Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 47A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 90mΩ@10V,20A |
| Gate Threshold Voltage (Vgs(th)) | 5V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10.7pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 298.1pF |
| Input Capacitance(Ciss) | 3.291nF |
| Pd - Power Dissipation | 191W |
| Gate Charge(Qg) | 65.32nC@10V |
| Description | N-Channel 650V 47A 191W Through Hole TO-220F |
| Mfr. Part # | ASA60R090EFDA |
| Package | TO-220F |
| Model Number | ASA60R090EFDA |
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Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 47A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 90mΩ@10V,20A |
| Gate Threshold Voltage (Vgs(th)) | 5V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10.7pF | Number | 1 N-channel |
| Output Capacitance(Coss) | 298.1pF | Input Capacitance(Ciss) | 3.291nF |
| Pd - Power Dissipation | 191W | Gate Charge(Qg) | 65.32nC@10V |
| Description | N-Channel 650V 47A 191W Through Hole TO-220F | Mfr. Part # | ASA60R090EFDA |
| Package | TO-220F | Model Number | ASA60R090EFDA |
The ASA60R090EFDA and ASW60R090EFDA are N-Channel Silicon MOSFETs designed for soft switching applications. They are ideal for use as Boost PFC switches and in Half bridge, Asymmetric half bridge, Series resonance half bridge, and Full bridge topologies, including phase-shift-bridge (ZVS) and LLC configurations. These MOSFETs are well-suited for power supplies in Application Servers, Telecom, EV Charging, and Solar Inverters, offering low drain-source on-resistance (RDS(ON) = 0.080 typ.) and easy gate control with enhancement mode operation (Vth = 3 to 5V).
| Model | Package | Marking |
|---|---|---|
| ASA60R090EFDA | TO220F | ASA60R090EFDA |
| ASW60R090EFDA | TO247-3L | ASW60R090EFDA |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 605 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 3 - 5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 5 | uA | VDS=600V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.080 - 0.090 | VGS=10V, ID=20A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - 0.9 - | f=1MHz, open drain | |
| Continuous drain current | ID | - 47 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 141 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 885 | mJ | Tc=25, VDD=50V, L=10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - 59 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | - 191 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | |
| Operating junction temperature | Tj | -55 - 150 | C | |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Reverse diode dv/dt | dv/dt | - 50 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Diode forward voltage | VSD | - 0.66 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 147.8 | ns | Vr=400v,IF=9.6A,di/dt=100A/us |
| Reverse recovery charge | Qrr | - 0.96 | uC | Vr=400v,IF=9.6A,di/dt=100A/us |
| Peak reverse recovery current | Irrm | - 12.27 | A | Vr=400v,IF=9.6A,di/dt=100A/us |
| Input capacitance | Ciss | - 3291 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 298.1 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 10.7 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 12.1 | ns | VDD=400V,VGS=13V,ID=25.8A RG=1.7 |
| Rise time | tr | - 4.4 | ns | VDD=400V,VGS=13V,ID=25.8A RG=1.7 |
| Turn-off delay time | td(off) | - 39.1 | ns | VDD=400V,VGS=13V,ID=25.8A RG=1.7 |
| Fall time | tf | - 4.3 | ns | VDD=400V,VGS=13V,ID=25.8A RG=1.7 |
| Gate to source charge | Qgs | - 18.16 | nC | VDD=400V, ID=25.8A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 22.93 | nC | VDD=400V, ID=25.8A, VGS=0 to 10V |
| Gate charge total | Qg | - 65.32 | nC | VDD=400V, ID=25.8A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - 5.98 | V | VDD=400V, ID=25.8A, VGS=0 to 10V |
| Thermal resistance, junction - case (TO220F) | RthJC | - 3.65 | C/W | |
| Thermal resistance, junction - ambient (TO220F) | RthJA | - 80 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO247) | RthJC | - 0.65 | C/W | |
| Thermal resistance, junction - ambient (TO247) | RthJA | - 62 | C/W | device on PCB, minimal footprint |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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