| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 7.5mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| Number | - |
| Input Capacitance(Ciss) | 1.8nF@20V |
| Pd - Power Dissipation | 65W |
| Gate Charge(Qg) | 29nC@10V |
| Description | 40V 60A 65W Surface Mount TO-252-3 |
| Mfr. Part # | ASDM40N60KQ-R |
| Package | TO-252-3 |
| Model Number | ASDM40N60KQ-R |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 40V | Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 7.5mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA | Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| Number | - | Input Capacitance(Ciss) | 1.8nF@20V |
| Pd - Power Dissipation | 65W | Gate Charge(Qg) | 29nC@10V |
| Description | 40V 60A 65W Surface Mount TO-252-3 | Mfr. Part # | ASDM40N60KQ-R |
| Package | TO-252-3 | Model Number | ASDM40N60KQ-R |
The Ascend Semiconductor ASDM40N60KQ is a 40V N-Channel MOSFET designed with a high-density cell structure for ultra-low RDS(on). It features fully characterized avalanche voltage and current, ensuring good stability and uniformity with high EAS. The MOSFET offers excellent thermal dissipation properties and special process technology for high ESD capability. It is suitable for load switching, hard switched and high frequency circuits, and uninterruptible power supply applications.
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | - | 40 | V |
| Gate-Source Voltage | VGS | - | - | - | ±20 | V |
| Drain Current-Continuous | ID | - | - | - | 60 | A |
| Drain Current-Continuous (TC=100) | ID (100) | - | - | - | 42 | A |
| Pulsed Drain Current | IDM | - | - | - | 240 | A |
| Maximum Power Dissipation | PD | - | - | - | 65 | W |
| Derating factor | - | - | - | - | 0.43 | W/ |
| Single pulse avalanche energy (Note 5) | EAS | TJ=25, VDD=20V, VG=10V, L=1mH, Rg=25 | - | - | 400 | mJ |
| Operating Junction and Storage Temperature Range | TJ, TSTG | - | -55 | - | 175 | |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 40 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250µA | 1.2 | 1.6 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A | - | 5.8 | 7.5 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 7.5 | 9.5 | mΩ |
| Forward Transconductance | gFS | VDS=10V, ID=20A | 15 | - | - | S |
| Input Capacitance | Ciss | - | - | 1800 | - | pF |
| Output Capacitance | Coss | - | - | 280 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=20V, VGS=0V, F=1.0MHz | - | 190 | - | pF |
| Turn-on Delay Time | td(on) | VDD=20V, ID=2A, RL=1Ω, VGS=10V, RG=3Ω | - | 6.4 | - | nS |
| Turn-on Rise Time | tr | VDD=20V, ID=2A, RL=1Ω, VGS=10V, RG=3Ω | - | 17.2 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=20V, ID=2A, RL=1Ω, VGS=10V, RG=3Ω | - | 29.6 | - | nS |
| Turn-Off Fall Time | tf | VDD=20V, ID=2A, RL=1Ω, VGS=10V, RG=3Ω | - | 16.8 | - | nS |
| Total Gate Charge | Qg | VDS=20V, ID=20A, VGS=10V | - | 29 | - | nC |
| Gate-Source Charge | Qgs | VDS=20V, ID=20A, VGS=10V | - | 4.5 | - | nC |
| Gate-Drain Charge | Qgd | VDS=20V, ID=20A, VGS=10V | - | 6.4 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V, IS=10A | - | 1.2 | - | V |
| Diode Forward Current | IS | - | - | - | 60 | A |
| Reverse Recovery Time | trr | TJ = 25°C, IF = 20A, di/dt = 100A/µs (Note 3) | - | 29 | - | nS |
| Reverse Recovery Charge | Qrr | TJ = 25°C, IF = 20A, di/dt = 100A/µs (Note 3) | - | 26 | - | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!