Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 20A |
| RDS(on) | 210mΩ |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 5.28pF@50V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.547nF@50V |
| Pd - Power Dissipation | 33W |
| Gate Charge(Qg) | 32.23nC |
| Description | N-Channel 650V 20A 33W Through Hole TO-220F |
| Mfr. Part # | ASA60R210E |
| Package | TO-220F |
| Model Number | ASA60R210E |
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Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 20A |
| RDS(on) | 210mΩ | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | Reverse Transfer Capacitance (Crss@Vds) | 5.28pF@50V |
| Number | 1 N-channel | Input Capacitance(Ciss) | 1.547nF@50V |
| Pd - Power Dissipation | 33W | Gate Charge(Qg) | 32.23nC |
| Description | N-Channel 650V 20A 33W Through Hole TO-220F | Mfr. Part # | ASA60R210E |
| Package | TO-220F | Model Number | ASA60R210E |
The ASA60R210E is a Silicon N-Channel MOS MOSFET designed for high-efficiency power switching applications. It features a low drain-source on-resistance of 0.18 (typ.) and is easy to control due to its enhancement mode operation. This MOSFET is suitable for various power supply topologies including Boost PFC, single-ended flyback, two-transistor forward, half bridge, asymmetric half bridge, and series resonance half bridge. Its applications span across PC power supplies, adaptors, LCD & PDP TVs, LED lighting, server power, telecom power, and UPS systems.
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 605 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 100 | nA | VDS=600V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.18 - 0.21 | VGS=10V, ID=7.5A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | 5.6 | f=1MHz, open drain | |
| Input capacitance | Ciss | 1547 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | 134 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | 5.28 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | 12.4 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Rise time | tr | 21.6 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Turn-off delay time | td(off) | 52 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Fall time | tf | 18.8 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Gate to source charge | Qgs | 8.242 | nC | VDD=400V, ID=8A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 10.85 | nC | VDD=400V, ID=8A, VGS=0 to 10V |
| Gate charge total | Qg | 32.23 | nC | VDD=400V, ID=8A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | 5.7 | V | VDD=400V, ID=8A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.72 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 275 | ns | VR=400V, IF=8 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 3.809 | uC | VR=400V, IF=8 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 25.6 | A | VR=400V, IF=8 A, diF/dt=100A/s |
| Continuous drain current | ID | - 20 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 60 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 898 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | - 135 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | - 33 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | |
| Operating junction temperature | Tj | -55 - 150 | C | |
| Reverse diode dv/dt | dv/dt | - 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal resistance, junction - case | RthJC | - 3.8 | C/W | |
| Thermal resistance, junction - ambient | RthJA | - 80 | C/W | device on PCB, minimal footprint |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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