Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 20A |
| RDS(on) | 220mΩ@10V,7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5.28pF |
| Output Capacitance(Coss) | 134pF |
| Input Capacitance(Ciss) | 1.547nF |
| Pd - Power Dissipation | 126W |
| Gate Charge(Qg) | 32.23nC@10V |
| Description | N-Channel 650V 20A 126W Surface Mount TO-263 |
| Mfr. Part # | ASB65R220E |
| Package | TO-263 |
| Model Number | ASB65R220E |
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Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 20A |
| RDS(on) | 220mΩ@10V,7A | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5.28pF | Output Capacitance(Coss) | 134pF |
| Input Capacitance(Ciss) | 1.547nF | Pd - Power Dissipation | 126W |
| Gate Charge(Qg) | 32.23nC@10V | Description | N-Channel 650V 20A 126W Surface Mount TO-263 |
| Mfr. Part # | ASB65R220E | Package | TO-263 |
| Model Number | ASB65R220E |
The ASA65R220E and ASB65R220E are N-channel Silicon MOSFETs designed for high-efficiency power applications. They feature low drain-source on-resistance (RDS(ON) = 0.19 typ.) and easy gate switching control in an enhancement mode. These MOSFETs are ideal for various power supply topologies including Boost PFC, single-ended flyback, two-transistor forward, half bridge, asymmetric half bridge, and series resonance half bridge. They are suitable for applications such as PC power supplies, adapters, LCD & PDP TVs, LED lighting, server power, telecom power, and UPS systems.
| Part Name | Package | Marking | VDS @Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| ASA65R220E | TO220F | ASA65R220E | 700 | 220 | 32.23 | 60 |
| ASB65R220E | TO263 | ASB65R220E | 700 | 220 | 32.23 | 60 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS=0V,ID=250uA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS,ID=250uA |
| Zero gate voltage drain current | IDSS | - 1 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=20V,VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.19 - 0.22 | VGS=10V,ID=7A,Tj=25C | |
| Gate resistance | RG | - 11 | f=1MHz, open drain | |
| Input capacitance | Ciss | - 1547 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 134 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 5.28 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 12.4 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Risetime | tr | - 21.6 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Turn-off delay time | td(off) | - 52 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Fall time | tf | - 18.8 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Gate to source charge | Qgs | - 8.242 | nC | VDD=400V,ID=8A,VGS=0to 10V |
| Gate to drain charge | Qgd | 10.85 | nC | VDD=400V,ID=8A,VGS=0to 10V |
| Gate charge total | Qg | - 32.23 | nC | VDD=400V,ID=8A,VGS=0to 10V |
| Gate plateau voltage | Vplateau | - 5.7 | V | VDD=400V,ID=8A,VGS=0to 10V |
| Diode forward voltage | VSD | - 0.72 | V | VGS=0V,IF=1A,Tj=25C |
| Reverse recovery time | trr | - 275 | ns | VR=400V,IF=8A,diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 3.809 | C | VR=400V,IF=8A,diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 25.6 | A | VR=400V,IF=8A,diF/dt=100A/s |
| Power dissipation (TO220F) | Ptot | - 33 | W | TC=25C |
| Power dissipation (TO263) | Ptot | - 126 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Thermal resistance, junction - case (TO220F) | RthJC | - 3.8 | C/W | - |
| Thermal resistance, junction - ambient (TO220F) | RthJA | - 80 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO263) | RthJC | - 0.99 | C/W | - |
| Thermal resistance, junction - ambient (TO263) | RthJA | - 62 | C/W | device on PCB, minimal footprint |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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