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Hefei Purple Horn E-Commerce Co., Ltd.

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China N Channel Silicon MOSFET ANHI ASB80R750E TO263 Package for LED Lighting and
China N Channel Silicon MOSFET ANHI ASB80R750E TO263 Package for LED Lighting and

  1. China N Channel Silicon MOSFET ANHI ASB80R750E TO263 Package for LED Lighting and

N Channel Silicon MOSFET ANHI ASB80R750E TO263 Package for LED Lighting and

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Configuration -
Drain to Source Voltage 800V
Current - Continuous Drain(Id) 8.5A
Operating Temperature - -55℃~+150℃
RDS(on) 750mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)) 4.2V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 0.92pF
Number 1 N-channel
Output Capacitance(Coss) 34.4pF
Input Capacitance(Ciss) 850.8pF
Pd - Power Dissipation 150W
Gate Charge(Qg) 18.5nC@10V
Description N-Channel 800V 8.5A 150W Surface Mount TO-263
Mfr. Part # ASB80R750E
Package TO-263
Model Number ASB80R750E

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  1. Product Details
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Product Specification

Configuration - Drain to Source Voltage 800V
Current - Continuous Drain(Id) 8.5A Operating Temperature - -55℃~+150℃
RDS(on) 750mΩ@10V,6A Gate Threshold Voltage (Vgs(th)) 4.2V@250uA
Type N-Channel Reverse Transfer Capacitance (Crss@Vds) 0.92pF
Number 1 N-channel Output Capacitance(Coss) 34.4pF
Input Capacitance(Ciss) 850.8pF Pd - Power Dissipation 150W
Gate Charge(Qg) 18.5nC@10V Description N-Channel 800V 8.5A 150W Surface Mount TO-263
Mfr. Part # ASB80R750E Package TO-263
Model Number ASB80R750E

Product Overview

The ASA80R750E, ASD80R750E, and ASB80R750E are N-Channel Silicon MOSFETs designed for efficient power conversion. These enhancement-mode devices feature low drain-source on-resistance (RDS(ON) = 620m typ.) and easy gate control. They are ideal for applications such as single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting systems.

Product Attributes

  • Type: Silicon N-Channel MOS
  • Mode: Enhancement mode

Technical Specifications

Key Performance Parameters
Part Name Package Marking VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A) Body diode dv/dt (V/ns)
ASA80R750E TO220F ASA80R750E 850 750 18.5 35 50
ASD80R750E TO252 ASD80R750E 850 750 18.5 35 50
ASB80R750E TO263 ASB80R750E 850 750 18.5 35 50
Maximum Ratings (at Tj = 25C, unless otherwise specified)
Parameter Symbol Value Unit Note / Test Condition
Continuous drain current ID 8.5 A TC=25C, Limited by Tj,max, Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse 35 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS 88 mJ Tc=25,VDD=50V, Iav=4.2A, L=10mH, RG=25
Avalanche current, single pulse IAR 4.2 A Tc=25,VDD=50V, L=10mH, RG=25
Gate source voltage (static) VGS -30 to 30 V static
Power dissipation (TO220F) Ptot 43 W TC=25C
Power dissipation (TO252&263) Ptot 150 W TC=25C
Storage temperature Tstg -55 to 150 C -
Operating junction temperature Tj -55 to 150 C -
Soldering Temperature TL 260 C Distance of 1.6mm from case for 10s
Reverse diode dv/dt dv/dt 4 V/ns VDS=0...400V, ISD<=8A, Tj=25C
Thermal Characteristics (TO220F)
Parameter Symbol Value Unit Note/Test Condition
Thermal resistance, junction -case RthJC 3.26 C/W -
Thermal resistance, junction -ambient RthJA 76 C/W Device on PCB, minimal footprint
Thermal Characteristics (TO252&263)
Parameter Symbol Value Unit Note / Test Condition
Thermal resistance, junction - case RthJC 1.1 C/W -
Thermal resistance, junction - ambient RthJA 62 C/W device on PCB, minimal footprint
Electrical Characteristics (at Tj=25C, unless otherwise specified)
Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 800 V VGS=0V, ID=250uA
Gate threshold voltage V(GS)th 2.8 to 4.2 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS 1 uA VDS=800V, VGS=0V, Tj=25C
Gate-source leakage current IGSS 100 nA VGS=30V, VDS=0V
Drain-source on-state resistance RDS(on) 620 to 750 m VGS=10V, ID=6A, Tj=25C
Gate resistance (Intrinsic) RG 25 f=1MHz, open drain
Dynamic Characteristics
Parameter Symbol Value Unit Note / Test Condition
Input capacitance Ciss 850.8 pF VGS=0V, VDS=100V, f=1MHz
Output capacitance Coss 34.4 pF VGS=0V, VDS=100V, f=1MHz
Reverse transfer capacitance Crss 0.92 pF VGS=0V, VDS=100V, f=1MHz
Turn-on delay time td(on) 40.6 ns VDD=400V,VGS=10V,ID=4.1A, RG=50
Rise time tr 34.8 ns VDD=400V,VGS=10V,ID=4.1A, RG=50
Turn-off delay time td(off) 128 ns VDD=400V,VGS=10V,ID=4.1A, RG=50
Fall time tf 31 ns VDD=400V,VGS=10V,ID=4.1A, RG=50
Gate Charge Characteristics
Parameter Symbol Value Unit Note / Test Condition
Gate to source charge Qgs 5.0 nC VDD=400V, ID=4.1A, VGS=0 to 10V
Gate to drain charge Qg d 6.6 nC VDD=400V, ID=4.1A, VGS=0 to 10V
Gate charge total Qg 18.5 nC VDD=400V, ID=4.1A, VGS=0 to 10V
Reverse Diode Characteristics
Parameter Symbol Value Unit Note / Test Condition
Diode forward voltage VSD 0.75 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 266.5 ns VR=400V, IF=4.1A, diF/dt=100A/s
Reverse recovery charge Qrr 2.2 uC VR=400V, IF=4.1A, diF/dt=100A/s
Peak reverse recovery current Irrm 14 A VR=400V, IF=4.1A, diF/dt=100A/s

2410121521_ANHI-ASB80R750E_C18723002.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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