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Hefei Purple Horn E-Commerce Co., Ltd.

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China ASDsemi ASDM100R090NP T MOSFET featuring 100 percent UIS and Rg tested for power
China ASDsemi ASDM100R090NP T MOSFET featuring 100 percent UIS and Rg tested for power

  1. China ASDsemi ASDM100R090NP T MOSFET featuring 100 percent UIS and Rg tested for power

ASDsemi ASDM100R090NP T MOSFET featuring 100 percent UIS and Rg tested for power

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Drain to Source Voltage 100V
Current - Continuous Drain(Id) 75A
RDS(on) 12mΩ@10V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds) 15pF@50V
Output Capacitance(Coss) 270pF
Pd - Power Dissipation 3.1W
Input Capacitance(Ciss) 3.35nF
Gate Charge(Qg) 49nC@10V
Description 100V 75A 3.1W Through Hole TO-220
Mfr. Part # ASDM100R090NP-T
Package TO-220
Model Number ASDM100R090NP-T

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 100V Current - Continuous Drain(Id) 75A
RDS(on) 12mΩ@10V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA Reverse Transfer Capacitance (Crss@Vds) 15pF@50V
Output Capacitance(Coss) 270pF Pd - Power Dissipation 3.1W
Input Capacitance(Ciss) 3.35nF Gate Charge(Qg) 49nC@10V
Description 100V 75A 3.1W Through Hole TO-220 Mfr. Part # ASDM100R090NP-T
Package TO-220 Model Number ASDM100R090NP-T

Product Overview

The ASDM100R090NP is a 100V N-CHANNEL MOSFET designed for high-speed power switching and logic-level applications. It features enhanced body diode dv/dt capability and avalanche ruggedness, with 100% UIS and Rg tested. This MOSFET is ideal for synchronous rectification in SMPS, hard switching and high-speed circuits, and DC/DC converters in telecoms and industrial sectors. It is also Lead Free and Halogen Free.

Product Attributes

  • Brand: Ascend Semiconductor Co.,Ltd
  • Product Type: N-CHANNEL MOSFET
  • Certifications: Lead Free, Halogen Free
  • Testing: 100% UIS Tested, 100% Rg Tested
  • Version: 1.0
  • Date: NOV 2018

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
Product Summary
Drain to Source Voltage VDS 100 V
Drain to Source Voltage VDS Max 100 V
Continuous Drain Current (Silicon Limited) ID TC=25 75 A
Continuous Drain Current (Silicon Limited) ID TC=100 40 A
Pulsed Drain Current IDM 80 A
Drain to Source on Resistance RDS(on) VGS=10V, ID=14A 9 m
Gate Threshold Voltage VGS(th) VGS=VDS, ID=250A 1 1.8 V
Gate to Source Voltage VGS -20 +20 V
Gate to Source Voltage VGS -12 V
Zero Gate Voltage Drain Current IDSS VGS=0V, VDS=95V, Tj=25 1 A
Zero Gate Voltage Drain Current IDSS VGS=0V, VDS=95V, Tj=125 100 A
Gate to Source Leakage Current IGSS VGS=20V, VDS=0V 100 nA
Drain to Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 100 V
Thermal Resistance
Thermal Resistance Junction-Ambient (steady state) RJA 75 /W
Thermal Resistance Junction-Ambient (t10s) RJA 80 /W
Thermal Resistance Junction-Lead RJL 23 /W
Absolute Maximum Ratings
Operating and Storage Temperature TJ, Tstg -55 150
Power Dissipation PDM TC=25 75 W
Avalanche Energy, Single Pulse EAS L=0.1mH, TC=25 80 mJ
Dynamic Characteristics
Input Capacitance Ciss VGS=0V, VDS=50V, f=1MHz 250 270 pF
Output Capacitance Coss VGS=0V, VDS=50V, f=1MHz 12 15.5 pF
Reverse Transfer Capacitance Crss VGS=0V, VDS=50V, f=1MHz 7 8 pF
Gate Resistance RG 49
Rise time tr VDD=50V, ID=14A, VGS=10V, RG=10 5 ns
Turn on Delay Time td(on) VDD=50V, ID=14A, VGS=10V, RG=10 9 ns
Turn off Delay Time td(off) VDD=50V, ID=14A, VGS=10V, RG=10 10 ns
Fall Time tf VDD=50V, ID=14A, VGS=10V, RG=10 6 ns
Total Gate Charge Qg VDD=50V, ID=14A, VGS=10V 21 nC
Total Gate Charge Qg(4.5V) VGS=4.5V, ID=10A 5.5 nC
Gate to Drain (Miller) Charge Qgd VDD=50V, ID=14A, VGS=10V 3.2 nC
Gate to Source Charge Qgs VDD=50V, ID=14A, VGS=10V 12 nC
Transconductance gfs VDS=5V, ID=14A 33.5 S
Reverse Diode Characteristics
Diode Forward Voltage VSD VGS=0V, IF=14A 0.9 1.2 V
Reverse Recovery Time trr VR=50V, IF=14A, dIF/dt=500A/s 47 ns
Reverse Recovery Charge Qrr VR=50V, IF=14A, dIF/dt=500A/s 226 nC
Model Information
Model Number ASDM100R090NP
Voltage Rating 100V
Package Information
Package Type TO-220
Packing TUBE
Quantity 50
Dimensions (TO-220)
Symbol Min (mm) Max (mm) Min (inch) Max (inch)
A 4.00 4.80 0.157 0.189
A1 1.80 2.80 0.071 0.110
b 0.60 1.00 0.024 0.039
b1 1.14 1.78 0.045 0.070
C 1.00 1.40 0.039 0.055
C1 0.36 0.61 0.014 0.024
D 9.90 10.50 0.390 0.413
E 8.38 9.20 0.330 0.362
e 2.54 TYP 0.100 TYP
F
3.50 3.90 0.138 0.154
H 14.48 15.87 0.570 0.625
L 13.00 13.80 0.512 0.543
L1 --- 4.10 --- 0.161

2410121810_ASDsemi-ASDM100R090NP-T_C2972855.pdf

Company Details

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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