| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 176A |
| RDS(on) | 4.5mΩ@10V,20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 22.4pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 485.1pF |
| Pd - Power Dissipation | 229W |
| Input Capacitance(Ciss) | 5.763nF |
| Gate Charge(Qg) | 97.3nC@10V |
| Description | N-Channel 100V 176A 229W Surface Mount TO-263 |
| Mfr. Part # | AUB045N10BT |
| Package | TO-263 |
| Model Number | AUB045N10BT |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 100V | Current - Continuous Drain(Id) | 176A |
| RDS(on) | 4.5mΩ@10V,20A | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 22.4pF | Number | 1 N-channel |
| Output Capacitance(Coss) | 485.1pF | Pd - Power Dissipation | 229W |
| Input Capacitance(Ciss) | 5.763nF | Gate Charge(Qg) | 97.3nC@10V |
| Description | N-Channel 100V 176A 229W Surface Mount TO-263 | Mfr. Part # | AUB045N10BT |
| Package | TO-263 | Model Number | AUB045N10BT |
| Parameter | Symbol | Value | Unit | Note / Test Condition | |
|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA | |
| Gate threshold voltage | V(GS)th | 2.5 - 4.5 | V | VDS=VGS, ID=250uA | |
| Zero gate voltage drain current | IDSS | - | 1 | uA | VDS=100V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | +/-100 | nA | VGS=+/-20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 4.1 - 4.5 | m | VGS=10V, ID=20A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - | 1.6 | f=1MHz, open drain | |
| Transconductance | Gfs | 93.2 | S | VDS=5V, ID=50A | |
| Input capacitance | Ciss | - | 5763 | PF | VGS=0V, VDS=50V, f=1MHz |
| Output capacitance | Coss | - | 485.1 | PF | VGS=0V, VDS=50V, f=1MHz |
| Reverse transfer capacitance | Crss | - | 22.4 | PF | VGS=0V, VDS=50V, f=1MHz |
| Turn-on delay time | td(on) | - | 16.6 | ns | VDD=50V,VGS=10V,ID=50A, RG=3 |
| Rise time | tr | - | 74 | ns | VDD=50V,VGS=10V,ID=50A, RG=3 |
| Turn-off delay time | td(off) | - | 51 | ns | VDD=50V,VGS=10V,ID=50A, RG=3 |
| Fall time | tf | - | 53 | ns | VDD=50V,VGS=10V,ID=50A, RG=3 |
| Gate to source charge | Qgs | - | 20.9 | nC | VDD=50V, ID=20A, VGS=10V |
| Gate to drain charge | Qgd | - | 29.1 | nC | VDD=50V, ID=20A, VGS=10V |
| Gate charge total | Qg | - | 97.3 | nC | VDD=50V, ID=20A, VGS=10V |
| Continuous Source Current at silicon | ISD | - | 176 | A | Limited by Tj,max. |
| Diode forward voltage | VSD | - | 1.2 | V | VGS=0V, Is=1A, Tj=25C |
| Reverse recovery time | trr | - | 79 | ns | Vgs=0V, IF=50A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 141 | nC | Vgs=0V, IF=50A, diF/dt=100A/s |
| Peak Reverse Recovery Current | Irrm | - | 3.01 | A | Vgs=0V, IF=50A, diF/dt=100A/s |
| Continuous drain current at silicon | ID | - | 176 | A | TC=25C, Limited by Tj,max. |
| Continuous drain current at package | ID | - | 123 | A | TC=25C |
| Continuous drain current at silicon | ID | 112 | A | TC=100C | |
| Pulsed drain current | ID,pulse | - | 486 | A | TC=25C |
| Avalanche energy, single pulse | EAS | - | 441 | mJ | Tc=25,VDD=50V,Vgs=10V, L=0.5mH, RG=25 |
| Avalanche current, single pulse | IAR | - | 42 | A | Tc=25, VDD=50V, L=0.5mH, RG=25 |
| Gate source voltage (static) | VGS | -20 - 20 | V | static | |
| Power dissipation | Ptot | - | 229 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | ||
| Operating junction temperature | Tj | -55 - 150 | C | ||
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s | |
| Thermal resistance, junction - case | RthJC | - | 0.54 | C/W | |
| Thermal resistance, junction - ambient | RthJA | - | 62 | C/W | device on PCB, minimal footprint |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!