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Hefei Purple Horn E-Commerce Co., Ltd.

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China Low Resistance Silicon N Channel MOSFET ANHI ASW65R095EFD Suitable for Boost PFC
China Low Resistance Silicon N Channel MOSFET ANHI ASW65R095EFD Suitable for Boost PFC

  1. China Low Resistance Silicon N Channel MOSFET ANHI ASW65R095EFD Suitable for Boost PFC

Low Resistance Silicon N Channel MOSFET ANHI ASW65R095EFD Suitable for Boost PFC

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Drain to Source Voltage 700V
Current - Continuous Drain(Id) 47A
Operating Temperature - -55℃~+150℃
RDS(on) 95mΩ
Gate Threshold Voltage (Vgs(th)) 3V
Reverse Transfer Capacitance (Crss@Vds) 4.6pF@50V
Number 1 N-channel
Input Capacitance(Ciss) 4.799nF@50V
Pd - Power Dissipation 391W
Gate Charge(Qg) 85nC
Description 700V 47A 95mΩ 3V 1 N-channel 391W TO-247-3L Single FETs, MOSFETs RoHS
Mfr. Part # ASW65R095EFD
Package TO-247-3L
Model Number ASW65R095EFD

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 700V Current - Continuous Drain(Id) 47A
Operating Temperature - -55℃~+150℃ RDS(on) 95mΩ
Gate Threshold Voltage (Vgs(th)) 3V Reverse Transfer Capacitance (Crss@Vds) 4.6pF@50V
Number 1 N-channel Input Capacitance(Ciss) 4.799nF@50V
Pd - Power Dissipation 391W Gate Charge(Qg) 85nC
Description 700V 47A 95mΩ 3V 1 N-channel 391W TO-247-3L Single FETs, MOSFETs RoHS Mfr. Part # ASW65R095EFD
Package TO-247-3L Model Number ASW65R095EFD

Product Overview

The ASW65R095EFD is a Silicon N-Channel MOSFET designed for high-efficiency power applications. It features low drain-source on-resistance (RDS(on)) of 0.082 (typ.) and easy gate control with an enhancement mode. This MOSFET is ideal for use as a Boost PFC switch and in half-bridge, asymmetric half-bridge, resonance half-bridge, and full-bridge topologies. Key application areas include server power, telecom power, EV charging, and solar inverters.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon N-Channel MOS
  • Package: TO247
  • Marking: ASW65R095EFD

Technical Specifications

Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 655 V VGS=0V, ID=10mA
Gate threshold voltage V(GS)th 3 - 5 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 5 uA VDS=650V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - 100 nA VGS=30V, VDS=0V
Drain-source on-state resistance RDS(on) 0.082 - 0.095 VGS=10V, ID=14A, Tj=25C
Gate resistance RG 13 f=1MHz, open drain
Input capacitance Ciss 4799 pF VGS=0V, VDS=50V, f=10kHz
Output capacitance Coss 482 pF VGS=0V, VDS=50V, f=10kHz
Reverse transfer capacitance Crss 4.6 pF VGS=0V, VDS=50V, f=10kHz
Turn-on delay time td(on) 38.8 ns VDD=400V,VGS=13V,ID=25.8A, RG=1.7
Rise time tr 26.8 ns VDD=400V,VGS=13V,ID=25.8A, RG=1.7
Turn-off delay time td(off) 134.8 ns VDD=400V,VGS=13V,ID=25.8A, RG=1.7
Fall time tf 20 ns VDD=400V,VGS=13V,ID=25.8A, RG=1.7
Gate to source charge Qgs 20 nC VDD=400V, ID=25.8A, VGS=0 to 10V
Gate to drain charge Qgd 30 nC VDD=400V, ID=25.8A, VGS=0 to 10V
Gate charge total Qg 85 nC VDD=400V, ID=25.8A, VGS=0 to 10V
Gate plateau voltage Vplateau 7.4 V VDD=400V, ID=25.8A, VGS=0 to 10V
Diode forward voltage VSD 0.66 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 124.8 ns Vr=400v,IF=9.6A,di/dt=100A/us
Reverse recovery charge Qrr 0.754 uC Vr=400v,IF=9.6A,di/dt=100A/us
Peak reverse recovery current Irrm 11.5 A Vr=400v,IF=9.6A,di/dt=100A/us
Continuous drain current ID 47 A TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse 141 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS 4623 mJ -
MOSFET dv/dt ruggedness dv/dt 57 V/ns VDS=0...400V
Reverse diode dv/dt dv/dt 50 V/ns VDS=0...400V, ISD<=48A, Tj=25C
Gate source voltage (static) VGS -20 - 20 V static
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot 391 W TC=25C
Storage temperature Tstg -55 - 150 C -
Operating junction temperature Tj -55 - 150 C -
Thermal resistance, junction - case RthJC 0.32 C/W -
Thermal resistance, junction - ambient RthJA 62 C/W device on PCB, minimal footprint

2410121609_ANHI-ASW65R095EFD_C5440018.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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