Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 164A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 16mΩ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Type | 1 N-channel |
| Reverse Transfer Capacitance (Crss@Vds) | 9.3pF |
| Output Capacitance(Coss) | 255pF |
| Input Capacitance(Ciss) | 6.413nF |
| Pd - Power Dissipation | 760W |
| Gate Charge(Qg) | 70.5nC |
| Description | 1.2kV 164A 16mΩ 2.8V 760W TO-247-4L Single FETs, MOSFETs RoHS |
| Mfr. Part # | BCZ120N16M1 |
| Package | TO-247-4L |
| Model Number | BCZ120N16M1 |
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Product Specification
| Drain to Source Voltage | 1.2kV | Current - Continuous Drain(Id) | 164A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 16mΩ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | Type | 1 N-channel |
| Reverse Transfer Capacitance (Crss@Vds) | 9.3pF | Output Capacitance(Coss) | 255pF |
| Input Capacitance(Ciss) | 6.413nF | Pd - Power Dissipation | 760W |
| Gate Charge(Qg) | 70.5nC | Description | 1.2kV 164A 16mΩ 2.8V 760W TO-247-4L Single FETs, MOSFETs RoHS |
| Mfr. Part # | BCZ120N16M1 | Package | TO-247-4L |
| Model Number | BCZ120N16M1 |
The BCZ120N16M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It features a high blocking voltage of 1200 V and a low on-resistance of 16 m, enabling system efficiency improvements and higher frequency applicability. With its high-speed switching capabilities, low capacitance, and inherent avalanche ruggedness, this MOSFET is easy to parallel and simple to drive, contributing to increased power density and reduced cooling efforts. Ideal for LED lighting power supplies, high voltage DC/DC converters, industrial power supplies, and HVAC systems.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage | (TJ = 25 unless otherwise noted) | 1200 | V | ||
| VGS | Gate to Source Voltage (DC) | -10 | +25 | V | ||
| VGSop | Recommended Operation Value | -5 | +20 | V | ||
| ID | Drain Current | VGS = 20V, (TC = 25) | 164 | A | ||
| ID | Drain Current | VGS = 20 V, (TC = 100) | 116 | A | ||
| IDM | Drain Current Pulsed (Note1) | 328 | A | |||
| PD | Power Dissipation (TC = 25) | 760 | W | |||
| Derate Above 25 | 5 | W/ | ||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.2 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 100A | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 1 | 100 | A | |
| IGSS | Gate-Source Leakage Current | VGS = +20 V, VDS = 0 V | 250 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 16 mA | 2.0 | 2.8 | 4.0 | V |
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 16 mA, TJ = 175 | 1.8 | V | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 20 V, ID = 55 A | 16 | 25 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 20V, ID = 55 A, TJ = 175 | 28 | m | ||
| gfs | Transconductance | VGS = 20 V, ID = 55 A | 22.6 | S | ||
| gfs | Transconductance | VDS = 20 V, ID = 55 A, TJ = 175 | 24 | S | ||
| Ciss | Input Capacitance | VDS = 1000 V, VGS = 0 V, f = 700kHz, VAC=25mV | 6413 | pF | ||
| Coss | Output Capacitance | 255 | pF | |||
| Crss | Reverse Transfer Capacitance | 9.3 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 1000 V, VGS = 0 V | 152 | J | ||
| Qgs | Gate to Source Charge | VDS = 800 V, ID = 55A, VGS = -5 V / 20V | 70.5 | nC | ||
| Qgd | Gate to Drain Miller Charge | 117.3 | nC | |||
| Qg(tot) | Total Gate Charge | 315.4 | nC | |||
| RG | Internal Gate Resistance | f = 1 MHz, VAC = 25 mV | 1 | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 800 V, ID = 55 A, VGS = -5V / 20 V, RG(ext)=2.2, L= 100H | 14 | ns | ||
| tr | Turn-On Rise Time | 19 | ns | |||
| td(off) | Turn-Off Delay Time | 39 | ns | |||
| tf | Turn-Off Fall Time | 17 | ns | |||
| Eon | Turn-on Switching Energy | 554 | J | |||
| Eoff | Turn-off Switching Energy | 223 | J | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Diode Forward Current | VGS = -5 V, TC=25 | 159 | A | ||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 27 A | 3.6 | V | ||
| trr | Reverse Recovery Time | VGS=-5V, ISD=55A, VR=800V, dIF/dt =8620A/s | 25.5 | ns | ||
| Qrr | Reverse Recovery Charge | 2476 | nC | |||
| Irrm | Peak Reverse Recovery Current | 154.6 | A | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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