| Non-Repetitive Peak Forward Surge Current | 9A |
| Type | Single-Phase Rectifier |
| Reverse Leakage Current (Ir) | 1uA |
| Description | 9A SOT-23-6L Single FETs, MOSFETs RoHS |
| Mfr. Part # | BDP3HV2LI |
| Package | SOT-23-6L |
| Model Number | BDP3HV2LI |
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Product Specification
| Non-Repetitive Peak Forward Surge Current | 9A | Type | Single-Phase Rectifier |
| Reverse Leakage Current (Ir) | 1uA | Description | 9A SOT-23-6L Single FETs, MOSFETs RoHS |
| Mfr. Part # | BDP3HV2LI | Package | SOT-23-6L |
| Model Number | BDP3HV2LI |
The BDP3HV2LI is an AC-to-DC full-bridge rectifier driver chip featuring integrated 20V rated high-voltage N-channel and P-channel MOSFETs. It offers a low typical on-resistance for NMOS (45 m at VGS = 4.5V) and PMOS (90 m at VGS = -4.5V), a low threshold turn-on voltage (typical 0.7V), and flexible application design. Its compact SOT-23-6L package makes it suitable for various AC-to-DC applications, including rectifier bridges, AC charging for handheld devices, and wireless charging.
| Parameter | Symbol | Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25, unless otherwise specified) | ||||||
| Drain-Source Voltage (N) | VDS | 20 | V | |||
| Drain-Source Voltage (P) | VDS | -20 | V | |||
| Gate-Source Voltage (N & P) | VGS | 20 | V | |||
| Continuous Current (TA =25C, N) | ID | 3 | A | |||
| Continuous Current (TA =25C, P) | ID | -2.5 | A | |||
| Pulsed Peak Current (N) | IDM | 9 | A | |||
| Pulsed Peak Current (P) | IDM | -8 | A | |||
| Power Dissipation (TA =25C) | PD | 1.4 | W | |||
| Power Dissipation (TA =75C) | PD | 0.9 | W | |||
| Storage Temperature Range | TJ , TSTG | -55 | 150 | |||
| Electrical Characteristics (TJ=25, unless otherwise specified) | ||||||
| NMOS Characteristics | ||||||
| Drain-Source Breakdown Voltage | BV DSS | VGS =0V, ID =250A | 20 | V | ||
| Drain Leakage Current | IDSS | VDS =20V, VGS =0V | 1 | A | ||
| Gate-Source Leakage Current | IGSS | VDS =0V, VGS =10V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS , ID =250A | 0.42 | 0.7 | 1.2 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS =4.5V, ID =3A | 45 | 50 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS =2.5V, ID =2.0A | 58 | 65 | m | |
| Input Capacitance | CISS | VDS =10V ,VGS =0V f=1.0MHz | 500 | pF | ||
| Output Capacitance | COSS | 55 | pF | |||
| Reverse Transfer Capacitance | CRSS | 45 | pF | |||
| Gate Resistance | Rg | VGS =0V, VDS =0V, f=1.0MHz | 3.6 | 4.9 | ||
| P-channel Characteristics | ||||||
| Drain-Source Breakdown Voltage | BV DSS | VGS =0V, ID =-250A | -20 | V | ||
| Drain Leakage Current | IDSS | VDS =-20V, VGS =0V | -1 | A | ||
| Gate-Source Leakage Current | IGSS | VDS =0V, VGS =10V | 100 | nA | ||
| Turn-on Threshold Voltage | VGS(th) | VDS =VGS , ID =-250A | -0.4 | -0.7 | -1.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS =-4.5V, ID =-2.0A | 90 | 120 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS =-2.5V, ID =-1.0A | 120 | 160 | m | |
| Input Capacitance | CISS | VDS =-10V ,VGS =0V f=1.0MHz | 200 | pF | ||
| Output Capacitance | COSS | 35 | pF | |||
| Reverse Transfer Capacitance | CRSS | 30 | pF | |||
| Ordering Information | ||||||
| Order Model | Storage Temp | Package | Specification | Marking | ||
| BDP3HV2LI | -55 to +150 | SOT-23-6L | 3000pcs/Reel | XX3HVX2LI (XX internal code) | ||
The BDP3HV2LI can be used with the BDP4056 to form a lithium battery charging management circuit that supports AC input. The BDP3HV2LI converts AC to DC, which is then used by the BDP4056 to charge the lithium battery.
SOT-23-6L
Disclaimer: Shenzhen Bardeen Microelectronics(BDM) CO.,LTD reserves the right to make corrections, modifications, enhancements, improvements, and other changes to its products and to discontinue any product without notice at any time. BDM cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a BDM product. No circuit patent licenses are implied.
Contact Information:
Shenzhen Bardeen Microelectronics(BDM) CO.,LTD.
Building B, Unit B616, HuaShengTai Technology Tower, No.36 Hangkong Road, Sanwei Community, Hangcheng Street, Baoan District, Shenzhen
Tel: 86-755-23505821
Website: http://www.bdasic.com
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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