Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 11A |
| RDS(on) | 350mΩ |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.3pF@50V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 901pF@50V |
| Pd - Power Dissipation | 83W |
| Gate Charge(Qg) | - |
| Description | N-Channel 700V 11A 83W Surface Mount TO-252 |
| Mfr. Part # | ASD65R350E |
| Package | TO-252 |
| Model Number | ASD65R350E |
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Product Specification
| Drain to Source Voltage | 700V | Current - Continuous Drain(Id) | 11A |
| RDS(on) | 350mΩ | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | Reverse Transfer Capacitance (Crss@Vds) | 5.3pF@50V |
| Number | 1 N-channel | Input Capacitance(Ciss) | 901pF@50V |
| Pd - Power Dissipation | 83W | Gate Charge(Qg) | - |
| Description | N-Channel 700V 11A 83W Surface Mount TO-252 | Mfr. Part # | ASD65R350E |
| Package | TO-252 | Model Number | ASD65R350E |
The ASA MO 1. 2. 3. A65R350 OSFET is a N-Channel MOSFET designed for Power Factor Correction (PFC) and hard switching applications. It is suitable for use in PC power supplies, LCD Adaptors, lighting, servers, and telecom power applications. Key features include low drain-source on-resistance and easy gate switching control. This device offers enhanced performance in hard switching and resonant mode applications.
| Part Name | Package | VDS @ Tj,max | RDS(on),max | Qg,typ | ID,pulse | Body diode | dv/dt | Vt | Marking |
|---|---|---|---|---|---|---|---|---|---|
| ASA65R350E | TO220F | 700 V | 350 m | 10.7 nC | 55 A | 2.8 V | 11 V/ns | 4.2 V | ASA65R350E |
| ASU65R350E | TO251 | 700 V | 350 m | 10.7 nC | 55 A | 2.8 V | 11 V/ns | 4.2 V | ASU65R350E |
| ASD65R350E | TO252 | 700 V | 350 m | 10.7 nC | 55 A | 2.8 V | 11 V/ns | 4.2 V | ASD65R350E |
| Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 100 | nA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.318 - 0.35 | VGS=10V, ID=5.5A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | 11 | - | f=1MHz, open drain |
| Input capacitance | Ciss | 901 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | 59 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | 5.3 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | 27 | ns | VDD=400V, ID=5.6A,RG=10 |
| Rise time | tr | 31 | ns | VDD=400V, ID=5.6A,RG=10 |
| Turn-off delay time | td(off) | 41 | ns | VDD=400V, ID=5.6A,RG=10 |
| Fall time | tf | 29 | ns | VDD=400V, ID=5.6A,RG=10 |
| Gate to source charge | Qgs | 5.8 | nC | VDD=400V, ID=5.6A, VGS=13V |
| Gate to drain charge | Qgd | 17 | nC | VDD=400V, ID=5.6A, VGS=13V |
| Gate charge total | Qg | 22 | nC | VDD=400V, ID=5.6A, VGS=13V |
| Gate plateau voltage | Vplateau | 5.3 | V | VDD=400V, ID=5.6A, VGS=13V |
| Diode forward voltage | VSD | 0.74 | V | VGS=0V, IF=1 A, Tj=25C |
| Reverse recovery time | trr | 250 | ns | VR=400V, IF=5.6 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 2572 | nC | VR=400V, IF=5.6 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 19.6 | A | VR=400V, IF=5.6 A, diF/dt=100A/s |
| Continuous drain current | ID | - 11 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 55 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 624 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | - 11 | V/ns | VDS=0...150V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation (TO220F) | Ptot | - 31 | W | TC=25C |
| Power dissipation (TO251,TO252) | Ptot | - 83 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | |
| Operating junction temperature | Tj | -55 - 150 | C | |
| Continuous diode forward current | IS | - 48 | A | TC=25C |
| Diode pulse current | IS,pulse | - 151 | A | TC=25C |
| Reverse diode dv/dt | dv/dt | - 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Maximum diode commutation speed | diF/dt | - 50 | A/us | VDS=0...400V, ISD<=48A, Tj=25C |
| Insulation withstand voltage | VISO | n.a. | V | Vrms, TC=25C, t=1min |
| Thermal characteristics (TO220 FullPAK) | Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - 4.0 | C/W | ||
| Thermal resistance, junction - ambient | RthJA | - 80 | C/W | device on PCB, minimal footprint |
| Thermal characteristics (TO251 and TO252) | Parameter | Symbol | Values | Unit | Note / Test Condition |
|---|---|---|---|---|---|
| Thermal resistance, junction - case | RthJC | - 1.5 | C/W | ||
| Thermal resistance, junction - ambient | RthJA | - 62 | C/W | device on PCB, minimal footprint |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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