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Hefei Purple Horn E-Commerce Co., Ltd.

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China Power MOSFET ANHI ASM65R265E Silicon N Channel Type for PC Power Supplies and
China Power MOSFET ANHI ASM65R265E Silicon N Channel Type for PC Power Supplies and

  1. China Power MOSFET ANHI ASM65R265E Silicon N Channel Type for PC Power Supplies and

Power MOSFET ANHI ASM65R265E Silicon N Channel Type for PC Power Supplies and

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Drain to Source Voltage 650V
Current - Continuous Drain(Id) 15A
RDS(on) 230mΩ
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 3.5V
Reverse Transfer Capacitance (Crss@Vds) -
Number 1 N-channel
Input Capacitance(Ciss) 1.16nF@400V
Pd - Power Dissipation 125W
Gate Charge(Qg) 23.2nC
Description N-Channel 650V 15A 125W Surface Mount DFN8x8
Mfr. Part # ASM65R265E
Package DFN8x8
Model Number ASM65R265E

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  1. Product Details
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Product Specification

Drain to Source Voltage 650V Current - Continuous Drain(Id) 15A
RDS(on) 230mΩ Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 3.5V Reverse Transfer Capacitance (Crss@Vds) -
Number 1 N-channel Input Capacitance(Ciss) 1.16nF@400V
Pd - Power Dissipation 125W Gate Charge(Qg) 23.2nC
Description N-Channel 650V 15A 125W Surface Mount DFN8x8 Mfr. Part # ASM65R265E
Package DFN8x8 Model Number ASM65R265E

Product Overview

The ASM65R265E is a Silicon N-Channel MOS Power MOSFET designed for single-ended flyback or two-transistor forward topologies. It offers a low drain-source on-resistance of 230m (typ.) and is easy to control with a gate switching enhancement mode. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.

Product Attributes

  • Brand: ASM
  • Type: Silicon N-Channel MOS
  • Mode: Enhancement mode

Technical Specifications

Parameter Symbol Value Unit Note / Test Condition
Key Performance Parameters
Drain-Source Breakdown Voltage VDS @ Tj,max 700 V
Drain-Source On-Resistance (max) RDS(on),max 265 m
Gate Charge (typ) Qg,typ 23.2 nC
Pulsed Drain Current ID,pulse 58 A TC=25C
Maximum Ratings
Continuous drain current ID - 15 A TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse - 58 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS - 198 mJ Tc=25,VDD=50V, Id=6.3A, L=10mH, RG=25
Avalanche current, single pulse IAR - 6.3 A Tc=25,VDD=50V, L=10mH, RG=25
Gate source voltage (static) VGS -30 30 V static
Power dissipation Ptot - 125 W TC=25C
Storage temperature Tstg -55 150 C
Operating junction temperature Tj -55 150 C
Thermal Characteristics
Thermal resistance, junction - case RthJC - 0.71 C/W
Thermal resistance, junction - ambient RthJA - 62 C/W device on PCB, minimal footprint
Static Characteristics
Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V, ID=250uA
Gate threshold voltage V(GS)th 2.8 4.2 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 1 uA VDS=650V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - 100 nA VGS=30V, VDS=0V
Drain-source on-state resistance RDS(on) - 230 265 m VGS=10V, ID=5.5A, Tj=25C
Gate resistance (Intrinsic) RG - 32 f=1MHz, open drain
Dynamic Characteristics
Input capacitance Ciss - 1160 pF VGS=0V, VDS=400V, f=250kHz
Output capacitance Coss - 29.1 pF VGS=0V, VDS=400V, f=250kHz
Reverse transfer capacitance Crss - 0.8 pF VGS=0V, VDS=400V, f=250kHz
Turn-on delay time td(on) - 21.8 ns VDD=400V,VGS=13V,ID=5.2A, RG=10.2
Rise time tr - 23.4 ns VDD=400V,VGS=13V,ID=5.2A, RG=10.2
Turn-off delay time td(off) - 122.8 ns VDD=400V,VGS=13V,ID=5.2A, RG=10.2
Fall time tf - 21.4 ns VDD=400V,VGS=13V,ID=5.2A, RG=10.2
Gate Charge Characteristics
Gate to source charge Qgs - 5.4 nC VDD=400V, ID=5.2A, VGS=0 to 10V
Gate to drain charge Qgd - 8.1 nC VDD=400V, ID=5.2A, VGS=0 to 10V
Gate charge total Qg - 23.2 nC VDD=400V, ID=5.2A, VGS=0 to 10V
Reverse Diode Characteristics
Diode forward voltage VSD - 0.74 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr - 210.5 ns VR=400V, IF=5.2A, diF/dt=100A/s
Reverse recovery charge Qrr - 1.7 uC VR=400V, IF=5.2A, diF/dt=100A/s
Peak reverse recovery current Irrm - 18 A VR=400V, IF=5.2A, diF/dt=100A/s

2410121516_ANHI-ASM65R265E_C5440041.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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