
| Mfr. Part # | AUD069N10A |
| Package | TO-252 |
| Model Number | AUD069N10A |
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Product Specification
| Drain to Source Voltage | 100V | Current - Continuous Drain(Id) | 116A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 6.9mΩ@10V,20A |
| Gate Threshold Voltage (Vgs(th)) | 3.4V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - | Number | 1 N-channel |
| Output Capacitance(Coss) | 375pF | Pd - Power Dissipation | 161W |
| Input Capacitance(Ciss) | 3.861nF | Gate Charge(Qg) | 63.5nC@10V |
| Description | N-Channel 100V 116A 161W Surface Mount TO-252 | Mfr. Part # | AUD069N10A |
| Package | TO-252 | Model Number | AUD069N10A |
The AUD069N10A is a Silicon N-Channel MOSFET designed for high-speed power switching applications. It features low drain-source on-resistance, enhanced body diode dv/dt capability, and improved avalanche ruggedness. This MOSFET is ideal for synchronous rectification in Switch Mode Power Supplies (SMPS), and for hard switching and high-speed DC/DC converters in telecommunications and industrial sectors.
| Model | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) TO220&TO220F | RDS(on),max (m) TO263&TO252 | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|---|
| AUP065N10A | TO220 | AUP065N10A | 100 | 6.5 | - | 60.7 | 464 |
| AUA065N10A | TO220F | AUA065N10A | 100 | 6.5 | - | 60.7 | 464 |
| AUB069N10A | TO263 | AUB069N10A | 100 | - | 6.9 | 60.7 | 464 |
| AUD069N10A | TO252 | AUD069N10A | 100 | - | 6.9 | 60.7 | 464 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Continuous drain current | ID | 116 | A | TC=25C, limited by Tj,max, D = 0.50 |
| Continuous drain current | ID | 91 | A | TC=100C, limited by Tj,max, D = 0.50 |
| Pulsed drain current | ID,pulse | 464 | A | TC=25C, pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 186 | mJ | Tc=25, VDD=50V, Id=27.3A, L=0.5mH, RG=25 |
| Avalanche current, single pulse | IAR | 27.3 | A | Tc=25, VDD=50V, L=0.5mH, RG=25 |
| Gate source voltage (static) | VGS | -20 to 20 | V | static |
| Power dissipation (TO263&TO252&TO220) | Ptot | 161 | W | TC=25C |
| Power dissipation (TO220F) | Ptot | 30 | W | TC=25C |
| Storage temperature | Tstg | -55 to 150 | C | |
| Operating junction temperature | Tj | -55 to 150 | C | |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Thermal resistance, junction - case (TO220F) | RthJC | 5 | C/W | - |
| Thermal resistance, junction - ambient (TO220F) | RthJA | 60 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO220&TO263&TO252) | RthJC | 1 | C/W | - |
| Thermal resistance, junction - ambient (TO220&TO263&TO252) | RthJA | 62 | C/W | device on PCB, minimal footprint |
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 3.4 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=95V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance (TO220&TO220F) | RDS(on) | 6.5 | m | VGS=10V, ID=20A, Tj=25C |
| Drain-source on-state resistance (TO263) | RDS(on) | 6.9 | m | VGS=10V, ID=20A, Tj=25C |
| Drain-source on-state resistance (TO252) | RDS(on) | 6.9 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | 1.5 | f=1MHz, open drain | |
| Transconductance | GFS | 52 | S | VDS=5V IDS=20A |
| Input capacitance | Ciss | 3861 | pF | VGS=0V, VDS=50V, f=1MHz |
| Output capacitance | Coss | 375 | pF | VGS=0V, VDS=50V, f=1MHz |
| Reverse transfer capacitance | Crss | 15.1 | pF | VGS=0V, VDS=50V, f=1MHz |
| Turn-on delay time | td(on) | 30 | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Rise time | tr | 56 | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Turn-off delay time | td(off) | 71 | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Fall time | tf | 44 | ns | VDD=50V,VGS=10V,ID=20A, RG=10 |
| Gate to source charge | Qgs | 16.1 | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 18.3 | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Gate charge total | Qg | 63.5 | nC | VDD=50V, ID=20A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.7 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 46 | ns | VR=30V, IF=20A, diF/dt=300A/s |
| Reverse recovery charge | Qrr | 220 | nC | VR=30V, IF=20A, diF/dt=300A/s |
| Peak reverse recovery current | Irrm | 8.6 | A | VR=30V, IF=20A, diF/dt=300A/s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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