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Hefei Purple Horn E-Commerce Co., Ltd.

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China 30V N CHANNEL MOSFET ASDsemi ASDM3080KQ-R featuring low gate charge and 80A
China 30V N CHANNEL MOSFET ASDsemi ASDM3080KQ-R featuring low gate charge and 80A

  1. China 30V N CHANNEL MOSFET ASDsemi ASDM3080KQ-R featuring low gate charge and 80A

30V N CHANNEL MOSFET ASDsemi ASDM3080KQ-R featuring low gate charge and 80A

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Drain to Source Voltage 30V
Current - Continuous Drain(Id) 80A
Operating Temperature - -55℃~+175℃
RDS(on) 6mΩ@10V
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 178pF
Number -
Input Capacitance(Ciss) 1.56nF@25V
Pd - Power Dissipation 75W
Gate Charge(Qg) 11.1nC@4.5V
Description N-Channel 30V 80A 75W Surface Mount TO-252
Mfr. Part # ASDM3080KQ-R
Package TO-252
Model Number ASDM3080KQ-R

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  1. Product Details
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Product Specification

Drain to Source Voltage 30V Current - Continuous Drain(Id) 80A
Operating Temperature - -55℃~+175℃ RDS(on) 6mΩ@10V
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 178pF Number -
Input Capacitance(Ciss) 1.56nF@25V Pd - Power Dissipation 75W
Gate Charge(Qg) 11.1nC@4.5V Description N-Channel 30V 80A 75W Surface Mount TO-252
Mfr. Part # ASDM3080KQ-R Package TO-252
Model Number ASDM3080KQ-R

Product Overview

The Ascend Semiconductor ASDM3080KQ is a 30V N-CHANNEL MOSFET designed for efficient load switching and PWM applications. It features advanced trench technology, providing excellent RDS(ON) and low gate charge. This MOSFET offers robust performance with a continuous drain current of 80A at 25 and 50A at 100, making it suitable for demanding industrial uses.

Product Attributes

  • Brand: Ascend Semiconductor
  • Model: ASDM3080KQ
  • Technology: Advanced Trench Technology
  • Channel Type: N-CHANNEL
  • Package: TO-252

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Units
Absolute Maximum Ratings (TC=25 unless otherwise specified)
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage 20 V
ID Continuous Drain Current TC = 25 80 A
TC = 100 50 A
IDM Pulsed Drain Current note1 300 A
EAS Single Pulsed Avalanche Energy note2 88 mJ
PD Power Dissipation TC = 25 75 W
RJC Thermal Resistance, Junction to Case 2 /W
RJA Thermal Resistance, Junction to Ambient 65 /W
TJ, TSTG Operating and Storage Temperature Range -55 +175
Electrical Characteristics (TC=25 unless otherwise specified)
Off Characteristic
V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS =30V, VGS = 0V, TJ=25 - - 1 uA
VDS =24V, VGS = 0V, TJ=125 - - 10 uA
IGSS Gate to Body Leakage Current VDS =0V,VGS = 20V - - 100 nA
On Characteristic
VGS(th) Gate Threshold Voltage VDS= VGS, ID=250A 1.0 1.5 2.5 V
RDS(on) Static Drain-Source on-Resistance VGS =10V, ID =30A, note3 - 4.8 6 m
VGS =4.5V, ID =20A, note3 - 7.5 12 m
gFS Forward Transconductance VDS =5V, ID =10A - 20 - S
Dynamic Characteristic
Ciss Input Capacitance VDS =25V, VGS =0V, f = 1.0MHz - 1560 - pF
Coss Output Capacitance - 220 - pF
Crss Reverse Transfer Capacitance - 178 - pF
Qg Total Gate Charge VDS =15V, ID =20A, VGS =4.5V - 11.1 - nC
Qgs Gate-Source Charge - 1.85 - nC
Qgd Gate-Drain(Miller) Charge - 6.8 - nC
Switching Characteristics
td(on) Turn-on Delay Time VDS=15V, ID=15A, RG=3.3, VGS =10V - 7.5 - ns
tr Turn-on Rise Time - 14.5 - ns
td(off) Turn-off Delay Time - 35.2 - ns
tf Turn-off Fall Time - 9.6 - ns
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain to Source Diode Forward Current - - 75 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 300 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, IS=30A - - 1.2 V
trr Body Diode Reverse Recovery Time IS=30A,dI/dt=100A/s - 32 - ns
Qrr Body Diode Reverse Recovery Charge - 12 - nC
Ordering and Marking Information
Device No. ASDM3080KQ-R
Marking 3080
Package TO-252
Packing Tape/ Reel
Quantity 2500

Package Mechanical Data

Ref Dimensions (Millimeters) Dimensions (Inches)
Min. Typ. Max. Min. Typ. Max.
A 2.10 0.083
A2 0 0.026 0 0.001
B 0.40 0.098 0.016 0.004
C 0.10 0.034 0.004 0.001
D 6.40 9.50 10.70 0.252 0.374 0.421
E 5.90 6.30 0.232 0.248
G 0.083 0.065 0.003 0.003
H 0.026 0.016 0.048 0.001 0.001 0.002
L 6.40 9.50 10.70 0.252 0.374 0.421
V1 0.374 0.421 0.015 0.017
V2 0.053 0.065 0.002 0.003
L2 0 7 0 7
B2 5.18 5.48 0.204 0.216
C2 0.44 0.58 0.017 0.023
D1 4.63 0.182
E1 5.30 (REF) 0.209 (REF)

Reel Specification - TO-252

Ref Dimensions (Millimeters) Dimensions (Inches)
Min. Typ. Max. Min. Typ. Max.
W 15.90 16.10 0.626 0.634
E 1.65 1.85 0.065 0.073
F 7.40 7.60 0.291 0.299
D0 1.40 1.60 0.055 0.063
D1 1.40 1.60 0.055 0.063
P0 7.90 8.10 0.311 0.319
P1 10.45 10.50 10.60 0.411 0.413 0.417
P2 1.75 0.069
A0 2.78 0.109
B0 6.85 7.00 0.270 0.276
K0 2.68 2.88 0.105 0.113
T 10.00 0.394
t1 0.10 0.24 0.004 0.009
Reel Diameter 329 (13 inch)
Reel Quantity 2,500 PCS
Carton Quantity 25,000 PCS

2410121713_ASDsemi-ASDM3080KQ-R_C2758230.pdf

Company Details

Bronze Gleitlager

,

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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