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Hefei Purple Horn E-Commerce Co., Ltd.

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China Power management device ASDsemi ASDM30P30BE R P Channel MOSFET with low RDS ON
China Power management device ASDsemi ASDM30P30BE R P Channel MOSFET with low RDS ON

  1. China Power management device ASDsemi ASDM30P30BE R P Channel MOSFET with low RDS ON

Power management device ASDsemi ASDM30P30BE R P Channel MOSFET with low RDS ON

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Drain to Source Voltage 30V
Current - Continuous Drain(Id) 30A
RDS(on) 10mΩ@10V,10A
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 1V
Reverse Transfer Capacitance (Crss@Vds) 315pF@15V
Number 1 P-Channel
Input Capacitance(Ciss) 1.757nF@15V
Pd - Power Dissipation 3.7W
Gate Charge(Qg) 30nC@10V
Description P-Channel 30V 30A 3.7W PDFN3.3x3.3-8
Mfr. Part # ASDM30P30BE-R
Package PDFN3.3x3.3-8
Model Number ASDM30P30BE-R

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 30V Current - Continuous Drain(Id) 30A
RDS(on) 10mΩ@10V,10A Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 1V Reverse Transfer Capacitance (Crss@Vds) 315pF@15V
Number 1 P-Channel Input Capacitance(Ciss) 1.757nF@15V
Pd - Power Dissipation 3.7W Gate Charge(Qg) 30nC@10V
Description P-Channel 30V 30A 3.7W PDFN3.3x3.3-8 Mfr. Part # ASDM30P30BE-R
Package PDFN3.3x3.3-8 Model Number ASDM30P30BE-R

Product Overview

The Ascend Semiconductor ASDM30P30BE is a P-Channel MOSFET designed for various power management applications. It features low RDS(ON) and fast switching capabilities, making it suitable for MB, VGA, Vcore, and POL applications. This device is also available as a Green Device.

Product Attributes

  • Brand: Ascend Semiconductor Co.,Ltd
  • Product Type: P-Channel MOSFET
  • Package Type: PDFN3.3*3.3-8
  • Green Device: Available

Technical Specifications

Product Summary
Model ASDM30P30BE
VDSS -30 V
RDS(ON) Typ @ VGS=-10V 10 m
ID -30 A
Absolute Maximum Ratings (TA=25 unless otherwise specified)
Symbol Parameter Max. Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage 20 V
ID Continuous Drain Current (TC = 25) -30 A
ID Continuous Drain Current (TC = 100) -7 A
IDM Pulsed Drain Current (note1) -90 A
PD Power Dissipation (TA = 25) 3.7 W
TJ, TSTG Operating and Storage Temperature Range -55 to +150
Thermal Characteristics
Symbol Parameter Rating Unit
RJC Thermal Resistance-Junction to Case (Steady State) 4.6 C/W
RJA Thermal Resistance-Junction to Ambient (Steady State) (Note ) 62 C/W
Electrical Characteristics (TJ=25 unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristic
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID= -250A -30 - - V
IDSS Zero Gate Voltage Drain Current VDS = -30V, VGS = 0V - - -1 A
IGSS Gate to Body Leakage Current VDS =0V, VGS = 20V - - 100 nA
On Characteristic
VGS(th) Gate Threshold Voltage VDS= VGS, ID= -250A -1.0 -1.5 -2.5 V
RDS(on) Static Drain-Source on-Resistance (note2) VGS =-10V, ID =-10A - 10 14 m
RDS(on) Static Drain-Source on-Resistance (note2) VGS =-4.5V, ID =-5A - 14.4 20 m
Dynamic Characteristic
Ciss Input Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz - 1757 - pF
Coss Output Capacitance - 371 - pF
Crss Reverse Transfer Capacitance - 315 - pF
Qg Total Gate Charge VDS= -15V, ID = -9.1A, VGS = -10V - 30 - nC
Qgs Gate-Source Charge - 5.3 - nC
Qgd Gate-Drain(Miller) Charge - 7.6 - nC
Switching Characteristic
td(on) Turn-on Delay Time VDD = -15V, ID = -6A, VGS=-10V, RGEN=2.5 - 14 - ns
tr Turn-on Rise Time - 20 - ns
td(off) Turn-off Delay Time - 95 - ns
tf Turn-off Fall Time - 65 - ns
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain to Source Diode Forward Current - - -30 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - -90 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, IS = -10A - - -1.2 V

Notes:

  • Max. current is limited by bonding wire
  • UIS tested and pulse width are limited by maximum junction temperature
  • Surface Mounted on 1in FR-4 board with 1oz.
  • 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
  • 2. Pulse Test: Pulse Width300s, Duty Cycle2%

2410121434_ASDsemi-ASDM30P30BE-R_C5354035.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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