Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 41mΩ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 12.1pF@50V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.356nF@50V |
| Pd - Power Dissipation | 500W |
| Gate Charge(Qg) | 290.6nC |
| Description | N-Channel 700V 80A 500W Through Hole TO-247 |
| Mfr. Part # | ASW65R041EFDA |
| Package | TO-247 |
| Model Number | ASW65R041EFDA |
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Product Specification
| Drain to Source Voltage | 700V | Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 41mΩ |
| Gate Threshold Voltage (Vgs(th)) | 3V | Reverse Transfer Capacitance (Crss@Vds) | 12.1pF@50V |
| Number | 1 N-channel | Input Capacitance(Ciss) | 7.356nF@50V |
| Pd - Power Dissipation | 500W | Gate Charge(Qg) | 290.6nC |
| Description | N-Channel 700V 80A 500W Through Hole TO-247 | Mfr. Part # | ASW65R041EFDA |
| Package | TO-247 | Model Number | ASW65R041EFDA |
The ASW65R041EFDA is a Silicon N-Channel MOSFET designed for soft switching boost PFC and full bridge topologies. It is ideal for applications such as phase-shift-bridge (ZVS), LLC half bridge, AHB, and LLC half bridge, commonly found in Telecom Power, EV Charging, Solar applications, and Server Power. This MOSFET features low drain-source on-resistance (RDS(on) = 0.035 typ.), easy gate control, and operates in enhancement mode with a threshold voltage (Vth) of 3 to 5 V. Its robust design and high performance make it suitable for demanding power electronics applications.
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Part Name | - | ASW65R041EFDA | - | - |
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 3 - 5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 5 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.035 - 0.041 | VGS=10V, ID=28A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | - 13 | f=1MHz, open drain | |
| Continuous drain current | ID | - 80 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 240 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 16000 | mJ | Tc=25,VDD=50V,L = 20mH, RG=25 |
| Avalanche current, single pulse | IAR | - 10 | A | Tc=25,VDD=50V,L = 20mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - 26 | V/ns | VDS=0...150V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | - 500 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Reverse diode dv/dt | dv/dt | - 50 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal resistance, junction - case | RthJC | - 0.205 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - 62 | C/W | device on PCB, minimal footprint |
| Input capacitance | Ciss | - 7356 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 436 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 12.1 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 63.7 | ns | VDD=400V,VGS=13V,ID=49.6A RG=1.7 |
| Rise time | tr | - 28.4 | ns | VDD=400V,VGS=13V,ID=49.6A RG=1.7 |
| Turn-off delay time | td(off) | - 270 | ns | VDD=400V,VGS=13V,ID=49.6A RG=1.7 |
| Fall time | tf | - 24.1 | ns | VDD=400V,VGS=13V,ID=49.6A RG=1.7 |
| Gate to source charge | Qgs | - 46.1 | nC | VDD =480V, ID =49.6A, VGS =10V |
| Gate to drain charge | Qgd | - 151.3 | nC | VDD =480V, ID =49.6A, VGS =10V |
| Gate charge total | Qg | - 290.6 | nC | VDD =480V, ID =49.6A, VGS =10V |
| Gate plateau voltage | Vplateau | - 7.8 | V | VDD =480V, ID =49.6A, VGS =10V |
| Diode forward voltage | VSD | - 0.61 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - 193.5 | ns | Vr=400v,IF=49.6A,di/dt=100A/us |
| Reverse recovery charge | Qrr | - 1.67 | uC | Vr=400v,IF=49.6A,di/dt=100A/us |
| Peak reverse recovery current | Irrm | - 14.5 | A | Vr=400v,IF=49.6A,di/dt=100A/us |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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