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Hefei Purple Horn E-Commerce Co., Ltd.

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China Power MOSFET ADQ120N080G2 1200V Silicon Carbide N Channel Suitable for Flyback
China Power MOSFET ADQ120N080G2 1200V Silicon Carbide N Channel Suitable for Flyback

  1. China Power MOSFET ADQ120N080G2 1200V Silicon Carbide N Channel Suitable for Flyback

Power MOSFET ADQ120N080G2 1200V Silicon Carbide N Channel Suitable for Flyback

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Drain to Source Voltage 1.2kV
Current - Continuous Drain(Id) 35A
Operating Temperature - -55℃~+175℃
RDS(on) 100mΩ
Gate Threshold Voltage (Vgs(th)) 4V
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 4pF
Pd - Power Dissipation 188W
Output Capacitance(Coss) 62pF
Input Capacitance(Ciss) 1.377nF
Gate Charge(Qg) 58nC
Description 1.2kV 35A 100mΩ 4V 188W TO-247-4L Single FETs, MOSFETs RoHS
Mfr. Part # ADQ120N080G2
Package TO-247-4L
Model Number ADQ120N080G2

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 1.2kV Current - Continuous Drain(Id) 35A
Operating Temperature - -55℃~+175℃ RDS(on) 100mΩ
Gate Threshold Voltage (Vgs(th)) 4V Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 4pF Pd - Power Dissipation 188W
Output Capacitance(Coss) 62pF Input Capacitance(Ciss) 1.377nF
Gate Charge(Qg) 58nC Description 1.2kV 35A 100mΩ 4V 188W TO-247-4L Single FETs, MOSFETs RoHS
Mfr. Part # ADQ120N080G2 Package TO-247-4L
Model Number ADQ120N080G2

Product Overview

The ADQ120N080G2, ADW120N080G2, and ADG120N080G2 are 1200V N-Channel Silicon Carbide Power MOSFETs designed for applications such as asymmetrical bridge converters, inverters, and single-switch forward and flyback converters. These devices feature a low drain-source on-resistance of 80m (typ.) and are easy to control with an enhancement mode gate switching. The threshold voltage (Vth) ranges from 2 to 4V.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon Carbide
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Part Name Package Marking VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A)
ADQ120N080G2 TO-247-4L ADQ120N080G2 1200 100 58 94
ADW120N080G2 TO-247-3L ADW120N080G2 1200 100 58 94
ADG120N080G2 TO-263-7L ADG120N080G2 1200 100 58 94
Parameter Symbol Min. Typ. Max. Unit Note / Test Condition
Continuous drain current ID - - 35 A TC=25C
- - 26 A TC=100C
Avalanche energy, single pulse EAS - - 200 mJ Tc=25,VDD=50V,L=1mH, RG=25
Gate source voltage (static) VGS -5 - 20 V static
Power dissipation Ptot - - 188 W TC=25C
Derating factor above 25C - - 1.9 W/C
Storage temperature Tstg -55 - 175 C
Operating junction temperature Tj -55 - 175 C
Soldering Temperature TL - 300 - C Distance of 1.6mm from case for 10s
Transconductance GFS - 8.33 - S VDS=20V IDS=20A
- 7.14 - S VDS=20V IDS=20A, Tj=150C
Maximum Duty Cycle D - 0.50 - -
Thermal Characteristics (TO247) Symbol Min. Typ. Max. Unit Note / Test Condition
Thermal resistance, junction - case RthJC - 0.65 0.8 C/W
Thermal resistance, junction - ambient RthJA - - 40 C/W device on PCB, minimal footprint
Thermal Characteristics (TO263-7L) Symbol Min. Typ. Max. Unit Note / Test Condition
Thermal resistance, junction - case RthJC - - 1.0 C/W
Thermal resistance, junction - ambient RthJA - - 62 C/W device on PCB, minimal footprint
Static Characteristics Symbol Min. Typ. Max. Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 1200 - - V VGS=0V, ID=1mA
Gate threshold voltage V(GS)th 2.0 2.8 4.0 V VDS=VGS, ID=10mA
Zero gate voltage drain current IDSS - - 1 uA VDS=1200V, VGS=0V
Gate-source leakage current IGSS+ - - 100 nA VGS=20V, VDS=0V
Gate-source leakage current IGSS- - - -100 nA VGS=-5V, VDS=0V
Drain-source on-state resistance RDS(on) - 80 100 m VGS=20V, ID=20A, Tj=25C
- 93.1 - m VGS=20V, ID=20A, Tj=150C
Gate resistance (Intrinsic) RG - 4.5 - f=1MHz, open drain
Dynamic Characteristics Symbol Min. Typ. Max. Unit Note / Test Condition
Input capacitance Ciss - 1377 - pF VGS=0V, VDS=1000V, f=200KHz
Output capacitance Coss - 62 - pF VGS=0V, VDS=1000V, f=200KHz
Reverse transfer capacitance Crss - 4 - pF VGS=0V, VDS=1000V, f=200KHz
Turn-on delay time td(on) - 10 - ns VDD=800V, VGS=20V, ID=20A,RG=0; TJ =25
Rise time tr - 6 - ns
Turn-off delay time td(off) - 16 - ns
Fall time tf - 10 - ns
Turn-on Switching Energy Eon - 748.8 - uJ
Turn-off Switching Energy Eoff - 31.2 - uJ
Gate Charge Characteristics Symbol Min. Typ. Max. Unit Note / Test Condition
Gate to source charge Qgs - 18 - nC VDD=800V, ID=20A, VGS=20V
Gate to drain charge Qgd - 17 - nC VDD=800V, ID=20A, VGS=20V
Gate charge total Qg - 58 - nC VDD=800V, ID=20A, VGS=20V
Reverse Diode Characteristics Symbol Min. Typ. Max. Unit Note / Test Condition
Continuous Source Current ISD - - 35 A
Diode forward voltage VSD - 3.8 - V IS = 10A, VGS = 0V, Tj=25C
Reverse recovery time trr - 57 - ns VDD =800VID =20A, +VGS =+15V,-VGS =-4V LLoad=500uHRg=0TJ =25
Reverse recovery charge Qrr - 195 - nC
Peak reverse recovery current Irrm - 6.84 - A

2410121516_ANHI-ADQ120N080G2_C5440043.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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