Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 28A |
| RDS(on) | 120mΩ |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.07pF |
| Pd - Power Dissipation | 34W |
| Input Capacitance(Ciss) | 2.389nF |
| Gate Charge(Qg) | 47.59nC |
| Description | 28A 34W Through Hole TO-220F |
| Mfr. Part # | ASA60R150E |
| Package | TO-220F |
| Model Number | ASA60R150E |
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Product Specification
| Drain to Source Voltage | - | Current - Continuous Drain(Id) | 28A |
| RDS(on) | 120mΩ | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | Reverse Transfer Capacitance (Crss@Vds) | 5.07pF |
| Pd - Power Dissipation | 34W | Input Capacitance(Ciss) | 2.389nF |
| Gate Charge(Qg) | 47.59nC | Description | 28A 34W Through Hole TO-220F |
| Mfr. Part # | ASA60R150E | Package | TO-220F |
| Model Number | ASA60R150E |
The ASA60R150E and ASW60R150E are N-Channel Silicon MOSFETs designed for high-efficiency power applications. Featuring low drain-source on-resistance (RDS(on)) and easy gate control, these enhancement-mode devices are ideal for use as Boost PFC switches, single-ended flyback converters, and in half-bridge or asymmetric half-bridge topologies. They are well-suited for a wide range of applications including PC power supplies, adapters, LCD & PDP TVs, telecom power systems, UPS, and LED lighting.
| Model | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| ASA60R150E | TO220F | ASA60R150E | 650 | 150 | 47.59 | 84 |
| ASW60R150E | TO247 | ASW60R150E | 650 | 150 | 47.59 | 84 |
| Parameter | Symbol | Values (Unit) | Note / Test Condition |
|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 605 V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - - 100 nA | VDS=600V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - - 100 nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 0.12 - 0.15 | VGS=10V, ID=10A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - 5.8 - | f=1MHz, open drain |
| Input capacitance | Ciss | - 2389 - pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 218 - pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 5.07 - pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 12.4 - ns | VDD=400V,VGS=13V,ID=11.3A, RG=1.7 |
| Rise time | tr | - 21.6 - ns | VDD=400V,VGS=13V,ID=11.3A, RG=1.7 |
| Turn-off delay time | td(off) | - 50 - ns | VDD=400V,VGS=13V,ID=11.3A, RG=1.7 |
| Fall time | tf | - 18.4 - ns | VDD=400V,VGS=13V,ID=11.3A, RG=1.7 |
| Gate to source charge | Qgs | - 8.522 - nC | VDD=400V, ID=11.3A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 8.297 - nC | VDD=400V, ID=11.3A, VGS=0 to 10V |
| Gate charge total | Qg | - 47.59 - nC | VDD=400V, ID=11.3A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - 5.4 - V | VDD=400V, ID=11.3A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.7 - V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 288 - ns | VR=400V, IF=11.3 A,diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 4.3 - uC | VR=400V, IF=11.3 A,diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 26.2 - A | VR=400V, IF=11.3 A,diF/dt=100A/s |
| Parameter | Symbol | Values (Unit) | Note / Test Condition |
|---|---|---|---|
| Thermal resistance, junction - case (TO220F) | RthJC | - - 3.65 C/W | - |
| Thermal resistance, junction - ambient (TO220F) | RthJA | - - 80 C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO247) | RthJC | - - 0.64 C/W | - |
| Thermal resistance, junction - ambient (TO247) | RthJA | - - 62 C/W | device on PCB, minimal footprint |
| Parameter | Symbol | Values (Unit) | Note / Test Condition |
|---|---|---|---|
| Continuous drain current | ID | - 28 A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - - 84 A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - - 898 mJ | - |
| MOSFET dv/dt ruggedness | dv/dt | - - 130 V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 V | AC (f>1 Hz) |
| Power dissipation (TO220F) | Ptot | - - 34 W | TC=25C |
| Power dissipation (TO247) | Ptot | - - 195 W | TC=25C |
| Storage temperature | Tstg | -55 - 150 C | - |
| Operating junction temperature | Tj | -55 - 150 C | - |
| Reverse diode dv/dt | dv/dt | - - 15 V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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