| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 15A |
| RDS(on) | 230mΩ |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.16nF@400V |
| Pd - Power Dissipation | 125W |
| Gate Charge(Qg) | 23.2nC |
| Description | N-Channel 650V 15A 125W Surface Mount DFN8x8 |
| Mfr. Part # | ASM65R265E |
| Package | DFN8x8 |
| Model Number | ASM65R265E |
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Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 15A |
| RDS(on) | 230mΩ | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel | Input Capacitance(Ciss) | 1.16nF@400V |
| Pd - Power Dissipation | 125W | Gate Charge(Qg) | 23.2nC |
| Description | N-Channel 650V 15A 125W Surface Mount DFN8x8 | Mfr. Part # | ASM65R265E |
| Package | DFN8x8 | Model Number | ASM65R265E |
The ASM65R265E is a Silicon N-Channel MOS Power MOSFET designed for single-ended flyback or two-transistor forward topologies. It offers a low drain-source on-resistance of 230m (typ.) and is easy to control with a gate switching enhancement mode. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Key Performance Parameters | ||||
| Drain-Source Breakdown Voltage | VDS @ Tj,max | 700 | V | |
| Drain-Source On-Resistance (max) | RDS(on),max | 265 | m | |
| Gate Charge (typ) | Qg,typ | 23.2 | nC | |
| Pulsed Drain Current | ID,pulse | 58 | A | TC=25C |
| Maximum Ratings | ||||
| Continuous drain current | ID | - | 15 A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | 58 A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | 198 mJ | Tc=25,VDD=50V, Id=6.3A, L=10mH, RG=25 |
| Avalanche current, single pulse | IAR | - | 6.3 A | Tc=25,VDD=50V, L=10mH, RG=25 |
| Gate source voltage (static) | VGS | -30 | 30 V | static |
| Power dissipation | Ptot | - | 125 W | TC=25C |
| Storage temperature | Tstg | -55 | 150 C | |
| Operating junction temperature | Tj | -55 | 150 C | |
| Thermal Characteristics | ||||
| Thermal resistance, junction - case | RthJC | - | 0.71 C/W | |
| Thermal resistance, junction - ambient | RthJA | - | 62 C/W | device on PCB, minimal footprint |
| Static Characteristics | ||||
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.8 | 4.2 V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | 1 uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | 100 nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 230 265 m | VGS=10V, ID=5.5A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - | 32 | f=1MHz, open drain |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | - | 1160 pF | VGS=0V, VDS=400V, f=250kHz |
| Output capacitance | Coss | - | 29.1 pF | VGS=0V, VDS=400V, f=250kHz |
| Reverse transfer capacitance | Crss | - | 0.8 pF | VGS=0V, VDS=400V, f=250kHz |
| Turn-on delay time | td(on) | - | 21.8 ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Rise time | tr | - | 23.4 ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Turn-off delay time | td(off) | - | 122.8 ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Fall time | tf | - | 21.4 ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Gate Charge Characteristics | ||||
| Gate to source charge | Qgs | - | 5.4 nC | VDD=400V, ID=5.2A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - | 8.1 nC | VDD=400V, ID=5.2A, VGS=0 to 10V |
| Gate charge total | Qg | - | 23.2 nC | VDD=400V, ID=5.2A, VGS=0 to 10V |
| Reverse Diode Characteristics | ||||
| Diode forward voltage | VSD | - | 0.74 V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 210.5 ns | VR=400V, IF=5.2A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 1.7 uC | VR=400V, IF=5.2A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - | 18 A | VR=400V, IF=5.2A, diF/dt=100A/s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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