| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 29A |
| RDS(on) | 113mΩ |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.31pF@100V |
| Number | 1 N-channel |
| Pd - Power Dissipation | 76W |
| Input Capacitance(Ciss) | 1.446nF@100V |
| Gate Charge(Qg) | 32.6nC |
| Description | N-Channel 29A 76W Through Hole TO-220F |
| Mfr. Part # | ASA50R130E |
| Package | TO-220F |
| Model Number | ASA50R130E |
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Product Specification
| Drain to Source Voltage | - | Current - Continuous Drain(Id) | 29A |
| RDS(on) | 113mΩ | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V | Reverse Transfer Capacitance (Crss@Vds) | 1.31pF@100V |
| Number | 1 N-channel | Pd - Power Dissipation | 76W |
| Input Capacitance(Ciss) | 1.446nF@100V | Gate Charge(Qg) | 32.6nC |
| Description | N-Channel 29A 76W Through Hole TO-220F | Mfr. Part # | ASA50R130E |
| Package | TO-220F | Model Number | ASA50R130E |
The ASA50R130E is a Silicon N-Channel MOS enhancement mode MOSFET designed for efficient power conversion. It features a low drain-source on-resistance of 0.113 (typ.) and is easy to control, making it suitable for single-ended flyback or two-transistor forward topologies. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| ASA50R130E | TO220F | ASA50R130E | 550 | 130 | 32.6 | 70 |
| Parameter | Symbol | Value (Min.) | Value (Typ.) | Value (Max.) | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous drain current | ID | - | - | 29 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | - | 70 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 414 | mJ | Tc=25,VDD=50V,ID=9.1A, L = 10mH, RG=25 |
| Avalanche current, single pulse | IAR | - | - | 9.1 | A | Tc=25,VDD=50V,L=10mH, RG=25 |
| Gate source voltage (static) | VGS | -30 | - | 30 | V | static |
| Power dissipation | Ptot | - | - | 76 | W | TC=25C |
| Storage temperature | Tstg | -55 | - | 150 | C | - |
| Operating junction temperature | Tj | -55 | - | 150 | C | - |
| MOSFET dv/dt ruggedness | dv/dt | - | - | 12.3 | V/ns | Vds=0-400v |
| Reverse diode dv/dt | dv/dt | - | - | 199 | V/ns | Vds=0-400vIF=7.7A |
| Thermal resistance, junction - case | RthJC | - | - | 3.62 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 78 | C/W | device on PCB, minimal footprint |
| Drain-source breakdown voltage | V(BR)DSS | 500 | - | - | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.5 | - | 3.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | - | 1 | uA | VDS=500V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | - | 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 0.113 | 0.130 | VGS=10V, ID=10A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - | 24.2 | - | f=1MHz, open drain | |
| Input capacitance | Ciss | - | 1446 | - | pF | VGS=0V, VDS=100V, f=1MHz |
| Output capacitance | Coss | - | 79 | - | pF | VGS=0V, VDS=100V, f=1MHz |
| Reverse transfer capacitance | Crss | - | 1.31 | - | pF | VGS=0V, VDS=100V, f=1MHz |
| Turn-on delay time | td(on) | - | 20 | - | ns | VDD=400V,VGS=13V,ID=7.7A, RG=3.4 |
| Rise time | tr | - | 13 | - | ns | VDD=400V,VGS=13V,ID=7.7A, RG=3.4 |
| Turn-off delay time | td(off) | - | 144 | - | ns | VDD=400V,VGS=13V,ID=7.7A, RG=3.4 |
| Fall time | tf | - | 25 | - | ns | VDD=400V,VGS=13V,ID=7.7A, RG=3.4 |
| Gate to source charge | Qgs | - | 6.5 | - | nC | VDD=400V, ID=7.7A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - | 11.4 | - | nC | VDD=400V, ID=7.7A, VGS=0 to 10V |
| Gate charge total | Qg | - | 32.9 | - | nC | VDD=400V, ID=7.7A, VGS=0 to 10V |
| Diode forward voltage | VSD | - | 0.7 | - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 205 | - | ns | VR=400V, IF=7.7A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 2.0 | - | uC | VR=400V, IF=7.7A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - | 20.3 | - | A | VR=400V, IF=7.7A, diF/dt=100A/s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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