Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 750V |
| Current - Continuous Drain(Id) | 6A |
| RDS(on) | 950mΩ |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 4.55pF@50V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 377pF@50V |
| Pd - Power Dissipation | 37W |
| Gate Charge(Qg) | 10.3nC |
| Description | N-Channel 750V 6A 37W Surface Mount SOT223-2L |
| Mfr. Part # | ASE70R950E |
| Package | SOT223-2L |
| Model Number | ASE70R950E |
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Product Specification
| Drain to Source Voltage | 750V | Current - Continuous Drain(Id) | 6A |
| RDS(on) | 950mΩ | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | Reverse Transfer Capacitance (Crss@Vds) | 4.55pF@50V |
| Number | 1 N-channel | Input Capacitance(Ciss) | 377pF@50V |
| Pd - Power Dissipation | 37W | Gate Charge(Qg) | 10.3nC |
| Description | N-Channel 750V 6A 37W Surface Mount SOT223-2L | Mfr. Part # | ASE70R950E |
| Package | SOT223-2L | Model Number | ASE70R950E |
The ASA70R950E, ASD70R950E, and ASE70R950E are N-Channel Silicon MOSFETs designed for efficient power switching applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(ON) = 0.870 typ.) and are easy to control via gate switching. They are ideally suited for single-ended flyback converters, power adapters, LCD & PDP TVs, and LED lighting applications.
| Model | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| ASA70R950E | TO220F | ASA70R950E | 750 | 950 | 10.3 | 18 |
| ASD70R950E | TO252 | ASD70R950E | 750 | 950 | 10.3 | 18 |
| ASE70R950E | SOT223-2L | ASE70R950E | 750 | 950 | 10.3 | 18 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 705 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | 1 | uA VDS=700V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | 100 | nA VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.87 - 0.95 | VGS=10V, ID=2A, Tj=25C | |
| Continuous drain current | ID | - 6 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 18 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 180 | mJ | Tc=25,VDD=50V,L=10mH, RG=25 |
| Avalanche current, single pulse | IAS | - 6 | A | Tc=25,VDD=50V,L=10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - 36 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation (TO220F) | Ptot | - 26 | W | TC=25C |
| Power dissipation (TO252/SOT223) | Ptot | - 37 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Continuous diode forward current | IS | - 6 | A | TC=25C |
| Reverse diode dv/dt | dv/dt | - 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal resistance, junction - case (TO220F) | RthJC | - 4.9 | C/W | - |
| Thermal resistance, junction - ambient (TO220F) | RthJA | - 80 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO252/SOT223) | RthJC | - 3.41 | C/W | - |
| Thermal resistance, junction - ambient (TO252/SOT223) | RthJA | - 62 | C/W | device on PCB, minimal footprint |
| Input capacitance | Ciss | - 377 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 33 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 4.55 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 8.4 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Rise time | tr | - 21.6 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Turn-off delay time | td(off) | - 45.2 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Fall time | tf | - 24.4 | ns | VDD=400V,VGS=13V,ID=2.5A, RG=6.8 |
| Gate to source charge | Qgs | - 1.845 | nC | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 2.723 | nC | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Gate charge total | Qg | - 10.3 | nC | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - 6.4 | V | VDD=400V, ID=2.5A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.77 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 124 | ns | VR=400V, IF=2.5 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 0.88 | uC | VR=400V, IF=2.5 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 10 | A | VR=400V, IF=2.5 A, diF/dt=100A/s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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