| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 28mΩ@10V,7A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| Number | 1 N-Channel + 1 P-Channel |
| Output Capacitance(Coss) | 120pF |
| Input Capacitance(Ciss) | 980pF |
| Pd - Power Dissipation | 2W |
| Gate Charge(Qg) | 14nC@10V |
| Description | N-Channel+P-Channel Array 40V 7A 2W Surface Mount SOP-8 |
| Mfr. Part # | ASDM4614S-R |
| Package | SOP-8 |
| Model Number | ASDM4614S-R |
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Product Specification
| Drain to Source Voltage | 40V | Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 28mΩ@10V,7A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA | Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF | Number | 1 N-Channel + 1 P-Channel |
| Output Capacitance(Coss) | 120pF | Input Capacitance(Ciss) | 980pF |
| Pd - Power Dissipation | 2W | Gate Charge(Qg) | 14nC@10V |
| Description | N-Channel+P-Channel Array 40V 7A 2W Surface Mount SOP-8 | Mfr. Part # | ASDM4614S-R |
| Package | SOP-8 | Model Number | ASDM4614S-R |
The ASDM4614S is a 40V N-Channel and P-Channel MOSFET designed for high power and current handling capabilities. It is a lead-free product suitable for surface mount applications, including PWM applications, load switching, and power management. This MOSFET offers robust performance with features like high current handling and efficient switching characteristics.
| Parameter | Symbol | Condition | N-Channel Typ | P-Channel Typ | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | |||||
| Drain-Source Voltage | VDS | 40 | -40 | V | |
| Gate-Source Voltage | VGS | 20 | 20 | V | |
| Continuous Drain Current | ID | 7 | -6 | A | |
| Pulsed Drain Current (Note 1) | IDM | 20 | -20 | A | |
| Maximum Power Dissipation | PD | 2 | 2 | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | -55 To 150 | ||
| N-Channel Electrical Characteristics (TA=25 unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 40 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=32V,VGS=0V | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 To 2.5 | - | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=5A | 28 To 35 | - | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=4A | 36 To 45 | - | m |
| Forward Transconductance | gFS | VDS=5V,ID=5A | 15 | - | S |
| Input Capacitance | Clss | 620 | - | PF | |
| Output Capacitance | Coss | 110 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V, F=1.0MHz | 70 | - | PF |
| Turn-on Delay Time | td(on) | 4.5 | - | nS | |
| Turn-on Rise Time | tr | 2.5 | - | nS | |
| Turn-Off Delay Time | td(off) | 14.5 | - | nS | |
| Turn-Off Fall Time | tf | VDD=15V, RL=3, VGS=10V,RGEN=3 | 3.5 | - | nS |
| Total Gate Charge | Qg | 5.2 | - | nC | |
| Gate-Source Charge | Qgs | 0.85 | - | nC | |
| Gate-Drain Charge | Qg | VDS=15V,ID=5A, VGS=10V | 1.3 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=3A | - | 1.3 | V |
| Diode Forward Current | IS | (Note 2) | - | 4 | A |
| P-Channel Electrical Characteristics (TA=25 unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | - | -40 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-32V , VGS=0V | - | -1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | - | -1 To -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-6A | - | 38 To 46 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-3A | - | 70 | m |
| Forward Transconductance | gFS | VDS=-5V,ID=-4.1A | - | 10 | S |
| Input Capacitance | Clss | - | 980 | PF | |
| Output Capacitance | Coss | - | 120 | PF | |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V, F=1.0MHz | - | 95 | PF |
| Turn-on Delay Time | td(on) | - | 9 | nS | |
| Turn-on Rise Time | tr | - | 5 | nS | |
| Turn-Off Delay Time | td(off) | - | 28 | nS | |
| Turn-Off Fall Time | tf | VDD=-15V,RL=3.6, VGS=-10V,RGEN=3 | - | 13.5 | nS |
| Total Gate Charge | Qg | - | 14 | nC | |
| Gate-Source Charge | Qgs | - | 3.1 | nC | |
| Gate-Drain Charge | Qg | VDS=-15V,ID=-4A,VGS=-10V | - | 3 | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=-1A | - | -1.3 | V |
| Device No. | Marking | Package | Packing | Quantity |
|---|---|---|---|---|
| ASDM4614S-R | 4614 Lot Number | SOP-8 | Tape&Reel | 4000/Reel |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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