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Hefei Purple Horn E-Commerce Co., Ltd.

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China ASDSemi ASDM30P11TD R P Channel MOSFET with 30 Volt Drain Source Voltage and Low
China ASDSemi ASDM30P11TD R P Channel MOSFET with 30 Volt Drain Source Voltage and Low

  1. China ASDSemi ASDM30P11TD R P Channel MOSFET with 30 Volt Drain Source Voltage and Low

ASDSemi ASDM30P11TD R P Channel MOSFET with 30 Volt Drain Source Voltage and Low

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Drain to Source Voltage 30V
Current - Continuous Drain(Id) 55A
Operating Temperature - -55℃~+150℃
RDS(on) 8mΩ@10V
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA
Type P-Channel
Reverse Transfer Capacitance (Crss@Vds) 309pF
Number 1 P-Channel
Output Capacitance(Coss) 400pF
Input Capacitance(Ciss) 3.482nF
Pd - Power Dissipation 31.2W
Gate Charge(Qg) 61nC@10V
Description P-Channel 30V 55A 31.2W Surface Mount DFN-8(3x3)
Mfr. Part # ASDM30P11TD-R
Package DFN-8(3x3)
Model Number ASDM30P11TD-R

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 30V Current - Continuous Drain(Id) 55A
Operating Temperature - -55℃~+150℃ RDS(on) 8mΩ@10V
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA Type P-Channel
Reverse Transfer Capacitance (Crss@Vds) 309pF Number 1 P-Channel
Output Capacitance(Coss) 400pF Input Capacitance(Ciss) 3.482nF
Pd - Power Dissipation 31.2W Gate Charge(Qg) 61nC@10V
Description P-Channel 30V 55A 31.2W Surface Mount DFN-8(3x3) Mfr. Part # ASDM30P11TD-R
Package DFN-8(3x3) Model Number ASDM30P11TD-R

Product Overview

The Ascend Semiconductor ASDM30P11TD is a -30V P-Channel MOSFET designed for power switch circuits in adaptors, chargers, and notebook AC-in load switches. It features low FOM (RDS(on)Qgd), 100% avalanche testing, and is easy to use and drive. This RoHS compliant component offers a continuous drain current of -55A at 25C and a low on-state resistance of 6.4 m (typ.) at VGS = -10V. Its robust design makes it suitable for battery protection charge/discharge applications.

Product Attributes

  • Brand: Ascend Semiconductor Co.,Ltd
  • Product Type: P-Channel MOSFET
  • Package Type: PDFN3*3-8
  • Compliance: RoHS compliant
  • Testing: 100% avalanche tested
  • Ease of Use: Easy to use/drive

Technical Specifications

Parameter Symbol Test Conditions Value Unit
Model Number ASDM30P11TD
Drain-Source Voltage VDS VGS=0V -30 V
On-State Resistance (typ.) RDS(on) VGS = -10V, ID = -20A 6.4 m
On-State Resistance (max.) RDS(on) VGS = -10V, ID = -20A 8 m
On-State Resistance (typ.) RDS(on) VGS = -4.5V, ID = -10A 10.5 m
On-State Resistance (max.) RDS(on) VGS = -4.5V, ID = -10A 13 m
Continuous Drain Current ID TC = 25C -55 A
Continuous Drain Current ID TC = 100C -34.6 A
Pulsed Drain Current ID,pulse -220 A
Gate-Source Voltage VGSS 25 V
Single Pulse Avalanche Energy EAS 200 mJ
Power Dissipation PD TA = 25C 31.2 W
Operating & Storage Temperature TJ, Tstg -55 to +150 C
Thermal Resistance (Junction-to-Case) RthJC 4 C/W
Thermal Resistance (Junction-to-Ambient) RthJA 35 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -30 V
Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V, TJ = 25C -1 A
Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V, TJ = 125C -100 A
Gate-Source Leakage Current IGSS VGS = 25V 100 nA
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.2 to -2.5 V
Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1.0MHz 3482 pF
Output Capacitance Coss VGS = 0V, VDS = -15V, f = 1.0MHz 400 pF
Reverse Transfer Capacitance Crss VGS = 0V, VDS = -15V, f = 1.0MHz 309 pF
Total Gate Charge Qg VDS = -15V, ID = -10A, VGS = -10V 61 nC
Gate-Source Charge Qgs VDS = -15V, ID = -10A, VGS = -10V 12 nC
Gate-Drain Charge Qgd VDS = -15V, ID = -10A, VGS = -10V 10 nC
Turn-on Delay Time td(on) VDS = -15V, VGS = -10V, RG = 3, ID = -10A 19 ns
Turn-on Rise Time tr VDS = -15V, VGS = -10V, RG = 3, ID = -10A 33 ns
Turn-off Delay Time td(off) VDS = -15V, VGS = -10V, RG = 3, ID = -10A 38 ns
Turn-off Fall Time tf VDS = -15V, VGS = -10V, RG = 3, ID = -10A 15 ns
Body Diode Forward Voltage VSD TJ = 25C, ISD = -10A, VGS = 0V -1.2 V
Continuous Diode Forward Current IS -55 A
Reverse Recovery Time trr IF = -10A, diF/dt = -100A/s 45 ns
Reverse Recovery Charge Qrr IF = -10A, diF/dt = -100A/s 29 nC

2410121738_ASDsemi-ASDM30P11TD-R_C2758227.pdf

Company Details

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,

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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