Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 280mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4.2V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.21pF@50V |
| Input Capacitance(Ciss) | 953.8pF@50V |
| Pd - Power Dissipation | 126W |
| Gate Charge(Qg) | 19.4nC@0to10V |
| Description | N-Channel 650V 15A 126W Surface Mount DFN-8(8x8) |
| Mfr. Part # | ASM65R280E |
| Package | DFN-8(8x8) |
| Model Number | ASM65R280E |
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Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 280mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4.2V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.21pF@50V | Input Capacitance(Ciss) | 953.8pF@50V |
| Pd - Power Dissipation | 126W | Gate Charge(Qg) | 19.4nC@0to10V |
| Description | N-Channel 650V 15A 126W Surface Mount DFN-8(8x8) | Mfr. Part # | ASM65R280E |
| Package | DFN-8(8x8) | Model Number | ASM65R280E |
The ASA65R280E, ASD65R280E, and ASM65R280E are N-Channel Silicon MOSFETs designed for high-efficiency power applications. These enhancement-mode MOSFETs feature low drain-source on-resistance (RDS(ON) = 240m typ.) and easy gate switching control. They are ideal for single-ended flyback or two-transistor forward topologies in applications such as PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | Body diode dv/dt (V/ns) |
|---|---|---|---|---|---|---|---|
| ASA65R280E | TO220F | ASA65R280E | 700 | 280 | 19.4 | 45 | 50 |
| ASD65R280E | TO252 | ASD65R280E | 700 | 280 | 19.4 | 45 | 50 |
| ASM65R280E | DFN8X8 | ASM65R280E | 700 | 280 | 19.4 | 45 | 50 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Continuous drain current | ID | 15 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | 45 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 120 | mJ | Tc=25,VDD=50V, Iav=4.9A, L=10mH, RG=25 |
| Avalanche current, single pulse | IAR | 4.9 | A | Tc=25,VDD=50V, L=10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 to 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 to 30 | V | AC (f>1 Hz) |
| Power dissipation (TO220F) | Ptot | 33 | W | TC=25C |
| Power dissipation (TO252&DFN8X8) | Ptot | 126 | W | TC=25C |
| Storage temperature | Tstg | -55 to 150 | C | |
| Operating junction temperature | Tj | -55 to 150 | C | |
| Soldering Temperature | TL | 260 | C | Distance of 1.6mm from case for 10s |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0...400V, ISD<=58A, Tj=25C |
| Thermal resistance, junction - case (TO220F) | RthJC | 3.8 | C/W | |
| Thermal resistance, junction - ambient (TO220F) | RthJA | 80 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO252&DFN8X8) | RthJC | 0.99 | C/W | |
| Thermal resistance, junction - ambient (TO252&DFN8X8) | RthJA | 62 | C/W | device on PCB, minimal footprint |
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.8 to 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 240 to 280 | m | VGS=10V, ID=5.5A, Tj=25C |
| Gate resistance (Intrinsic) | RG | 4.0 | f=1MHz, open drain | |
| Input capacitance | Ciss | 953.8 | pF | VGS=0V, VDS=50V, f=1MHz |
| Output capacitance | Coss | 40.67 | pF | VGS=0V, VDS=50V, f=1MHz |
| Reverse transfer capacitance | Crss | 1.21 | pF | VGS=0V, VDS=50, f=1MHz |
| Turn-on delay time | td(on) | 7.7 | ns | VDD=400V,VGS=10V,ID=8A, RG=2 |
| Rise time | tr | 7.5 | ns | VDD=400V,VGS=10V,ID=8A, RG=2 |
| Turn-off delay time | td(off) | 24.44 | ns | VDD=400V,VGS=10V,ID=8A, RG=2 |
| Fall time | tf | 8.4 | ns | VDD=400V,VGS=10V,ID=8A, RG=2 |
| Gate to source charge | Qgs | 4.83 | nC | VDD=400V, ID=8A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 7.08 | nC | VDD=400V, ID=8A, VGS=0 to 10V |
| Gate charge total | Qg | 19.4 | nC | VDD=400V, ID=8A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | 5.6 | V | VDD=400V, ID=8A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.73 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 237.7 | ns | VR=400V, IF=8A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 2.604 | uC | VR=400V, IF=8A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 23.32 | A | VR=400V, IF=8A, diF/dt=100A/s |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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