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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China High Speed Switching N Channel MOSFET Model AUB033N08BG Suitable for Telecom and
China High Speed Switching N Channel MOSFET Model AUB033N08BG Suitable for Telecom and

  1. China High Speed Switching N Channel MOSFET Model AUB033N08BG Suitable for Telecom and

High Speed Switching N Channel MOSFET Model AUB033N08BG Suitable for Telecom and

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Drain to Source Voltage 85V
Current - Continuous Drain(Id) 160A
Operating Temperature - -55℃~+175℃
RDS(on) 3.3mΩ
Gate Threshold Voltage (Vgs(th)) 3V
Reverse Transfer Capacitance (Crss@Vds) 43.4pF
Pd - Power Dissipation 179W
Input Capacitance(Ciss) 7.463nF
Gate Charge(Qg) 109nC
Description 85V 160A 179W Surface Mount TO-263
Mfr. Part # AUB033N08BG
Package TO-263
Model Number AUB033N08BG

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Product Specification

Drain to Source Voltage 85V Current - Continuous Drain(Id) 160A
Operating Temperature - -55℃~+175℃ RDS(on) 3.3mΩ
Gate Threshold Voltage (Vgs(th)) 3V Reverse Transfer Capacitance (Crss@Vds) 43.4pF
Pd - Power Dissipation 179W Input Capacitance(Ciss) 7.463nF
Gate Charge(Qg) 109nC Description 85V 160A 179W Surface Mount TO-263
Mfr. Part # AUB033N08BG Package TO-263
Model Number AUB033N08BG

Product Overview

The AUB033N08BG series are N-Channel MOSFETs designed for high-speed switching applications. These devices feature low drain-source on-resistance, high switching speed, enhanced body diode, and rugged avalanche ruggedness. They are ideal for synchronous rectification in DC/DC converters, hard switching and high-speed circuits, and applications in telecom and industrial sectors. Available in TO-263, TO-220, and TO-247 packages.

Product Attributes

  • Brand: AUB
  • Channel Type: N-Channel
  • Technology: MOSFET
  • Packaging Options: TO-263, TO-220, TO-247

Technical Specifications

Model Part Name Package Marking VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A)
AUB033N08BG AUB033N08 TO263 AUB033N08BG 85 3.3 109 640
AUP033N08BG AUP033N08 TO220 AUP033N08BG 85 3.3 109 640
AUW033N08BG AUW033N08 TO247 AUW033N08BG 85 3.3 109 640
Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 85 V VGS=0V, ID=10mA
Gate threshold voltage V(GS)th 2.5 - 3.5 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 1000 nA VDS=80V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - 100 nA VGS=20V, VDS=0V
Drain-source on-state resistance RDS(on) 2.9 - 3.3 m VGS=10V, ID=20A, Tj=25C
Gate resistance (Intrinsic) RG 0.7 f=1MHz, open drain
Input capacitance Ciss 7463 pF Vds=40V,Vgs=0V, f=1MHz
Output capacitance Coss 1292 pF Vds=40V,Vgs=0V, f=1MHz
Reverse transfer capacitance Crss 43.4 pF Vds=40V,Vgs=0V, f=1MHz
Turn-on delay time td(on) 24 ns VDD=40V,VGS=10V,RG=10, ID=20A
Rise time tr 53 ns VDD=40V,VGS=10V,RG=10, ID=20A
Turn-off delay time td(off) 107 ns VDD=40V,VGS=10V,RG=10, ID=20A
Fall time tf 66 ns VDD=40V,VGS=10V,RG=10, ID=20A
Gate to source charge Qgs 27.5 nC VDS=40V,VGS=0 to 10V, ID=20A
Gate to drain charge Qgd 26.4 nC VDS=40V,VGS=0 to 10V, ID=20A
Gate charge total Qg 109 nC VDS=40V,VGS=0 to 10V, ID=20A
Diode forward voltage VSD 0.67 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 52 ns VR=40V,IF=20A, diF/dt=200A/us
Reverse recovery charge Qrr 137 uC VR=40V,IF=20A,diF/dt=200A/us
Peak reverse recovery current Irrm -3.7 A VR=40V,IF=20A,diF/dt=200A/us
Parameter Symbol Value Unit Note / Test Condition
Continuous drain current ID 160 (TC=25C), 115 (TC=100C) A Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse 640 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS 884 mJ
Gate source voltage (static) VGS -20 - 20 V static
Power dissipation (TO220) Ptot 370 W TC=25C
Power dissipation (TO263) Ptot 179 W TC=25C
Power dissipation (TO247) Ptot 340 W TC=25C
Storage temperature Tstg -55 - 175 C
Operating junction temperature Tj -55 - 175 C
Package Parameter Value Unit Note / Test Condition
TO220 Thermal resistance, junction - case 0.42 C/W
Thermal resistance, junction - ambient 62 C/W device on PCB, minimal footprint
TO263 Thermal resistance, junction - case 0.7 C/W
Thermal resistance, junction - ambient 62 C/W device on PCB, minimal footprint
TO247 Thermal resistance, junction - case 0.44 C/W
Thermal resistance, junction - ambient 40 C/W device on PCB, minimal footprint

2410121538_ANHI-AUB033N08BG_C5440029.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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